{"title":"偏置温度不稳定性及其与闪烁(1/f)噪声的关系","authors":"Y. Ding, D. Misra, P. Srinivasan","doi":"10.1109/IIRW.2016.7904913","DOIUrl":null,"url":null,"abstract":"Flicker noise is used as a diagnostic tool to analyze the degradation mechanism before and after BTI in thin and thick gate oxide FinFETs. Although nFETs show lower BTI than pFETs for thick gate oxides, comparable BTI degradation is noticed between thin gate oxide nFETs and pFETs. Analyses of noise spectra reveal that: the degradation of oxide occurs closer to metal gate rather than channel during BTI. The distance between the defect location and channel plays an important role in noise mechanism for nMOS. As the defects are closer to the channel and coulombic scattering is enhanced, the noise in nFETs is modified from carrier number fluctuation to mobility fluctuation model.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs\",\"authors\":\"Y. Ding, D. Misra, P. Srinivasan\",\"doi\":\"10.1109/IIRW.2016.7904913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Flicker noise is used as a diagnostic tool to analyze the degradation mechanism before and after BTI in thin and thick gate oxide FinFETs. Although nFETs show lower BTI than pFETs for thick gate oxides, comparable BTI degradation is noticed between thin gate oxide nFETs and pFETs. Analyses of noise spectra reveal that: the degradation of oxide occurs closer to metal gate rather than channel during BTI. The distance between the defect location and channel plays an important role in noise mechanism for nMOS. As the defects are closer to the channel and coulombic scattering is enhanced, the noise in nFETs is modified from carrier number fluctuation to mobility fluctuation model.\",\"PeriodicalId\":436183,\"journal\":{\"name\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2016.7904913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs
Flicker noise is used as a diagnostic tool to analyze the degradation mechanism before and after BTI in thin and thick gate oxide FinFETs. Although nFETs show lower BTI than pFETs for thick gate oxides, comparable BTI degradation is noticed between thin gate oxide nFETs and pFETs. Analyses of noise spectra reveal that: the degradation of oxide occurs closer to metal gate rather than channel during BTI. The distance between the defect location and channel plays an important role in noise mechanism for nMOS. As the defects are closer to the channel and coulombic scattering is enhanced, the noise in nFETs is modified from carrier number fluctuation to mobility fluctuation model.
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