Solid State Communications最新文献

{"title":"Magnetic phase transition and magnetocaloric effects in antiferromagnetic DyAgGe intermetallic compound","authors":"Wenchang Zhang,&nbsp;Jiameng Xu,&nbsp;Zhaoxing Wang,&nbsp;Yikun Zhang","doi":"10.1016/j.ssc.2025.116289","DOIUrl":"10.1016/j.ssc.2025.116289","url":null,"abstract":"<div><div>In this work, we fabricated the single-phased DyAgGe intermetallic compound and experimentally determined its crystal structure, magnetic phase transition (MPT) and magnetocaloric properties. Our studies indicated that the DyAgGe intermetallic compound crystallizes in a hexagonal ZrNiAl-type (space group of <em>P-62m</em>) structure and shows antiferromagnetic ordering below <em>T</em>_N of 13.5 K. Moderate conventional cryogenic magnetocaloric effect (MCE) in DyAgGe intermetallic compound together with inverse MCE have been observed which are attributed to its unique field-aligned first-order type MPT from antiferromagnetic ground state to ferromagnetic-like state. The MCE parameters of maximum magnetic entropy change and relative cooling power/refrigerant capacity (magnetic field variation of 0–70 kOe) for DyAgGe intermetallic compound are deduced to be 7.26 J/kgK and 211.3/148.8 J/kg, respectively.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116289"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145921161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative study of NiB2O4 (B = Co, Fe, and Al) spinel nanoparticles: Structural, morphological, optical, and photocatalytic properties","authors":"Soumaia Khaldi ,&nbsp;Abdelfattah Allaoui ,&nbsp;Louiza Zenkhri ,&nbsp;Safa Besra ,&nbsp;Ece Tugba Saka ,&nbsp;Cagla Akkol ,&nbsp;Hakim Belkhalfa","doi":"10.1016/j.ssc.2025.116307","DOIUrl":"10.1016/j.ssc.2025.116307","url":null,"abstract":"<div><div>In this work, nickel-based spinel oxides with the general formula NiB₂O₄ (B = Co, Fe, and Al) were synthesized via a facile combustion method to explore the role of B-site cations in tuning their physical and photocatalytic behavior. The main properties and oxidation states of the samples were comprehensively examined using various characterization tools, including X-ray diffraction (XRD), scanning electron microscopy with energy-dispersive spectroscopy (SEM-EDS), UV–visible spectroscopy, and X-ray photoelectron spectroscopy (XPS). The structural study by XRD affirmed the formation of crystal spinel phases for NiCo₂O₄, NiFe₂O₄ and NiAl₂O₄ with a mean crystallite size between 22 and 44 nm. Morphological SEM images well defined the spherical and nanosized grain crystals for all the samples. BET analysis further indicated that NiFe₂O₄ possesses a high specific surface area of 78 m² g⁻¹ and a pore width of 11.5 nm. The optical results showed that the obtained samples have an energy bandgap (Eg) value of 2.25, 1.73, and 2.24 eV for NiCo₂O₄, NiFe₂O₄, and NiAl₂O₄, respectively. The synthesized spinel oxides were evaluated as photocatalysts under UV light for the degradation of methylene blue dye (MB) and 4-nitrophenol(4-NP). The photodegradation results show that NiFe₂O₄ spinel exhibits the high rates with an efficiency of 86.65 % for MB within 80 min and a conversion rate of 70 % for 4-NP in only 15 min.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116307"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145921122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers","authors":"Maksymilian Kuna ,&nbsp;Mateusz Raczyński ,&nbsp;Julia Kucharek ,&nbsp;Takashi Taniguchi ,&nbsp;Kenji Watanabe ,&nbsp;Tomasz Kazimierczuk ,&nbsp;Wojciech Pacuski ,&nbsp;Piotr Kossacki","doi":"10.1016/j.ssc.2025.116263","DOIUrl":"10.1016/j.ssc.2025.116263","url":null,"abstract":"<div><div>We report an experimental study of the magnetic-field dependence of the optically pumped valley polarization in an epitaxial tungsten diselenide (WSe₂) monolayer grown by molecular-beam epitaxy (MBE) on a hexagonal boron nitride (hBN) substrate. Circularly polarized photoluminescence (PL) measurements reveal that applying a weak out-of-plane magnetic field, on the order of 0.1 T, dramatically increases the effectiveness of the optical orientation of the emission associated with defect-bound localized excitons. We compare the obtained results with the earlier studies on the reference exfoliated monolayers, discussing both qualitative similarity as well as quantitative differences. Our observations are further supplemented by the results of time-resolved PL measurements, which confirm the pseudospin relaxation time of approximately 25 ps, a value significantly shorter than the <span><math><mo>≈</mo></math></span>100 ps previously reported for mechanically exfoliated samples.