Metal Gate/High-K Dielectric Stack on Si Cap/Ultra-Thin Pure Ge epi/Si Substrate

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635217

C. C. Yeo, M. Lee, C. Liu, K.J. Choi, T. Lee, B. Cho

引用次数: 0

Abstract

Metal gate/High-K stack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.

查看原文本刊更多论文

金属栅极/硅帽上的高k介电堆/超薄纯锗外电/硅衬底

采用超薄硅(Si/Ge/Si衬底)封顶，对超薄Ge外溢沟道上的金属栅/高k堆叠cmosfet进行了评价。在低场下，NMOSFET表现出增强的迁移率，而pMOSFET表现出下降的峰值迁移率，只有在高场下才有增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

自引率

0.00%

发文量