Solid State Communications最新文献_第7页

Design and optimization of an efficient 2D Dion-Jacobson perovskite/AgInSe solar cells

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-29 DOI: 10.1016/j.ssc.2025.115857

Ziyad Younsi , Faycal Meddour , Hichem Bencherif , Asad Syed , Meenakshi Verma , Tarek Hidouri , P. Sasikumar

{"title":"Design and optimization of an efficient 2D Dion-Jacobson perovskite/AgInSe solar cells","authors":"Ziyad Younsi , Faycal Meddour , Hichem Bencherif , Asad Syed , Meenakshi Verma , Tarek Hidouri , P. Sasikumar","doi":"10.1016/j.ssc.2025.115857","DOIUrl":"10.1016/j.ssc.2025.115857","url":null,"abstract":"<div><div>This study proposes an efficient design for 2D Dion-Jacobson Perovskite/Chalcopyrite solar cells, replacing the conventional toxic cadmium sulfide (CdS) electron transport layer (ETL) with a two-dimensional BDAPbBr₄ Dion-Jacobson (DJ) perovskite. Using the SCAPS-1D simulator, the performance of the proposed structure was investigated and compared to experimental results, showing excellent agreement. The findings reveal that the inclusion of the BDAPbBr₄ layer improves the open-circuit voltage (VOC) from 0.5 V in the conventional design to 0.74 V in the optimized device. Additionally, the power conversion efficiency (PCE) increases significantly from 6 % to 10.32 %. These enhancements are attributed to the reduced interface defect density, establishment of a favorable band alignment with a spike-like configuration, and improved light transmission due to the wide bandgap of the BDAPbBr₄ layer. The study further examines the impact of key parameters, including the thickness and doping concentration of the layers, temperature effects, and interface defect density, on device performance. The results underscore the importance of optimizing the ETL properties to mitigate recombination losses and enhance charge carrier extraction. Overall, this work highlights the potential of 2D DJ perovskites as an environmentally friendly and efficient alternative to CdS in Chalcopyrite solar cells, paving the way for greener photovoltaic technologies.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115857"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance 405-nm photodetector based on the defect-induced absorption in the rutile GeO2 film

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-29 DOI: 10.1016/j.ssc.2025.115856

Jiabao Liu , Chengming Wei , Cheng Yang , Xinru Lan , Shuiping Huang , Fabi Zhang , Xu Wang

{"title":"High-performance 405-nm photodetector based on the defect-induced absorption in the rutile GeO2 film","authors":"Jiabao Liu , Chengming Wei , Cheng Yang , Xinru Lan , Shuiping Huang , Fabi Zhang , Xu Wang","doi":"10.1016/j.ssc.2025.115856","DOIUrl":"10.1016/j.ssc.2025.115856","url":null,"abstract":"<div><div>Owing to the existence of numerous defect states in the bandgap, ultra-wide bandgap oxide semiconductors (UBOSs) have been considered as promising candidates for broadband photodetections. However, the persistent photoconductivity (PPC) effect induced by the capture of minority carriers in the relaxation process results in a very slow recovery rate, which hampers the development of UBOS based broadband photodetectors. In this work, the high-quality rutile structure GeO<sub>2</sub> (r-GeO<sub>2</sub>) film with an ultra-wide bandgap energy of 4.67 eV has been deposited on the quartz substrate using magnetron sputtering epitaxy technique followed by the thermal annealing process. Taking advantage of the oxygen defect absorption of the r-GeO<sub>2</sub> film, a 405 nm photodetector has been achieved for the first time, which exhibits the photoresponsivity of 6.92 × 10<sup>−3</sup> A/W and the detection rate of 3.06 × 10<sup>9</sup> Jones, respectively, under the optical power density of 0.03 mW/cm<sup>2</sup>. Moreover, a fast decay time of 0.18 s measured at a bias voltage of 30 V has been confirmed for the r-GeO<sub>2</sub>-based photodetector without the PPC effect due to the recombination of non-equilibrium carriers mainly induced by the defect states. The proposed r-GeO<sub>2</sub> based broadband photodetectors enjoy high-performance, cost-effectiveness, convenience, and facile operation, providing a potential solution for broadband photodetection applications.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115856"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The boson-defined thermodynamics at the liquid-solid transition