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116263"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145692263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning hydrothermal conditions for superior electrochemical performance of WS2 nanosheets","authors":"Anjali Ghanghass ,&nbsp;Ravi Bhatia ,&nbsp;Mamta Bulla ,&nbsp;Vinay Kumar","doi":"10.1016/j.ssc.2025.116248","DOIUrl":"10.1016/j.ssc.2025.116248","url":null,"abstract":"<div><div>The study presents the tailored synthesis of WS₂ nanosheets for energy storage applications. Several samples of WS₂ nanosheets were synthesized by simple hydrothermal route at different pH levels of the precursor solution. The structural and morphological analysis was performed using characterization techniques including X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and electron microscopy. After performing the electrochemical measurements, an enhancement in the specific capacitance value of WS₂- pH 5 sample was observed. The specific capacitance of WS₂- pH 5 was found to be 167 F/g at a current density of 1 A/g which is about 5 times greater than the WS₂-pH 7 nanosheets. This increase in the specific capacitance at pH 5 can be attributed to its smaller crystallite size and higher porosity. Thus, optimizing the synthesis conditions of WS₂ nanosheets effectively improved energy storage capabilities.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"408 ","pages":"Article 116248"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145578503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and thermoelectric properties of aluminum-doped CdO synthesized via Composite-hydroxide-mediated (CHM) approach","authors":"Khan Karim ,&nbsp;Rizwan Akram ,&nbsp;Jan Sher Khan ,&nbsp;Saima Rafique ,&nbsp;Mozaffar Hussain ,&nbsp;Muhammad Raza Hussain ,&nbsp;Aon Muhammad ,&nbsp;Zahid Qamar ,&nbsp;Shehryar Zeeshan","doi":"10.1016/j.ssc.2025.116243","DOIUrl":"10.1016/j.ssc.2025.116243","url":null,"abstract":"<div><div>Aluminum (Al) doped cadmium oxide CdO, x= (1 %, 3 %, 5 %, 7 %) was synthesized in the recent study via a composite hydroxide mediated (CHM) method. X-ray diffraction (XRD) confirmed the synthesis of pure CdO and the Al-doping in cubic cadmium oxide. The decrease in the lattice constant in Al-doped CdO confirmed the adequate substitution of Cd⁺² by Al⁺³ ions in the CdO samples. Nanoscale particles and the morphology of the samples were examined through Field Emission Scanning Electron Microscopy (FESEM). Energy Dispersive Spectroscopy (EDX) was performed to verify the presence of Cd, O, and Al. Electrical conductivity, Seebeck coefficient, and thermal conductivity were recorded in the temperature range of 323–773 K. The electrical conductivity increased with increasing Al concentration, reaching an optimal value at x = 7 %. The n-type behavior was confirmed by the negative Seebeck coefficient of samples. The thermal conductivity was significantly reduced due to defects in the crystal lattice. The figure of merit, <em>ZT</em> measured from electrical conductivity, Seebeck coefficient and thermal conductivity data was observed to reach 0.221 for 7 % Al-doped CdO at 773 K. Consequently, in the present research, the thermoelectric figure of merit revealed a significant improvement of 63.70 % relative to the pure CdO at 773 K.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"408 ","pages":"Article 116243"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145578501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemical study of highly efficient CuFe2O4/R-GO based electrode material","authors":"Sandeep Kumar ,&nbsp;Naveen Chandra Joshi ,&nbsp;B.S. Rawat","doi":"10.1016/j.ssc.2025.116272","DOIUrl":"10.1016/j.ssc.2025.116272","url":null,"abstract":"<div><div>Ferrites have many advanced magnetic and electronic properties and are also considered efficient electrode materials for supercapacitors and other energy storage devices. Ferrites and ferrite-based electrode materials have high specific capacitance, low synthetic cost, and easy availability. Copper ferrite (CuFe₂O₄) and its hybrid materials have received remarkable attention for their applications in energy storage devices. These materials have also been used in sensors, water purification, catalysis, and solar cells. In this study, we have used CuFe₂O₄/R-GO as electrode material for supercapacitors. Experimental results indicate that after incorporation of graphene, the specific capacitance of CuFe₂O₄ was found to be 746.6 F/g, and its cyclic stability was 90.8 % (under a 2-electrode system). The maximum specific capacitance of CuFe₂O₄/R-GO under a 2-electrode system was found to be 44.4 F/g at 2 A/g. The maximum energy and power densities of CuFe₂O₄/R-GO were evaluated to be 5.1 Wh/kg and 4492.8 W/kg, respectively.