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InGaAlP/GaAs visible light emitting laser diodes InGaAlP/GaAs可见光发射激光二极管
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689860
Y. Uematsu
{"title":"InGaAlP/GaAs visible light emitting laser diodes","authors":"Y. Uematsu","doi":"10.1109/LEOS.1988.689860","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689860","url":null,"abstract":"","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125450509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role Of Ion-implantation Induced Damage And Surface States In The Response Of Gallium Arsenide Picosecond Photoconductive Switches 离子注入诱导损伤和表面态在砷化镓皮秒光导开关响应中的作用
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689791
D.D. Smith, J. Knudsen, R. Bowman, S. Moss, M. H. Herman
{"title":"Role Of Ion-implantation Induced Damage And Surface States In The Response Of Gallium Arsenide Picosecond Photoconductive Switches","authors":"D.D. Smith, J. Knudsen, R. Bowman, S. Moss, M. H. Herman","doi":"10.1109/LEOS.1988.689791","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689791","url":null,"abstract":"We have measured the temporal response and the photocurrent-voltage characteristics of picosecond photoconductive switches fabricated on microelectronic grade GaAs. Ion-implantation induced amorphization has been used to modify the linearityof responseof theseoptoelectronic switches.The nature of the induced defects were probed by using Raman Spectroscopy and electron-beam induced electroreflectance measurements. The linearity of response is critically dependent upon the natureof the semiconductor region under the metallic contacts. The role of surface-pinned states in the response and longer lived intermediate states is examined.","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"94 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115832479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blue And Ultraviolet Emission From Frequency Doubled Diode Lasers 倍频二极管激光器的蓝色和紫外线发射
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689863
T. Taniuchi, K. Yamamoto, G. Tohmon
{"title":"Blue And Ultraviolet Emission From Frequency Doubled Diode Lasers","authors":"T. Taniuchi, K. Yamamoto, G. Tohmon","doi":"10.1109/LEOS.1988.689863","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689863","url":null,"abstract":"Blue and Ultraviolet Emission from Frequency Doubled Diode Lasers T Taniuchi, K. Yamamoto, and G. Tohmon, Matsushita Electric Industrial Co., Ltd., Osaka, Japan. Blue and ultraviolet emission from a frequency doubled diode laser is reported. The frequency doubling device is a highly efficient proton-exchanged LiNbOs waveguide, capable of 0.39-0.43 emission cw and picosecond pulse generation. This promises to be an attractive means of short wavelength generation from semiconductor diode lasers. Structure for SHG","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132189885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Gain 10.6-micron Free-electron Laser Amplifier 高增益10.6微米自由电子激光放大器
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689849
J.L. Miller, F. Chambers, Y. P. Chong, J. Edighoffer, T. Orzechowski, D. Prosnitz, E. Scharlemann, K. Halbach
{"title":"High Gain 10.6-micron Free-electron Laser Amplifier","authors":"J.L. Miller, F. Chambers, Y. P. Chong, J. Edighoffer, T. Orzechowski, D. Prosnitz, E. Scharlemann, K. Halbach","doi":"10.1109/LEOS.1988.689849","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689849","url":null,"abstract":"A 10.6-micron wavelength free-electron laser (FEL) amplifier has been operated using a 45-MeV, 600-A electron beam from the Advanced Test Accelerator (ATA) and a 15.36-meter long electromagnetic wiggler. The peak small signal power gain was 27 dB (500). Gain guiding was observed to confine the amplified laser beam. + Permanent address: TRW, Incorporated, One Space Park, Redondo Beach, CA. Performed jointly under the auspices of the U.S. DOE by LLNL under W-7405-ENG-48 and for the DOD under SDIOISDC-ATC MlPR","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134006095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Integrated Optical Output-grating-coupler Sensor 集成光输出-光栅-耦合器传感器
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689832
W. Lukosz, V. Briguet, R. Zeller
{"title":"Integrated Optical Output-grating-coupler Sensor","authors":"W. Lukosz, V. Briguet, R. Zeller","doi":"10.1109/LEOS.1988.689832","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689832","url":null,"abstract":"RECIPROCITT GUTLI NE -INPUT COUPLER OUTPUT W W L E R RECIPROCITY BETWEEN INPUT AND OUTPUT GRATING COUPLERS . O U T W T VERSUS INPUT COUPLERS AS SENSORS . OUTPUT COUPLER SENSOR WITH No MOVING PARTS: RESOLUTION. DYNAMIC RANGE. EXPERIMENTAL SET-UP . OIPCOATED SI02-T102 WAVEGUIDES WITH EMBOSSED SURFACE RELIEF GRATINGS . S E N S I T I V I T I E S OF THE SENSOR: 1) AS A DIFFERENTIAL REFRACTOMETER. AND 2) FOR ADSORPTION-DESORPTION OF MOLECULES . SELECTIVITY AND (BI0)CHEMICAL SENSORS . PRELIMINARY RESULTS","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131798759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Effect Of Varying The Input Polarization On An External Cavity Controlled Ensemble Of Five Diode Lasers 改变输入偏振对五二极管激光器外腔控制系综的影响