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-29 DOI: 10.1016/j.ssc.2025.115858

Ulrich Köbler

{"title":"The boson-defined thermodynamics at the liquid-solid transition","authors":"Ulrich Köbler","doi":"10.1016/j.ssc.2025.115858","DOIUrl":"10.1016/j.ssc.2025.115858","url":null,"abstract":"<div><div>Experimental evidence from rare gas (RG) solids, Ne, Ar, Kr and Xe, shows that a boson field orders at the liquid-solid transition. Upon ordering, all bosons condense in the lowest energy state (Bose-Einstein condensation). This is the highest possible thermodynamic order and provides an entropy argument for the surprising exclusion of the interatomic van der Waals interactions from performing the liquid-solid transition. Since the ordered boson field interacts with the atomic system, it defines the observed long-range coherent order of the crystalline state. This order is more perfect than can be expected if the locally anisotropic interatomic interactions would cause the ordering transition. Boson dynamics is evidenced by the observed universal temperature dependence of heat capacity and thermal length changes, ΔL/L<sub>0</sub>, in the critical range below the melting temperature, T<sub>m</sub>. It is argued that the bosons are elastic quadrupole radiation. Upon ordering, boson fields confine themselves to the finite volume of a stationary unit, such as a domain or a mosaic block, and compress the ordered unit increasingly with decreasing temperature. This compression ensures the cohesion of the solids up to T<sub>m</sub>. The low-temperature lattice parameters, therefore, are rather short and the calculated van der Waals cohesive energies are larger by a factor of ten compared to the melting temperatures, T<sub>m</sub>. In analogy to the term magnetostriction, the thermal lattice contractions below T<sub>m</sub> could be termed “elastostriction”.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115858"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of spin-polarized electronic states of CBVN defects in h-BN monolayers

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-28 DOI: 10.1016/j.ssc.2025.115855

Beyza Sarikavak-Lisesivdin, Cagatay Ezen, Sefer Bora Lisesivdin

引用次数: 0

Electronic property modulation of zigzag single-walled silicon nanotubes by carbon doping concentration

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-27 DOI: 10.1016/j.ssc.2025.115852

Meiling Li, Shuang Wang, Ziyue Qian, Linhan He, Ya Liu, Lijun Wu, Naikun Sun

{"title":"Electronic property modulation of zigzag single-walled silicon nanotubes by carbon doping concentration","authors":"Meiling Li, Shuang Wang, Ziyue Qian, Linhan He, Ya Liu, Lijun Wu, Naikun Sun","doi":"10.1016/j.ssc.2025.115852","DOIUrl":"10.1016/j.ssc.2025.115852","url":null,"abstract":"<div><div>The unique properties of silicon nanotubes endow them with broad application prospects in many fields, including biosensors, solar cells and optoelectronic devices. In this paper, the effects of the carbon doping concentration on the geometrical and electronic properties of two sizes of zigzag single-walled silicon nanotubes (ZSiNTs), denoted as ZSiNT (5,0) and ZSiNT (6,0), were investigated by the self-consistent charge density functional tight-binding (SCC-DFTB) method. The increment of the carbon doping concentration can generally improve the structural stability of all the nanotubes, which arises from the increase in the proportion of the short Si-Si bond and the binding energy. Certain patterns of carbon doping have been found to regulate the band gap with a significantly larger band gap opening range for ZSiNT (5,0) compared to ZSiNT (6,0). Energy band structures indicate that carbon-doped ZSiNTs exhibit three conductive types: direct band gap semiconductor, indirect band gap semiconductor, and semi-metals. In addition, the concentration of carbon doping significantly affects the amount of charge transfer, and the charge moves to the position of carbon atom doping.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"397 ","pages":"Article 115852"},"PeriodicalIF":2.1,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, electronic and optical properties of 2D nitride MXene nanolayers under tensile and compressive strain