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116272"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145748816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Topological semiconducting behavior in (VxBi1-x)2Se3 (x = 0.1): Atomic-scale structure, morphology and magneto-electronic transport","authors":"Marriam Zaqa ,&nbsp;Eman Yousif Adam Musa ,&nbsp;Mudassir Hayat ,&nbsp;Chi Wang ,&nbsp;Jinbo Zhang ,&nbsp;Rong Xing Cao ,&nbsp;Guoqing Wu ,&nbsp;Qiuliang Wang","doi":"10.1016/j.ssc.2025.116301","DOIUrl":"10.1016/j.ssc.2025.116301","url":null,"abstract":"<div><div>Topological semiconductors have recently emerged as promising materials for investigating interesting quantum transport phenomena and developing spintronic devices. This study presents structural, morphological and magneto-electronic properties of vanadium-doped Bi₂Se₃ ((V_xBi_1-x)₂Se₃, x = 0.1) single crystals grown by the Bridgman-Stockbarger method. Structural characterization revealed high crystallinity (97.57 %) with an average crystallite size of 51.67 nm, while HRTEM confirmed well-ordered lattice fringes (0.290 nm spacing) and hexagonal symmetry. Surface analysis showed layered morphology with exceptional smoothness (RMS roughness: 0.025 nm) and uniform layer spacing (1.0–1.5 nm). Electronic transport measurements revealed remarkable magneto-transport behavior, including a giant positive magnetoresistance (99.95 %) that saturates at low fields (1 T). The material exhibits semiconducting behavior with charge transport governed by thermal activation across a band gap of approximately 0.17 eV, as confirmed by Arrhenius analysis. The absence of weak antilocalization features and the bulk-dominated conduction indicate that vanadium doping modifies the electronic properties, making the material promising for magneto-transport applications.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116301"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of superconducting boundaries and uniaxial anisotropy on electromagnetic wave propagation in the rectangular waveguides","authors":"Yasir Masheh ,&nbsp;Burhan Zamir ,&nbsp;A. Ahmad","doi":"10.1016/j.ssc.2025.116292","DOIUrl":"10.1016/j.ssc.2025.116292","url":null,"abstract":"<div><div>A theoretical study on the wave propagation in the superconducting rectangular waveguide (SRW) filled with uniaxial anisotropic metamaterial (UA-MTM) is carried out for the transverse electric (TE) mode. In this connection, first the dispersion relation is obtained analytically by using electromagnetic field theory for the rectangular waveguide by applying the Meissner boundary condition (MBC) for superconductors. Then the analytical expressions of power transmitted, power loss and attenuation constant are also obtained. After that the dispersion curves are obtained numerically and the trends of these dispersion curves reveal that the presented waveguide model may be used as a bands-rejection as well as pass-bands filter with forward and backward characteritics in the multifunction microwave devices. Further, the dominant mode is found to be TE¹⁰ in SRW which is in good agreement with the experimental study. The losses are also calculated by obtaining the numerical results of the attenuation constant and it is found that such a waveguide offer minimum losses as compared to conventional waveguides (CWGs) and other superconducting rectangular waveguides (SRWs).</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116292"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145880188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of dual (Al, Ni) doping on the photocatalytic behavior of ZnO semiconductor thin films","authors":"Safa Besra ,&nbsp;Sabrina Iaiche ,&nbsp;Karima Belakroum ,&nbsp;Sadia Bergoug","doi":"10.1016/j.ssc.2026.116321","DOIUrl":"10.1016/j.ssc.2026.116321","url":null,"abstract":"<div><div>In this work, pure ZnO, Al:ZnO, and Al–Ni:ZnO thin films were effectively fabricated on glass slides using a simple and cost-effective spray pyrolysis technique. UV–Vis, XRD, FTIR, SEM, and EDS techniques were systematically used to investigate the properties of the prepared layers. XRD analysis confirmed the formation of highly crystalline ZnO with a wurtzite structure preferentially oriented along the (002) plane, while SEM revealed aggregated morphologies across the film surface. EDS mapping verified the successful incorporation of Al and Ni dopants, and optical results indicated that Al doping slightly increased the band gap