Solid State Communications最新文献

{"title":"Synergistic enhancement of critical temperature and normal resistance by dual doping in disordered aluminum thin films","authors":"Chanyoung Lee ,&nbsp;Yeonkyu Lee ,&nbsp;Jinyoung Yun ,&nbsp;Juan C. Zapata ,&nbsp;Martin Sirena ,&nbsp;Jeehoon Kim ,&nbsp;Nestor Haberkorn","doi":"10.1016/j.ssc.2025.116103","DOIUrl":"10.1016/j.ssc.2025.116103","url":null,"abstract":"<div><div>We report the electrical transport properties of aluminum thin films grown by reactive RF sputtering in a mixed oxygen-nitrogen atmosphere. The films were deposited at room temperature on oxidized silicon substrates, using a fixed low oxygen concentration and varying nitrogen content. Compared to single-dopant cases reported in the literature, our results suggest a synergistic effect in which nitrogen enhances the superconducting critical temperature (<em>T</em>_<em>c</em>), while oxygen increases the normal-state resistivity. This combined effect is most prominent in the high-resistivity range (1–5 mΩ cm), where the typical dome-like dependence of <em>T</em>_<em>c</em> on normal-state resistivity exhibits values over 0.5 K higher than those of similarly resistive films obtained with only oxygen or nitrogen using sputtering. The corresponding sheet kinetic inductance was estimated under standard BCS assumptions and reaches several hundred pH/sq, consistent with values reported in high-resistivity aluminum films. This dual-doping strategy enables the fabrication of aluminum films that combine enhanced superconductivity with robust normal-state resistance using a simple, scalable deposition method at room temperature. Although the internal structure of the films was not resolved at the nanoscale, their electrical and morphological characteristics fall within the regime typically associated with granular aluminum. These findings demonstrate that controlled disorder engineering through reactive sputtering provides a versatile route to tailor superconducting properties and may extend the operational window of aluminum-based materials for quantum devices, resonators, and microwave kinetic inductance detectors.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116103"},"PeriodicalIF":2.4,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inverse isosbestic point in transverse magnetoresistance of Ce3Pd20Si6 heavy fermion system","authors":"M.A. Anisimov ,&nbsp;A.V. Bogach ,&nbsp;S.V. Demishev ,&nbsp;A.N. Samarin ,&nbsp;A.V. Semeno ,&nbsp;S.V. Gribanova ,&nbsp;S.F. Dunaev ,&nbsp;A.V. Gribanov","doi":"10.1016/j.ssc.2025.116075","DOIUrl":"10.1016/j.ssc.2025.116075","url":null,"abstract":"<div><div>Heavy fermion compound Ce<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Pd₂₀Si<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> (CPS) is known mainly due to the study of quantum criticality in a local-moment system, since antiferromagnetic (AFM) phase transition is fully suppressed by magnetic field. Here we report galvanomagnetic properties [electrical resistivity, transverse magnetoresistance (TMR)] of Ce<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Pd₂₀Si<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> and its non-magnetic counterpart La<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>Pd₂₀Si<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> (LPS). The experiment has been performed on polycrystals of high quality in the temperature range 1.8 <span><math><mo>−</mo></math></span> 300 K in magnetic fields up to 82 kOe. The obtained data allow us for the first time to register the isosbestic point (IP) at <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>i</mi><mi>s</mi><mi>o</mi></mrow></msub></math></span> <span><math><mo>≈</mo></math></span> 8 K, which is very close to the position of inversion point <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>i</mi><mi>n</mi><mi>v</mi></mrow></msub></math></span> <span><math><mo>≈</mo></math></span> 7.4 K, separating positive (<span><math><mrow><mi>T</mi><mo>&gt;</mo><msub><mrow><mi>T</mi></mrow><mrow><mi>i</mi><mi>n</mi><mi>v</mi></mrow></msub></mrow></math></span>) and negative (<span><math><mrow><mi>T</mi><mo>&lt;</mo><msub><mrow><mi>T</mi></mrow><mrow><mi>i</mi><mi>n</mi><mi>v</mi></mrow></msub></mrow></math></span>) regimes of TMR in CPS. The phenomenon when two characteristic temperatures of different nature practically coincide is very unusual, and they may be considered as one temperature scale (inverse isosbestic point). In our opinion <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>i</mi><mi>s</mi><mi>o</mi></mrow></msub></math></span>/<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>i</mi><mi>n</mi><mi>v</mi></mrow></msub></math></span> plays significant role, being the boundary of the formation of spin and orbital correlations in paramagnetic (PM) vicinity of so-called phase II in CPS.