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-27 DOI: 10.1016/j.ssc.2025.115854

Zahra Ashkavandi , Esmaeil Pakizeh , Abbas Zarifi

{"title":"Structural, electronic and optical properties of 2D nitride MXene nanolayers under tensile and compressive strain","authors":"Zahra Ashkavandi , Esmaeil Pakizeh , Abbas Zarifi","doi":"10.1016/j.ssc.2025.115854","DOIUrl":"10.1016/j.ssc.2025.115854","url":null,"abstract":"<div><div>Using density functional theory, this article calculated the optical and electrical properties of two-dimensional nitride MXene nanolayers. These structures contain M<sub>2</sub>NO<sub>2</sub> MXenes (M = Zr, Ti, Hf and Sc). The effect of tensile and compressive strain on the physical properties of nanolayers was investigated. The electronic properties showed that Sc<sub>2</sub>NO<sub>2</sub> nanolayers are semiconductors in the up and down spins with an energy gap of 2.59 eV and 1 eV, respectively, which can be used in spintronic industries. Also, Zr<sub>2</sub>NO<sub>2</sub>, Ti<sub>2</sub>NO<sub>2</sub> and Hf<sub>2</sub>NO<sub>2</sub> nanolayers are metals. The structural results show that all compounds are stable. In the spin-up state, the gap energy in Sc<sub>2</sub>NO<sub>2</sub> nanolayers increases with increasing compressive strain. In the spin-down state, the opposite of this behavior occurs. Hf<sub>2</sub>NO<sub>2</sub> nanolayers in 6 % tensile strain and Zr<sub>2</sub>NO<sub>2</sub> nanolayers in 4 % tensile strain were very close to the edge of semi-metals. The results of DOS and PDOS confirmed the electronic band structure and d orbitals showed the greatest effect in the metallic and semi-metallic properties of the nanolayers. Optical properties showing the highest refractive index are related to Sc<sub>2</sub>NO<sub>2</sub> nanolayers and the highest amount of absorption occurs in the ultraviolet region. Reducing and increasing the tensile and compressive strain has a great effect on the absorption and reflection of light. The results of this article showed that we can obtain different optical and electrical properties of nanolayers by strain engineering.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115854"},"PeriodicalIF":2.1,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigating structural and electronic features, band gap modulation, and optical absorption in ASnCl₃ (A = Na, K) perovskites for optoelectronic applications

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-25 DOI: 10.1016/j.ssc.2025.115850

Dhan Raj Lawati , Junaid Khan , A. Dutta , Boumaza Akila , Norah Algethami , M.S. Al-Buriahi

{"title":"Investigating structural and electronic features, band gap modulation, and optical absorption in ASnCl₃ (A = Na, K) perovskites for optoelectronic applications","authors":"Dhan Raj Lawati , Junaid Khan , A. Dutta , Boumaza Akila , Norah Algethami , M.S. Al-Buriahi","doi":"10.1016/j.ssc.2025.115850","DOIUrl":"10.1016/j.ssc.2025.115850","url":null,"abstract":"<div><div>This study uses density functional theory (DFT) within the WIEN2k computational framework to explore the structural, elastic, and optoelectronic properties of cubic perovskite compounds ASnCl₃ (A = Na, K). The findings align well with earlier theoretical and experimental studies, confirming the cubic symmetry and structural stability of both materials. Elastic constants were calculated to verify their mechanical stability, revealing that both compounds are ductile and suitable for practical applications. The electronic band structure analysis shows direct band gaps of 1.462 eV for NaSnCl₃ and 0.825 eV for KSnCl₃, suggesting their potential as efficient semiconductors. These properties make them promising candidates for use in electronic and optoelectronic devices. Additionally, the optical properties were analyzed by calculating the absorption spectra over a photon energy range of 0–10 eV. The results indicate excellent absorption and reflectance characteristics, particularly in the visible and ultraviolet regions. This makes ASnCl₃ (A = Na, K) highly suitable for next-generation solar cells and advanced optoelectronic technologies.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115850"},"PeriodicalIF":2.1,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metal–insulator transition in the La1−xYxNiO3 series studied using the GGA + U method

