A Simple Model for Channel Noise of Deep Submicron MOSFETs

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635269

Z. Lu, Y. Ye

引用次数: 1

Abstract

A simple analytical model of MOSFETs channel noise is presented by considering short-channel effect of deep submicron MOSFETs, such as mobility degradation, channel length modulation. The model is explicit functions of MOSFETs geometry and biasing conditions, and hence is useful for circuit design purposes. Simulating results derived by using different channel noise model are compared and discussed.

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深亚微米mosfet通道噪声的简单模型

考虑深亚微米mosfet的迁移率退化、通道长度调制等短通道效应，给出了mosfet通道噪声的简单解析模型。该模型是mosfet几何和偏置条件的显式函数，因此对电路设计很有用。对不同信道噪声模型的仿真结果进行了比较和讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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