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116075"},"PeriodicalIF":2.4,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144840992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DFT study of electronic, optical, and thermodynamic properties of the 2D shape of Bi4O6 structure","authors":"Yadgar Hussein Shwan,&nbsp;Majida Ali Ameen,&nbsp;Aras Saeed Mahmood","doi":"10.1016/j.ssc.2025.116095","DOIUrl":"10.1016/j.ssc.2025.116095","url":null,"abstract":"<div><div>We investigate the electronic, optical, and thermal characteristics of the two-dimensional Bi<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> structure using first-principles calculations. The excellent thermal stability of Bi<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> is confirmed through molecular dynamics simulations at 300 K. The large band gap indicates that Bi<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> behaves as a semiconductor in which the O-<span><math><mi>p</mi></math></span> and Bi-<span><math><mi>p</mi></math></span> states dominate in the valence band and the conduction band, respectively. The existence of a flat band indicates the localization of the O-<span><math><mi>p</mi></math></span> state. The dielectric constant, refractive index, absorption, and optical conductivity are calculated among other important optical characteristics. The optical characteristics provide a robust response in the ultraviolet and edge visible spectrum, indicating the promise of Bi<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> for advanced optical applications. We have successfully calculated the Seebeck coefficients and electrical conductivity at low temperatures, which enables the determination of the power factor value. The high Seebeck and robust power factor confirm its effectiveness in thermoelectric energy converter technology. Moreover, the rise in entropy and heat capacity plateaus at higher temperatures, pointing to a shift into a less ordered phase despite retaining effective thermal energy absorption. The Bi<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> has an extraordinarily low lattice thermal conductivity. Based on its favorable characteristics, Bi<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>O<span><math><msub><mrow></mrow><mrow><mn>6</mn></mrow></msub></math></span> is well-suited for future applications in energy conversion technologies and optoelectronics.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116095"},"PeriodicalIF":2.4,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144809577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vertex correction of generalized spin susceptibility tensor of thin film Weyl fermions","authors":"M. Sami Shiraz,&nbsp;A. Phirouznia","doi":"10.1016/j.ssc.2025.116080","DOIUrl":"10.1016/j.ssc.2025.116080","url":null,"abstract":"<div><div>Spin susceptibility tensor of a thin film Weyl fermion structure is investigated theoretically. In the current study Kubo–Streda approach have been employed by taking into account the vertex corrections, for studying the influence of the vertex corrections on the magnetic response function of a thin film Weyl fermion. In this case the effect of impurity interactions is captured within the Born approximation based Green’s function formalism. Moreover the influence of successive impurity scatterings of electron hole pairs is given by the vertex diagrams within the Bethe–Salpeter equation. Using this approach it was revealed that the vertex corrections decrease spin–spin correlations in this type of the samples.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116080"},"PeriodicalIF":2.4,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144810654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic property of GeI2 nanotubes for hydrogen evolution via water splitting: density functional theory calculations","authors":"Huanyu Zhao ,&nbsp;Xuan Hui ,&nbsp;Yingtao Zhu ,&nbsp;Long Zhang ,&nbsp;Chao Wang","doi":"10.1016/j.ssc.2025.116100","DOIUrl":"10.1016/j.ssc.2025.116100","url":null,"abstract":"<div><div>The geometric structures and electronic properties of single-walled and double-walled GeI₂ nanotubes are investigated using the hybrid density functional (HSE06) in this paper. For single-walled GeI₂ nanotubes, we observed that the band gap values increased with the increase of diameter (band gap from 2.63 to 2.82 eV). Compared with GeI₂ monolayer (2.85 eV), their band gap width is significantly reduced, and occurs in the transition from monolayer to nanotube. Moreover, the double-walled GeI₂ NTs display II-type band structure characteristics and have narrower band gaps compared to single-walled NTs, the nanotube meets the photocatalytic redox potential with pH values between 0 and 7, while better performance in neutral conditions. Meanwhile, the (15, 0)@(30, 0) DW GeI₂ NT have a STH efficiencies of photocatalyst were increased about 2.3-fold higher than that of monolayer (0.94 %). Based on the above analysis, we believe that the double-walled GeI₂ NTs have greater application potential in photocatalytic hydrolysis.