2005 IEEE Conference on Electron Devices and Solid-State Circuits最新文献_第2页

A Simple Model for Channel Noise of Deep Submicron MOSFETs 深亚微米mosfet通道噪声的简单模型

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635269

Z. Lu, Y. Ye

引用次数: 1

Fabrication of Optical Waveguide using Silicon Oxynitride Prepared by Thermal Oxidation of Silicon Rich Silicon Nitride 利用富硅氮化硅热氧化制备的氮化硅制备光波导

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635310

C. Wong, H. Wong, M. Chan, C. Kok, H. Chan

引用次数: 2

A mechanism of increase in the on-current and offcurrent due to a slightly smaller spacer in state-of- the-art p-channel MOS transistors during manufacturing 在最先进的p沟道MOS晶体管的制造过程中，由于稍小的间隔而增加通断电流的机制

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635392

W. Lau, C. Eng, K.M. Tee, S. Siah, D. Vigar, Y.T. Kim, M. Lal, M. Bhat, L. Chan

引用次数: 0

A Low-Energy Asynchronous FFT/IFFT Processor for Hearing Aid Applications 助听器用低功耗异步FFT/IFFT处理器

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635385

Kwen-Siong Chong, B. Gwee, J.S. Chang

引用次数: 5

Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications 3.1-10.6 GHz超宽带系统中硅基射频电感温度和衬底效应的宽带建模

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635202

Yo‐Sheng Lin, Hsiao-Bin Liang, Hung-Wei Chiu, K. Liu, Hsin-Hong Wu, Shey-Shi Lu, Mou‐shiung Lin

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引用次数: 1

On-Chip Voltage Down Converter with Precision CMOS Current Source for VLSI Chip 用于VLSI芯片的精密CMOS电流源片上降压变换器

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635285

Q. Zhou, M. Yu, Y. Ye

引用次数: 2

Metal Gate/High-K Dielectric Stack on Si Cap/Ultra-Thin Pure Ge epi/Si Substrate 金属栅极/硅帽上的高k介电堆/超薄纯锗外电/硅衬底

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635217

C. C. Yeo, M. Lee, C. Liu, K.J. Choi, T. Lee, B. Cho

引用次数: 0

Subthreshold Behavior of Undoped DG MOSFETs 未掺杂DG mosfet的亚阈值行为

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635210

F. J. Garcla-Satnchez, A. Ortiz-Conde, J. Muci

引用次数: 10

Investigation of MOS-NDR Voltage Controlled Ring Oscillator Fabricated by CMOS Process CMOS工艺制造MOS-NDR压控环形振荡器的研究

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635405

K. Gan, Dong-Shong Liang, Chung-Chih Hsiao, Cher-Shiung Tsai, Y. Chen

引用次数: 7

A CMOS-Compatible WORM Memory for Low-Cost Non-Volatile Memory Applications 用于低成本非易失性存储器应用的cmos兼容WORM存储器

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI: 10.1109/EDSSC.2005.1635276

R. Barsatan, T. Y. Man, M. Chan

引用次数: 2