compared to pure ZnO, whereas secondary Ni doping reduced it. PL spectra showed a clear evolution of defect-related emissions, where Al doping suppressed the green band, whereas Ni incorporation restored. These defect states played a key role in enhancing charge separation and improving photocatalytic performance. The photocatalytic activity of the films was evaluated versus organic dyes under sunlight irradiation. Pure ZnO exhibited a degradation efficiency of 65 % for MB within 120 min, which decreased to 45 % for Al:ZnO but significantly improved to ∼91 % for the dual (Al–Ni) doped sample, identified as optimal composition. The superior performance of the co-doped films is ascribed to the synergistic effects of Al and Ni in enhancing charge separation and suppressing recombination. In addition to their remarkable photocatalytic performance, the obtained ZnO layers exhibited favorable optical and structural properties, suggesting their potential for optoelectronic applications. Despite the extensive development of various photocatalytic materials, ZnO remains a low-cost and effective semiconductor whose usefulness continues to be validated till now.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116321"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145972810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exceptional pyroelectric performances in infrared detectors employing NKBT-KNb lead-free ceramics","authors":"S. Gouthamsri ,&nbsp;M. Dhamodhara Naidu ,&nbsp;Madala Suguna ,&nbsp;R. Santhosh Kumar ,&nbsp;P.V. Prasanna Kumar ,&nbsp;M. Gnana Kiran ,&nbsp;A.V. Padmavathi ,&nbsp;Simhadri Raju Juvvala ,&nbsp;Kollapudi Sreenivasulu","doi":"10.1016/j.ssc.2025.116304","DOIUrl":"10.1016/j.ssc.2025.116304","url":null,"abstract":"<div><div>Infrared imaging, detection, alarm systems, and advancements in smart home technologies are among the lesser-known applications of infrared detectors made from lead-free ceramics. However, a key challenge in improving the performance of ceramics based on sodium bismuth titanate (NBT) is the trade-off between their relatively high depolarization temperature (T_d) (<em>ferroelectric to antiferroelectric</em>) and large room-temperature pyroelectric coefficient (<em>p</em>). To address this issue, potassium niobate (KNb) has been incorporated into sodium potassium bismuth titanate (NKBT) ceramics, where it forms a solid solution. This modification breaks the spatial inversion symmetry of the NKBT ceramics and enhances the hybridization between Bi-O, ultimately inducing ferroelectric distortion and leading to increased polarization. Additionally, the incorporation of KNb improves the overall stability of the <span><math><mrow><mrow><mo>(</mo><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow><mo>)</mo></mrow><msub><mrow><mi>N</mi><mi>a</mi></mrow><mn>0.25</mn></msub><msub><mi>K</mi><mn>0.25</mn></msub><msub><mrow><mi>B</mi><mi>i</mi></mrow><mn>0.5</mn></msub><mi>T</mi><mi>i</mi><mspace></mspace><msub><mi>O</mi><mn>3</mn></msub><mo>−</mo><mi>x</mi><mi>K</mi><mi>N</mi><mi>b</mi><msub><mi>O</mi><mn>3</mn></msub><mo>:</mo><mrow><mo>(</mo><mrow><mi>x</mi><mo>=</mo><mn>0.15</mn><mspace></mspace><mo>&amp;</mo><mspace></mspace><mi>x</mi><mo>=</mo><mn>0.20</mn></mrow><mo>)</mo></mrow></mrow></math></span> ceramics and contributes to the close packing of the structure, thereby maintaining the high depolarization temperature. For the <span><math><mrow><mrow><mo>(</mo><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow><mo>)</mo></mrow><mi>N</mi><mi>K</mi><mi>B</mi><mi>T</mi><mo>−</mo><mi>x</mi><mi>K</mi><mi>N</mi><mi>b</mi></mrow></math></span> ceramics, the room-temperature pyroelectric coefficient increases significantly with KNb content, rising from 3.42 × 10⁻⁴ C m⁻² K⁻¹ for <em>x</em> = 0.15 to 16.28 × 10⁻⁴ C m⁻² K⁻¹ for <em>x</em> = 0.20, while maintaining a high depolarization temperature of 219 °C. The ceramic with <span><math><mrow><mo>(</mo><mrow><mspace></mspace><mi>x</mi><mo>=</mo><mn>0.20</mn></mrow><mo>)</mo></mrow></math></span> also demonstrates exceptional figures of merit (FOMs) for pyroelectric performance, including F_<em>i</em> = 15.54 × 10⁻¹⁰ mV⁻¹, F<em>v</em> = 11.53 × 10⁻² m² C⁻¹, and F_<em>d</em> = 39.83 μPa^−1/2. These excellent pyroelectric properties and FOM values suggest that these lead free systems are promising candidates for the development of high-performance, lead-free pyroelectric infrared detectors.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"409 ","pages":"Article 116304"},"PeriodicalIF":2.4,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145972967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}