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-23 DOI: 10.1016/j.ssc.2025.115847

Edjan Alves da Silva , Samuel Domenech de Candido , Miguel Abbate

{"title":"Metal–insulator transition in the La1−xYxNiO3 series studied using the GGA + U method","authors":"Edjan Alves da Silva , Samuel Domenech de Candido , Miguel Abbate","doi":"10.1016/j.ssc.2025.115847","DOIUrl":"10.1016/j.ssc.2025.115847","url":null,"abstract":"<div><div>We studied the changes in the electronic structure of La<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>Y<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>NiO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> between x = 0.00 and 0.25. The band structure calculations were carried out using the GGA + U method with U = 1.5 eV. The calculation of La<span><math><msub><mrow></mrow><mrow><mn>0</mn><mo>.</mo><mn>75</mn></mrow></msub></math></span>Y<sub>0.25</sub>NiO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> was performed using the supercell approach. The parent LaNiO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> compound is a paramagnetic metal with a rhombohedral structure. The doped La<sub>0.75</sub>Y<sub>0.25</sub>NiO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> material is an antiferromagnetic insulator with a monoclinic structure, and present a distinct charge disproportionation at the inequivalent Ni sites. This study predicts that a metal–insulator transition is already realized in the La<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>Y<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span>NiO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> series at x=0.25.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"397 ","pages":"Article 115847"},"PeriodicalIF":2.1,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing the thermoelectric performance of Bi2Se3 single crystals via Sn doping

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-21 DOI: 10.1016/j.ssc.2025.115849

Thi Huong Nguyen , Van Quang Nguyen , Phan Van Cuong , Nhat Nguyen Phan , Jong Ho Park , Sudong Park , Sunglae Cho

引用次数: 0

Finite spin units in frustrated spin chains of Ca3Co2O6 and the induced resonant quantum magnetoelectric effect

IF 2.1 4区物理与天体物理

Solid State Communications Pub Date : 2025-01-19 DOI: 10.1016/j.ssc.2025.115848

Gaoshang Gong , Yaran Duan , Xiaoying Chen , Minghao Wang , Zheng Li , Yongqiang Wang , Jin Zhou , Yuling Su

{"title":"Finite spin units in frustrated spin chains of Ca3Co2O6 and the induced resonant quantum magnetoelectric effect","authors":"Gaoshang Gong , Yaran Duan , Xiaoying Chen , Minghao Wang , Zheng Li , Yongqiang Wang , Jin Zhou , Yuling Su","doi":"10.1016/j.ssc.2025.115848","DOIUrl":"10.1016/j.ssc.2025.115848","url":null,"abstract":"<div><div>The subtle magnetic structure of one-dimensional frustrated Ca<sub>3</sub>Co<sub>2</sub>O<sub>6</sub> has become a puzzling issue for a long time. The mechanism of its fractional magnetization steps also remains in debate. In this study, our experimental results demonstrate that two kinds of finite spin units (isolated Co single-ion and dimer) form in the frustrated spin chains. The quantum tunneling of the isolated Co single-ion and dimer causes the magnetization jumps around 1.2 T and 2.4 T. For the third magnetization step around <em>μ</em><sub>0</sub><em>H</em><sub><em>S3</em></sub> = 3.6 T, it can be interpreted by the field induced transition from ferrimagnetic order to ferromagnetic order. At tunneling fields, the magnetic field dependent dielectric permittivity presents obvious anomalies, implying the resonant quantum magnetoelectric coupling effect. This resonant effect was first observed in Ca<sub>3</sub>Co<sub>2</sub>O<sub>6</sub>, it supplies additional evidence for the quantum tunneling. The present work not only extends the resonant quantum magnetoelectric coupling effect to spin frustrated Ca<sub>3</sub>Co<sub>2</sub>O<sub>6,</sub> but also plots the subtle magnetic structure of Ca<sub>3</sub>Co<sub>2</sub>O<sub>6</sub>.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"397 ","pages":"Article 115848"},"PeriodicalIF":2.1,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0