{"title":"Simulation study of cadmium-free CIGS solar cell for efficiency enhancement by minimizing recombination losses through back surface field mechanism","authors":"Alok Kumar , Sushama M. Giripunje , Alok Kumar Patel , Shivani Gohri","doi":"10.1016/j.ssc.2024.115694","DOIUrl":"10.1016/j.ssc.2024.115694","url":null,"abstract":"<div><div>Thin-film photovoltaic cells provide benefits over conventional first-generation technology, including lighter weight, greater flexibility, and lower power generation costs. Chalcogenide solar cells offer good efficiency and technological maturity among thin-film technology. In this work, a solar cell device structure, Al/FTO/SnS<sub>2</sub>/CIGS/CuO/Ni, is examined using SCAPS-1D. Further, by incorporating the back surface field (BSF) layer, the conversion efficiency increased from 18.93 % to 29.88 %, followed by V<sub>OC</sub> of 0.96 V, J<sub>SC</sub> of 37.07 mA cm<sup>−2</sup>, and FF of 83.71 %. This increment in device performance is owing to the lowering back surface recombination velocity and the additional hole tunnelling activity offered by the BSF layer by forming a quasi-ohmic contact, i.e. metal-semiconductor contact with negligible junction resistance relative to the total resistance of the device. Throughout this research work, the authors studied several factors such as surface recombination velocity, temperature impact, front and back contact metal work functions, parasitic resistance impact, gallium proportion, and doping density impact on CIGS solar cells. The work also included a calibration with experimental data from published sources to validate the simulation results.</div><div>This paper presents a new approach for producing high-efficiency, eco-friendly CIGS solar cells with CuO back surface field mechanism.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115694"},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142326485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The stability, electronic and optical properties of nonmetal doped g-GaN: A first-principles calculation","authors":"Aiyu Yang, Wenjing Hu","doi":"10.1016/j.ssc.2024.115695","DOIUrl":"10.1016/j.ssc.2024.115695","url":null,"abstract":"<div><p>Doping is an effective strategy to modulate the electronic performance of materials by forming new chemical bonds and relaxing the neighboring bonds, which may change catalytic performance of materials. Herein, we demonstrate the effects of a series of nonmetal (NM) dopants on the electronic properties and photocatalytic activity of g-GaN monolayer using first-principle calculations. NM dopants prefer to substitute N atom under Ga-rich condition. C, O and F doped specimens are highly stable under both Ga-rich and N-rich conditions. NM dopants induce the generation of impurity levels, contributing to reduce the electronic transition energies. S, Se and Te doped specimens increase by about 11, 8 and 4 times for absorption intensity in the region of visible light, respectively. Remarkably, S, Cl, Se, Br, Te and I dopants can effectively decrease the recombination rate of photogenerated electrons and holes of the g-GaN in photocatalytic reaction. H, B, C Si, P and As doped system can induce more active sites. Remarkably, halogen dopants could increase the both redox and reduction ability of g-GaN monolayer. Thus, NM dopants can effectively tune redox potential of g-GaN monolayer and improve its photocatalytic performance.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115695"},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142228497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nguyen Dung Chinh , Le Tri Dat , Vinh N.T. Pham , T.D. Anh-Tai , Vo Quoc Phong , Nguyen Duy Vy
{"title":"Effect of magnetic field on the Bose–Einstein condensation of quantum well exciton–polaritons","authors":"Nguyen Dung Chinh , Le Tri Dat , Vinh N.T. Pham , T.D. Anh-Tai , Vo Quoc Phong , Nguyen Duy Vy","doi":"10.1016/j.ssc.2024.115690","DOIUrl":"10.1016/j.ssc.2024.115690","url":null,"abstract":"<div><p>We theoretically investigate the nonlinear effects of a magnetic field on the relaxation process of exciton–polaritons toward Bose–Einstein condensation in GaAs quantum wells. Our study reveals that the modification of the exciton’s effective mass, Rabi splitting, and dispersion significantly alters the relaxation rate of polaritons as they approach condensation. By employing a quasi-stationary pump, we clarify the dynamics of the total and condensed polariton populations in response to varying magnetic field strengths. Notably, we demonstrate that under low-energy pumping conditions, the presence of a magnetic field significantly suppresses condensation. This suppression is attributed to the decreased scattering rate between energy levels, which is a consequence of the reduced steepness in the high-energy dispersion. Conversely, increasing both the pump energy and the magnetic field can enhance relaxation efficiency, leading to a substantially larger number of condensed polaritons.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115690"},"PeriodicalIF":2.