金属栅极/硅帽上的高k介电堆/超薄纯锗外电/硅衬底

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635217

C. C. Yeo, M. Lee, C. Liu, K.J. Choi, T. Lee, B. Cho

{"title":"金属栅极/硅帽上的高k介电堆/超薄纯锗外电/硅衬底","authors":"C. C. Yeo, M. Lee, C. Liu, K.J. Choi, T. Lee, B. Cho","doi":"10.1109/EDSSC.2005.1635217","DOIUrl":null,"url":null,"abstract":"Metal gate/High-K stack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Metal Gate/High-K Dielectric Stack on Si Cap/Ultra-Thin Pure Ge epi/Si Substrate\",\"authors\":\"C. C. Yeo, M. Lee, C. Liu, K.J. Choi, T. Lee, B. Cho\",\"doi\":\"10.1109/EDSSC.2005.1635217\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal gate/High-K stack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635217\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用超薄硅(Si/Ge/Si衬底)封顶，对超薄Ge外溢沟道上的金属栅/高k堆叠cmosfet进行了评价。在低场下，NMOSFET表现出增强的迁移率，而pMOSFET表现出下降的峰值迁移率，只有在高场下才有增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Metal Gate/High-K Dielectric Stack on Si Cap/Ultra-Thin Pure Ge epi/Si Substrate

Metal gate/High-K stack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

自引率

0.00%

发文量