Solid State Communications最新文献

{"title":"Investigation of magnetocaloric effect of Dy2Ru2O7 at cryogenic temperature","authors":"Subrata Das ,&nbsp;Tirthankar Chakraborty","doi":"10.1016/j.ssc.2025.115853","DOIUrl":"10.1016/j.ssc.2025.115853","url":null,"abstract":"<div><div>In this study, we report on the preparation and magnetocaloric properties of Dy₂Ru₂O<span><math><msub><mrow></mrow><mrow><mn>7</mn></mrow></msub></math></span>. Our investigation reveals that the system exhibits crucial characteristics for becoming a promising magnetocaloric material at low temperatures, including significantly high saturation magnetization. The magnetocaloric effect at low temperatures is substantially large, with a magnetic entropy change (<span><math><mrow><mi>Δ</mi><mi>S</mi></mrow></math></span>) of 10.15 J Kg⁻¹ K⁻¹ for a field change of 20 kOe at 4 K, reaching a maximum of 15.08 J Kg⁻¹ K⁻¹ for a field change of 70 kOe at 6 K. Additionally, the material is expected to demonstrate strong efficiency across a broad temperature range of at least 10 K. These findings suggest that Dy₂Ru₂O<span><math><msub><mrow></mrow><mrow><mn>7</mn></mrow></msub></math></span> is an excellent candidate for low-temperature magnetic refrigeration, particularly suitable for applications near cryogenic temperatures, including liquid helium temperature.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115853"},"PeriodicalIF":2.1,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial optimization and enhancement of electrical properties of Ti-doped ZrO2 gate dielectric films prepared by the sol-gel method","authors":"Chaozhong Guo ,&nbsp;Kamale Tuokedaerhan ,&nbsp;Zhenhua Huang ,&nbsp;Zhengang Cai ,&nbsp;Margulan Ibraimov ,&nbsp;Serikbek Sailanbek","doi":"10.1016/j.ssc.2025.115860","DOIUrl":"10.1016/j.ssc.2025.115860","url":null,"abstract":"<div><div>As the conventional gate dielectric material <span><math><mrow><mtext>Si</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> is no longer sufficient for metal-oxide-semiconductor (MOS) electronic devices, the replacement of <span><math><mrow><mtext>Si</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> with high-k material <span><math><mrow><mtext>Zr</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> has proven to be an effective strategy for further reducing device feature size. In this study, we optimized the crystallization temperature, dielectric constant, and interfacial quality of <span><math><mrow><mtext>Zr</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> thin films by exploring the appropriate Ti doping concentration. This approach addresses the issue of large leakage current in MOS capacitor applications. To easily adjust the Ti content and reduce the cost, <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span> thin films with varying Ti concentrations were deposited on Si substrates using a sol-gel method. The effects of different Ti doping concentrations on the structural, optical, interfacial chemical, and electrical properties of the <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span> films were systematically evaluated using various characterization techniques. The results indicate that the ZTO-12 sample exhibits an excellent dielectric constant (36.5), a large conduction band offset (2.86 eV), a small hysteresis (0.05 V), and a low leakage current density (<span><math><mrow><mn>9.2</mn><mo>×</mo><msup><mn>10</mn><mrow><mo>−</mo><mn>5</mn></mrow></msup><mspace></mspace><mi>A</mi><mo>/</mo><msup><mtext>cm</mtext><mn>2</mn></msup></mrow></math></span>). Additionally, the leakage current conduction mechanism of the Al/ <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span>/Si capacitor was analyzed, which mainly includes ohmic conduction, Schottky emission, and Poole-Frenkel emission. In summary, the optimal Ti doping concentration is 12 %, at which point the <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span> films exhibit excellent integrated properties. These findings will provide new insights for enhancing the performance of high-k materials in MOS electronic devices.