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142173564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"First-principles study on the stability and optoelectronic properties of the novel C6O2 nanostructure","authors":"Shirin Amirian , Hamidreza Alborznia , Shahram Yalameha","doi":"10.1016/j.ssc.2024.115693","DOIUrl":"10.1016/j.ssc.2024.115693","url":null,"abstract":"<div><p>This study presents the prediction of a novel 2D nanostructure, C<sub>6</sub>O<sub>2</sub>, characterized as a direct bandgap semiconductor with a rectangular atomic arrangement. Employing computational codes based on density functional theory (DFT), we optimized the lattice parameters, yielding (a = 6.26 Å and b = 2.43 Å). Stability analysis, including cohesive energy (with a value of −7.85 eV/atom) and phonon dispersion within the first Brillouin zone, confirms the acceptable stability of the C<sub>6</sub>O<sub>2</sub> structure. Electronic properties in the ground state were investigated using both HSE06 and GGA approaches. Our results indicate that the predicted structure exhibits a direct bandgap with energy values of 0.108 eV (PBE), 0.11 eV (mBJ), and 0.415 eV (HSE06) at the M point. Furthermore, we explored the optical properties of this nanostructure using the HSE06 approach. Notably, the ground state exhibits moderate absorption across the visible light spectrum (around 3–5 eV) and a low reflection rate. These findings suggest that C<sub>6</sub>O<sub>2</sub> holds promise for future experimental endeavors in designing electro-optical applications.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115693"},"PeriodicalIF":2.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142232566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Alviz-Meza , X. Sierra-González , A. Martínez-de la Cruz , J.A. Colina-Marquez
{"title":"Rapid NO conversion with an enhanced Sm+3-TiO2 photocatalyst","authors":"A. Alviz-Meza , X. Sierra-González , A. Martínez-de la Cruz , J.A. Colina-Marquez","doi":"10.1016/j.ssc.2024.115692","DOIUrl":"10.1016/j.ssc.2024.115692","url":null,"abstract":"<div><p>Nitrogen oxides (NO<sub>x</sub>) are known for having a significant greenhouse effect and provoking several health issues. Because of that, it is necessary to find an effective manner to remove them from polluted air. In this study, samarium-doped titania was synthesized via sol-gel using two different synthesis routes and varying the calcination temperature and the Sm<sup>3+</sup> content. The main difference between the two syntheses was the pH solution. The acidic pH favored the presence of the anatase crystalline phase, the most photoactive and interesting for photocatalytic applications. Furthermore, these catalysts were evaluated in a lab-scale UV photoreactor following the NO conversion via chemiluminescence, according to the ISO standard 22197–1. The Sm content positively affected the NO removal. The highest NO conversion was 92 %, with the doped titania obtained at a calcination temperature of 500 °C and with 0.5 % wt. of samarium. This result was congruent with the reported literature's energy bandgap estimated (2.98 eV).</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115692"},"PeriodicalIF":2.1,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0038109824002692/pdfft?md5=4729f0cd182f3b6f8fe65a64b3a8a495&pid=1-s2.0-S0038109824002692-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"New method for constructing phase diagrams in 2D centered tetragonal Ising nanoparticles using the cellular automata approach","authors":"Somayeh Hemmati, Mehrdad Ghaemi","doi":"10.1016/j.ssc.2024.115691","DOIUrl":"10.1016/j.ssc.2024.115691","url":null,"abstract":"<div><p>In this study, both ferromagnetic and antiferromagnetic spin configurations of a 2D-centered tetragonal Ising nanoparticle with two types of exchange interactions (<em>J</em> and <em>Jr</em>) are considered. A newly introduced algorithm using Cellular Automata simulation method, which is relied on counting the states with a magnitude of magnetization per site exceeding a threshold value <em>m</em><sub><em>t</em></sub>, is used to compute the value of the reduced critical temperature. The sensitivity of the critical temperature value to the lattice size and exchange interactions (The ratio of <em>Jr/J</em> denoted by <em>r</em> parameter) are examined. The results show that the value of the critical temperature increases with increasing lattice size with a decreasing slope. Moreover, the same behavior was observed in ferromagnetic and antiferromagnetic cases.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115691"},"PeriodicalIF":2.1,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The compatible design of wave controlling metamaterial with multi-layers","authors":"Z. Zhang, J.Y. Chen, J.C. Guo, J.R. Li","doi":"10.1016/j.ssc.2024.115684","DOIUrl":"10.1016/j.ssc.2024.115684","url":null,"abstract":"<div><p>A new multi-layers phononic crystal (PnCs) with outer and inner supporting beams is designed to show how the different layers affect the band gap (BG) formations and the corresponding frequency ranges. The BG structures of the designed PnCs revealed that the natural frequencies of the different layers should be compatible for the BG formations although weak interface/support is generally recognized to lead to wide band gaps (BGs). The excessive long supporting beam can reduce the natural frequencies of the current layer leading to incompatibility for the formation of BGs. This can cause the decrease of BG and even disappearance of BG in PnCs. The formed BG frequencies are highly relevant to both the material property (<em>E</em>/<em>ρ</em>) and the geometrical properties (<em>I</em>/<em>S</em> and <em>l</em>). The change of the vibration mode from one layer to another is the key for the opening of the new BGs in the designed PnCs. The increase of <em>E</em>/<em>ρ</em> can lead to the increase of the BG frequencies. This is the reason that the use of non-metals in PnCs can lead to the obvious decrease of BG frequencies in comparison with PnCs with metals.