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116100"},"PeriodicalIF":2.4,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of LiScNiSi Heusler alloy's physical characteristics under pressure: Use in optoelectronics with the HSE06 hybrid function","authors":"El Mustapha Hrida ,&nbsp;Zakaria El Fatouaki ,&nbsp;Othmane Zedouh ,&nbsp;Abdellah Tahiri ,&nbsp;Mohamed Idiri","doi":"10.1016/j.ssc.2025.116094","DOIUrl":"10.1016/j.ssc.2025.116094","url":null,"abstract":"<div><div>In this study, we used density functional theory <span><math><mrow><mrow><mo>(</mo><mtext>DFT</mtext><mo>)</mo></mrow></mrow></math></span> to analyze the behavior of the unique Heusler-type quaternary compound LiScNiSi at ambient pressure and at pressures ranging from <span><math><mrow><mn>0</mn><mspace></mspace><mtext>to</mtext><mspace></mspace><mn>100</mn><mspace></mspace><mtext>GPa</mtext></mrow></math></span>. The investigation covers the material's mechanical, electronic, optical, and structural properties. <span><math><mrow><mtext>LiScNiSi</mtext></mrow></math></span> has been shown to exhibit semiconducting behavior, characterized by an indirect bandgap that increases under applied pressure in the range of 0 to <span><math><mrow><mn>100</mn><mspace></mspace><mtext>GPa</mtext></mrow></math></span>. Specifically, the bandgap expands from 0.712 eV to 1.466 eV according to calculations performed using the Generalized Gradient Approximation (GGA), and from 1.766 eV to 2.036 eV when using the HSE06 hybrid functional.</div><div>For the valence and conduction bands, calculation of the density of states (DOS) shows that they are mainly made up of Sc and Ni d-orbitals. Increased pressure leads to a reduction in the lattice parameter, from <span><math><mrow><mn>5.979</mn><mspace></mspace><mi>Å</mi></mrow></math></span> to <span><math><mrow><mn>5.241</mn><mspace></mspace><mi>Å</mi></mrow></math></span>, which significantly affects the material's strength and flexibility. Calculations of mechanical properties confirm this hypothesis, showing that the material retains its mechanical stability over the entire range of applied pressures, and adopts a ductile behavior from <span><math><mrow><mn>40</mn><mspace></mspace><mtext>GPa</mtext></mrow></math></span> upwards, in line with Pugh's criterion (B/G &gt; 1.75). Indeed, the B/G ratio varies from 1.755 to 2.081 when the pressure is increased from 40 to <span><math><mrow><mn>100</mn><mspace></mspace><mtext>GPa.</mtext></mrow></math></span></div><div>The dynamic stability of the material in the pressure range studied was also confirmed by the study of phonon dispersion spectra at <span><math><mrow><mn>0</mn><mspace></mspace><mtext>GPa</mtext><mspace></mspace><mtext>and</mtext><mspace></mspace><mn>100</mn><mspace></mspace><mtext>GPa</mtext></mrow></math></span>, as all frequencies were found to be positive. Research into the material's optical properties reveals that it has a high refractive index, substantial optical conductivity, and excellent absorption and reflectivity. This makes LiScNiSi a prime option for applications involving protection from ultraviolet radiation.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116094"},"PeriodicalIF":2.4,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144828248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced gas sensing performance of Janus-type WSeTe monolayers: A first-principles study","authors":"Tian Tang ,&nbsp;Xinyong Cai ,&nbsp;Chunsheng Guo ,&nbsp;Yuxiang Ni ,&nbsp;Yuanzheng Chen ,&nbsp;Sara Ahmed A ,&nbsp;Hongyan Wang","doi":"10.1016/j.ssc.2025.116086","DOIUrl":"10.1016/j.ssc.2025.116086","url":null,"abstract":"<div><div>The emerging field of two-dimensional materials shows promise for advanced gas sensing applications. This study employs first-principles DFT calculations to investigate gas sensing performance of Janus WSeTe monolayers modified with Fe, Co, Ni, and Cu. While pristine WSeTe exhibits weak interaction with CO, SO₂, and NH₃, metal doping significantly enhances adsorption affinity through charge transfer mechanisms. Computational results reveal Cu@WSeTe demonstrates exceptional CO detection capability, while Fe/Ni/Cu-modified samples exhibit strong SO₂ sensing performance. Notably, all TM@WSeTe systems maintain effective NH₃ detection. These findings establish Janus WSeTe monolayers as promising candidates for next-generation toxic gas sensors through strategic metal functionalization. The optimized charge transfer properties enable selective and sensitive detection across multiple target gases, highlighting their potential in environmental monitoring and safety applications.