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115860"},"PeriodicalIF":2.1,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and optical investigations of lithium-modified lead bismuth borate glasses","authors":"Divya Yadav ,&nbsp;Rajni Bala ,&nbsp;Sumit Chauhan ,&nbsp;Sanjay Gaur","doi":"10.1016/j.ssc.2025.115859","DOIUrl":"10.1016/j.ssc.2025.115859","url":null,"abstract":"<div><div>Alkali-contained oxide glasses having the composition xLi₂O+20PbO+(25-x)Bi₂O₃+55B₂O₃ (where 5 ≤ x ≤ 25 mol%) were synthesized at 1423 K by melt quenching process. XRD analysis confirmed the amorphous nature of the glasses, with no crystalline peaks observed. The derived values of parameters viz. density (<em>ρ</em>), molar volume (<em>V_m</em>), crystalline volume (<em>V_c</em>), and interionic distance (<em>R_i</em>) decrease along with the Li₂O concentration. Glassy nature of prepared glasses is also confirmed by the lower value of <em>V_c</em> than <em>V_m</em>. FTIR studies indicate that the glasses are composed of [BO₄], [BO₃], [BiO₃], and [PbO₄] main structural units, and with the rise in Li₂O concentration [BO₃] units transformed into [BO₄] structural units. Optical absorption study reveals that with the increase in Li₂O concentration band gap energy (<em>E_g</em>) increases while cut-off wavelength (<em>λ_cutoff</em>), and refractive index (<em>n</em>) decrease due to a decrease in nonbridging oxygens (NBOs). The decrease in Urbach energy (<em>ΔE</em>) with increasing lithium oxide concentration suggests a reduction in defect density. The as-prepared glasses exhibit relatively high values of refractive index (2.814–2.509), optical basicity (1.187–1.063), electronic oxide ion polarizability (3.462–2.751 Å³), and metallization criterion (0.302–0.361). Thus, these glasses hold potential for applications in technologies such as memory devices, switches, and optical modulators.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"399 ","pages":"Article 115859"},"PeriodicalIF":2.1,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143420636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and optimization of an efficient 2D Dion-Jacobson perovskite/AgInSe solar cells","authors":"Ziyad Younsi ,&nbsp;Faycal Meddour ,&nbsp;Hichem Bencherif ,&nbsp;Asad Syed ,&nbsp;Meenakshi Verma ,&nbsp;Tarek Hidouri ,&nbsp;P. Sasikumar","doi":"10.1016/j.ssc.2025.115857","DOIUrl":"10.1016/j.ssc.2025.115857","url":null,"abstract":"<div><div>This study proposes an efficient design for 2D Dion-Jacobson Perovskite/Chalcopyrite solar cells, replacing the conventional toxic cadmium sulfide (CdS) electron transport layer (ETL) with a two-dimensional BDAPbBr₄ Dion-Jacobson (DJ) perovskite. Using the SCAPS-1D simulator, the performance of the proposed structure was investigated and compared to experimental results, showing excellent agreement. The findings reveal that the inclusion of the BDAPbBr₄ layer improves the open-circuit voltage (VOC) from 0.5 V in the conventional design to 0.74 V in the optimized device. Additionally, the power conversion efficiency (PCE) increases significantly from 6 % to 10.32 %. These enhancements are attributed to the reduced interface defect density, establishment of a favorable band alignment with a spike-like configuration, and improved light transmission due to the wide bandgap of the BDAPbBr₄ layer. The study further examines the impact of key parameters, including the thickness and doping concentration of the layers, temperature effects, and interface defect density, on device performance. The results underscore the importance of optimizing the ETL properties to mitigate recombination losses and enhance charge carrier extraction. Overall, this work highlights the potential of 2D DJ perovskites as an environmentally friendly and efficient alternative to CdS in Chalcopyrite solar cells, paving the way for greener photovoltaic technologies.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115857"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance 405-nm photodetector based on the defect-induced absorption in the rutile GeO2 film","authors":"Jiabao Liu ,&nbsp;Chengming Wei ,&nbsp;Cheng Yang ,&nbsp;Xinru Lan ,&nbsp;Shuiping Huang ,&nbsp;Fabi Zhang ,&nbsp;Xu Wang","doi":"10.1016/j.ssc.2025.115856","DOIUrl":"10.1016/j.ssc.2025.115856","url":null,"abstract":"<div><div>Owing to the existence of numerous defect states in the bandgap, ultra-wide bandgap oxide semiconductors (UBOSs) have been considered as promising candidates for broadband photodetections. However, the persistent photoconductivity (PPC) effect induced by the capture of minority carriers in the relaxation process results in a very slow recovery rate, which hampers the development of UBOS based broadband photodetectors. In this work, the high-quality rutile structure GeO₂ (r-GeO₂) film with an ultra-wide bandgap energy of 4.67 eV has been deposited on the quartz substrate using magnetron sputtering epitaxy technique followed by the thermal annealing process. Taking advantage of the oxygen defect absorption of the r-GeO₂ film, a 405 nm photodetector has been achieved for the first time, which exhibits the photoresponsivity of 6.92 × 10⁻³ A/W and the detection rate of 3.06 × 10⁹ Jones, respectively, under the optical power density of 0.03 mW/cm². Moreover, a fast decay time of 0.18 s measured at a bias voltage of 30 V has been confirmed for the r-GeO₂-based photodetector without the PPC effect due to the recombination of non-equilibrium carriers mainly induced by the defect states. The proposed r-GeO₂ based broadband photodetectors enjoy high-performance, cost-effectiveness, convenience, and facile operation, providing a potential solution for broadband photodetection applications.