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115684"},"PeriodicalIF":2.1,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142150818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structural, electronic, and phonon properties of Gallium Sulfide (GaS)","authors":"Nguyen Thi Han, Nguyen Thi Thuy, Dam Nhan Ba","doi":"10.1016/j.ssc.2024.115683","DOIUrl":"10.1016/j.ssc.2024.115683","url":null,"abstract":"<div><p>In this study, we explore the geometric characteristics, electronic, and phonon properties, and specific heat capacity of the monolayer and bulk GaS systems. The approach relies on the density functional theory (DFT), which involves diverse atom vibrations and examines several key aspects: the energy band structures, the weighted band structure corresponding to van Hove singularities in the density of states, the phonon energy band structure where atoms dominate across different frequency ranges, and the analysis of the projected phonon density of states. On the other hand, the thermal properties at extremely low temperatures will be elucidated using in-plane and out-of-plane vibrations, phonon dispersion, and polarizations as key components of the analysis. This work holds significant importance, not only in the realm of fundamental physics but also in practical technical applications. Many of the anticipated outcomes presented in this research necessitate meticulous high-resolution experimental scrutiny for validation.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115683"},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142150816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Tuning electronic and thermoelectric properties of armchair graphene nanoribbon in the presence of electron phonon coupling","authors":"T. Kakavandi, H. Rezania","doi":"10.1016/j.ssc.2024.115682","DOIUrl":"10.1016/j.ssc.2024.115682","url":null,"abstract":"<div><p>Electronic and thermoelectric properties of armchair graphene nanoribbon taking into account the effects of interaction between electrons and Einstein phonons have been addressed. Specially we study the temperature dependence of thermal conductivity, density of states and specific heat of the structure. The effects of electron phonon coupling strength on thermal conductivity and thermoelectric electronic of the system have been studied. Green’s function method has been implemented to obtain electronic properties of the system in the context of Holstein Hamiltonian. One loop electronic self-energy of the Hamiltonian has been obtained in order to find interacting electronic Green’s function. The transport and thermoelectric properties of armchair graphene nanoribbon in the presence of electron phonon coupling can be readily found using interacting Green’s function based on Kubo formula. We find numerical results for chemical potential dependence of thermal conductivity and thermoelectric properties in the presence of Holstein phonons. Specially the behaviors of Seebeck coefficient, power factor function, figure of merit and Lorenz number of the system have been analyzed. Our results show turning on electron phonon coupling leads to reduction of band gap in density of states of the armchair nanoribbon.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115682"},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142150819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Unveiling the energy driven potential Sc-based double perovskite through comprehensive DFT screening on physical, optoelectronic and transport characteristic of Sr2ScAsO6 compound","authors":"Sushil Kumar Singh , Jisha Annie Abraham , Anshuman Srivastava , K.L. Meena , Rafa Almeer , Mumtaz Manzoor , Ramesh Sharma","doi":"10.1016/j.ssc.2024.115676","DOIUrl":"10.1016/j.ssc.2024.115676","url":null,"abstract":"<div><p>Recently, double perovskites have been emerged as promising candidates due to their enthralling electronic as well as thermoelectric properties. In our present investigation, we have made a systematic effort to evaluate the optical properties along with elastic, mechanical and thermoelectric properties of Sr<sub>2</sub>ScAsO<sub>6</sub> using DFT tactics as implemented with WIEN2k code. The exchange - correlation potential has been treated with various approximations like LDA, PBE-GGA, WC-GGA and PBE-sol GGA. The formation energy, cohesive energy and tolerance factor have been computed for the studied double perovskite to confirm its thermodynamic as well as structural stability in the cubic phase. The ductility as well as brittleness of the compound have been checked by evaluating the <span><math><mrow><mi>B</mi><mo>/</mo><msub><mi>G</mi><mi>H</mi></msub></mrow></math></span> and Poisson's ratios. The value of band gap is found to be 2.147 eV with PBE-GGA + TB-mBJ method, which is the accurate mode of band gap computations. The spin-orbit coupling effect and its exclusion were considered during the calculations. The temperature and pressure dependency of thermodynamic properties have been studied with the aid of modified-Gibbs2 model. The thermoelectric behaviour of the studied double perovskite has been explored and found to hold a power factor of 12.2 × 10<sup>12</sup> W m<sup>−1</sup> K<sup>−2</sup> s<sup>−1</sup> at 1200 K. As these compositions have high room temperature figure of merit values and recorded values of 0.035, they are also suitable for application in thermoelectric devices.</p></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"394 ","pages":"Article 115676"},"PeriodicalIF":2.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142150817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}