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689885
L. Pang, C. Corcoran, R. Rediker
{"title":"The Effect Of Varying The Input Polarization On An External Cavity Controlled Ensemble Of Five Diode Lasers","authors":"L. Pang, C. Corcoran, R. Rediker","doi":"10.1109/LEOS.1988.689885","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689885","url":null,"abstract":"Results are presented for an external-cavity laser with five gain-elements controlled to operate as a coherent ensemble by a spatial filter. Experiments show that the laser operates either in a symmetric or antisymmetric mode. The effect of varying a single element’s polarization on the ensemble’s output polarization has been investigated and is explained.","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130756379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Free-space Optical Interconnects For A One Kilobit RAM Chip 用于1kb RAM芯片的自由空间光互连
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689750
M. Feldman, C. Guest, S. Esener, S.H. Lee, S. Krishnakumar, A. Johnston, R. Hartmayer
{"title":"Free-space Optical Interconnects For A One Kilobit RAM Chip","authors":"M. Feldman, C. Guest, S. Esener, S.H. Lee, S. Krishnakumar, A. Johnston, R. Hartmayer","doi":"10.1109/LEOS.1988.689750","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689750","url":null,"abstract":"Free-Space Optical Interconnects for a One Kilobit RAM Chip M.R. Feldman, C.C. Guest, S.C. Esener, S.H. Lee and S . Krishnakumar, University of California, San Diego, La Jolla, CA. A.R. Johnston and R. Hartmayer, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA. Ademonstration system for free-space optical interconnects using a one kilobit RAM chip with integrated optical detectors, a semiconductor laser source, and a computer generated holographic optical element has been assembled and tested. Optical inputs onto the chip were used as row address signals to read data from the chip.","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132173650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 10-GHz High-performance Ultraviolet Photodetector 一种10 ghz高性能紫外光电探测器
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689789
S.F. Scares, B. Mullins, S. Brueck, C. Schaus
{"title":"A 10-GHz High-performance Ultraviolet Photodetector","authors":"S.F. Scares, B. Mullins, S. Brueck, C. Schaus","doi":"10.1109/LEOS.1988.689789","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689789","url":null,"abstract":"","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132711820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semiconductor Multiple Quantum Well (MOW) Devices For Optoelectronics 半导体多量子阱(MOW)光电子器件
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689768
T. Wood
{"title":"Semiconductor Multiple Quantum Well (MOW) Devices For Optoelectronics","authors":"T. Wood","doi":"10.1109/LEOS.1988.689768","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689768","url":null,"abstract":"Semiconductor Multiple Quantum Well (MQW) Devices for Optoelectronics T.H. Wood, AT&T Bell Laboratories, Holmdel, NJ. Because the electroabsorption effect in GaAslAIGaAs MQWs is approximately 50 times larger than that in bulk GaAs, high performance optical modulators can be made which operate at a wavelength of 0.8 pm. Recently, similar results have been achieved in InGaAs/lnP MQWs; high contrast and high-speed devices have been made at 1.5 pm.","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124626334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficiency Of Energy Transfer Between Cr/sup 3+/and Tm/sup 3+/ In Scandium And Aluminum Garnets Cr/sup 3+/与Tm/sup 3+/在钪铝石榴石中的能量传递效率
Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI: 10.1109/LEOS.1988.689844
G. Quarles, L. Esterowitz, A. Rosenbaum, G. Rosenblatt
{"title":"Efficiency Of Energy Transfer Between Cr/sup 3+/and Tm/sup 3+/ In Scandium And Aluminum Garnets","authors":"G. Quarles, L. Esterowitz, A. Rosenbaum, G. Rosenblatt","doi":"10.1109/LEOS.1988.689844","DOIUrl":"https://doi.org/10.1109/LEOS.1988.689844","url":null,"abstract":"I(t) = A exp[-t/r] T = 1 M K r. = I 7 Ins p ( C r 1 ' ) = 2 5x10'\" tom/cc p('l'rn\")=R OxIOm i m s l w Studies of transfer efficiences for Cr3+ to Tm3+ in YAG, YSAG, and YSGG are reported. There is essentially no efficiency reduction in YAG when the Cr3+ concentration is decreased to 1%, which reduces thermal loading effects. The optimum Tm3+ concentration is above 4%. In sharp contrast to Cr:Nd systems, more efficient transfer is obtained in YAG rather than the scandium garnets.","PeriodicalId":428080,"journal":{"name":"Conference Proceedings LEOS Lasers and Electro-Optics Society","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128270345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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