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115856"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The boson-defined thermodynamics at the liquid-solid transition","authors":"Ulrich Köbler","doi":"10.1016/j.ssc.2025.115858","DOIUrl":"10.1016/j.ssc.2025.115858","url":null,"abstract":"<div><div>Experimental evidence from rare gas (RG) solids, Ne, Ar, Kr and Xe, shows that a boson field orders at the liquid-solid transition. Upon ordering, all bosons condense in the lowest energy state (Bose-Einstein condensation). This is the highest possible thermodynamic order and provides an entropy argument for the surprising exclusion of the interatomic van der Waals interactions from performing the liquid-solid transition. Since the ordered boson field interacts with the atomic system, it defines the observed long-range coherent order of the crystalline state. This order is more perfect than can be expected if the locally anisotropic interatomic interactions would cause the ordering transition. Boson dynamics is evidenced by the observed universal temperature dependence of heat capacity and thermal length changes, ΔL/L₀, in the critical range below the melting temperature, T_m. It is argued that the bosons are elastic quadrupole radiation. Upon ordering, boson fields confine themselves to the finite volume of a stationary unit, such as a domain or a mosaic block, and compress the ordered unit increasingly with decreasing temperature. This compression ensures the cohesion of the solids up to T_m. The low-temperature lattice parameters, therefore, are rather short and the calculated van der Waals cohesive energies are larger by a factor of ten compared to the melting temperatures, T_m. In analogy to the term magnetostriction, the thermal lattice contractions below T_m could be termed “elastostriction”.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115858"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of spin-polarized electronic states of CBVN defects in h-BN monolayers","authors":"Beyza Sarikavak-Lisesivdin,&nbsp;Cagatay Ezen,&nbsp;Sefer Bora Lisesivdin","doi":"10.1016/j.ssc.2025.115855","DOIUrl":"10.1016/j.ssc.2025.115855","url":null,"abstract":"<div><div>This study presents an investigation of the electronic properties of the nitrogen-vacancy adjacent to carbon substitution of boron (C_BV_N) color center in hexagonal boron nitride (h-BN) monolayers, utilizing first-principles density functional theory (DFT) calculations. To understand the effects of this defect on the electronic structure, density of states (DOS), partial DOS (PDOS) behaviors, electron and spin distributions, and charge analysis methods were used. The PDOS analysis provides essential information about the defect-related states and contributions of orbitals from different atoms to each state. Comparisons of charge distributions obtained via Yu-Trinkle, Bader, and Voronoi methods show the reliability of atomic-basin-centered approaches such as Yu-Trinkle and Bader are suggested to be consistent methods for analyzing localized defects. These results contribute to the fundamental understanding of defect engineering in h-BN and can suggest pathways for developing emerging materials for quantum information processing and nanophotonics.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115855"},"PeriodicalIF":2.1,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic property modulation of zigzag single-walled silicon nanotubes by carbon doping concentration","authors":"Meiling Li,&nbsp;Shuang Wang,&nbsp;Ziyue Qian,&nbsp;Linhan He,&nbsp;Ya Liu,&nbsp;Lijun Wu,&nbsp;Naikun Sun","doi":"10.1016/j.ssc.2025.115852","DOIUrl":"10.1016/j.ssc.2025.115852","url":null,"abstract":"<div><div>The unique properties of silicon nanotubes endow them with broad application prospects in many fields, including biosensors, solar cells and optoelectronic devices. In this paper, the effects of the carbon doping concentration on the geometrical and electronic properties of two sizes of zigzag single-walled