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116086"},"PeriodicalIF":2.4,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144781020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The shift current photovoltaic effect response in monolayer MX2 (M=Mo, W; X=S, Se, Te) via first-principles calculation","authors":"Cai Cheng ,&nbsp;Shi-Wei Hu ,&nbsp;Xiao-Lin Zhou ,&nbsp;Qing Lu ,&nbsp;Xiao-Bin Niu","doi":"10.1016/j.ssc.2025.116096","DOIUrl":"10.1016/j.ssc.2025.116096","url":null,"abstract":"<div><div>Recently, the two-dimensional (2D) bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has garnered significant attention due to its potential for highly efficient 2D solar cells and optoelectronics. The shift current, a key mechanism underlying the BPVE, is crucial for designing the enhanced photovoltaic performance. However, the intrinsic shift current in these materials has not yet been comprehensively and unambiguously studied. Here, we investigate the shift current in monolayers <em>MX</em>₂ (where <em>M</em> = Mo, W, and <em>X</em> = S, Se, Te) materials, which lack spontaneous polarization, using both tight-binding model analysis and first-principles calculations. We construct a tight-binding model based on the local wannier90 functions, incorporating three (<em>d</em>_<em>z</em>², <em>d</em>_<em>x</em>²_{−<em>y</em>}², and <em>d</em>_<em>xy</em>), five, seven, nine, and eleven bands (without or with spin-orbit coupling) to explore the band structure of monolayer <em>MX</em>₂. Our findings indicate that increasing the fitted number of bands improves the accuracy of the model, although fewer bands can still yield meaningful approximations. Specifically, the shift current of the S and Se compounds exhibits a distinct double-peak structure within the visible light range, whereas the Te compounds display no obvious peak structure. By analyzing the partial density of states, we find that the double-peak structure corresponds to the peak positions of the Mo atom's <em>d</em>_<em>x</em>²_{−<em>y</em>}² and <em>d</em>_<em>xy</em> orbitals, as well as the S atom's <em>p</em>_<em>y</em> and <em>p</em>_<em>x</em> orbitals. Additionally, the location of the double peak coincides with the discontinuity point of the joint density of states. Our study elucidates the energy density of states to understand the origin of the shift current peak and offers a theoretical basis for the design of 2D bulk photovoltaic effects.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116096"},"PeriodicalIF":2.4,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144772794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic, half-metallicity, electronic, elastic, and thermodynamic studies of new lead-free halide double perovskites Cs2GdAuCl6: Ab-initio analysis","authors":"A. Natik ,&nbsp;A. Bouhmouche ,&nbsp;H. Hamouda ,&nbsp;R. Moubah ,&nbsp;Y. Arba ,&nbsp;F. Khelfaoui ,&nbsp;H. Zaari ,&nbsp;H. Lassri ,&nbsp;M. Abid ,&nbsp;B. Harradi","doi":"10.1016/j.ssc.2025.116091","DOIUrl":"10.1016/j.ssc.2025.116091","url":null,"abstract":"<div><div>We explore the structural, electronic, magnetic, optical, elastic, and thermodynamic properties of lead-free double perovskite Cs₂GdAuCl₆ using density functional theory (DFT). The material crystallizes in a cubic phase (Fm-3m) with a formation energy of −1.82 eV/atom. It exhibits half-metallicity, with a 1.7 eV band gap in the spin-down channel and metallic behavior in the spin-up direction. A total magnetic moment of 7 μB per formula unit is obtained, mainly due to the Gd atom with a ferromagnetic order. The optical analysis yields a static dielectric constant of ε₁(0) = 3.32 and a refractive index of n(0) = 1.82, making the compound suitable for optoelectronic applications. Elastic constants C₁₁ = 52.10 GPa, C₁₂ = 27.46 GPa, and C₄₄ = 9.67 GPa confirm mechanical stability, with a B/G ratio of 2.43, indicating ductile behavior, and a Zener anisotropy factor of 0.79, highlighting moderate elastic anisotropy. Thermodynamic properties calculated using the quasi-harmonic Debye model shows that at 300 K, the specific heats are C_v = 244.2 J/mol·K and C_p = 258.1 J/mol·K, demonstrating good thermal stability.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116091"},"PeriodicalIF":2.4,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144757558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dual-frequency/broadband switchable and dynamically tunable metamaterial terahertz absorber based on graphene and VO2","authors":"Yonglin Zhu ,&nbsp;Zhen Cui ,&nbsp;Shuang Zhang ,&nbsp;Lu Wang","doi":"10.1016/j.ssc.2025.116087","DOIUrl":"10.1016/j.ssc.2025.116087","url":null,"abstract":"<div><div>This study presents a tunable terahertz (THz) metamaterial absorber capable of dual-frequency and broadband absorption modes. The device consists of a gold substrate, a Topas dielectric layer, and a resonant layer featuring a graphene hollow cross and a VO₂ cross. In the insulating state of VO₂ with graphene's chemical potential at 0.7 eV, the absorber achieves near-perfect dual-frequency absorptivity (99.4 % at 0.807 THz and 98.6 % at 2.166 THz). When VO₂ transitions to its metallic phase and graphene's chemical potential is adjusted to 0.4 eV, it exhibits broadband absorption, maintaining over 90 % efficiency across a 0.879 THz bandwidth (0.993–1.872 THz). The absorber is polarization-insensitive and dynamically tunable, with consistent performance at incident angles from 0° to 60°. A detailed analysis of the absorption mechanism and structural parameters is provided, highlighting its potential for advancing multifunctional terahertz absorbers, detectors, and sensor technologies.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"404 ","pages":"Article 116087"},"PeriodicalIF":2.4,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144757556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}