silicon nanotubes (ZSiNTs), denoted as ZSiNT (5,0) and ZSiNT (6,0), were investigated by the self-consistent charge density functional tight-binding (SCC-DFTB) method. The increment of the carbon doping concentration can generally improve the structural stability of all the nanotubes, which arises from the increase in the proportion of the short Si-Si bond and the binding energy. Certain patterns of carbon doping have been found to regulate the band gap with a significantly larger band gap opening range for ZSiNT (5,0) compared to ZSiNT (6,0). Energy band structures indicate that carbon-doped ZSiNTs exhibit three conductive types: direct band gap semiconductor, indirect band gap semiconductor, and semi-metals. In addition, the concentration of carbon doping significantly affects the amount of charge transfer, and the charge moves to the position of carbon atom doping.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"397 ","pages":"Article 115852"},"PeriodicalIF":2.1,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, electronic and optical properties of 2D nitride MXene nanolayers under tensile and compressive strain","authors":"Zahra Ashkavandi ,&nbsp;Esmaeil Pakizeh ,&nbsp;Abbas Zarifi","doi":"10.1016/j.ssc.2025.115854","DOIUrl":"10.1016/j.ssc.2025.115854","url":null,"abstract":"<div><div>Using density functional theory, this article calculated the optical and electrical properties of two-dimensional nitride MXene nanolayers. These structures contain M₂NO₂ MXenes (M = Zr, Ti, Hf and Sc). The effect of tensile and compressive strain on the physical properties of nanolayers was investigated. The electronic properties showed that Sc₂NO₂ nanolayers are semiconductors in the up and down spins with an energy gap of 2.59 eV and 1 eV, respectively, which can be used in spintronic industries. Also, Zr₂NO₂, Ti₂NO₂ and Hf₂NO₂ nanolayers are metals. The structural results show that all compounds are stable. In the spin-up state, the gap energy in Sc₂NO₂ nanolayers increases with increasing compressive strain. In the spin-down state, the opposite of this behavior occurs. Hf₂NO₂ nanolayers in 6 % tensile strain and Zr₂NO₂ nanolayers in 4 % tensile strain were very close to the edge of semi-metals. The results of DOS and PDOS confirmed the electronic band structure and d orbitals showed the greatest effect in the metallic and semi-metallic properties of the nanolayers. Optical properties showing the highest refractive index are related to Sc₂NO₂ nanolayers and the highest amount of absorption occurs in the ultraviolet region. Reducing and increasing the tensile and compressive strain has a great effect on the absorption and reflection of light. The results of this article showed that we can obtain different optical and electrical properties of nanolayers by strain engineering.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115854"},"PeriodicalIF":2.1,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating structural and electronic features, band gap modulation, and optical absorption in ASnCl₃ (A = Na, K) perovskites for optoelectronic applications","authors":"Dhan Raj Lawati ,&nbsp;Junaid Khan ,&nbsp;A. Dutta ,&nbsp;Boumaza Akila ,&nbsp;Norah Algethami ,&nbsp;M.S. Al-Buriahi","doi":"10.1016/j.ssc.2025.115850","DOIUrl":"10.1016/j.ssc.2025.115850","url":null,"abstract":"<div><div>This study uses density functional theory (DFT) within the WIEN2k computational framework to explore the structural, elastic, and optoelectronic properties of cubic perovskite compounds ASnCl₃ (A = Na, K). The findings align well with earlier theoretical and experimental studies, confirming the cubic symmetry and structural stability of both materials. Elastic constants were calculated to verify their mechanical stability, revealing that both compounds are ductile and suitable for practical applications. The electronic band structure analysis shows direct band gaps of 1.462 eV for NaSnCl₃ and 0.825 eV for KSnCl₃, suggesting their potential as efficient semiconductors. These properties make them promising candidates for use in electronic and optoelectronic devices. Additionally, the optical properties were analyzed by calculating the absorption spectra over a photon energy range of 0–10 eV. The results indicate excellent absorption and reflectance characteristics, particularly in the visible and ultraviolet regions. This makes ASnCl₃ (A = Na, K) highly suitable for next-generation solar cells and advanced optoelectronic technologies.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115850"},"PeriodicalIF":2.1,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}