半导体多量子阱(MOW)光电子器件

Conference Proceedings LEOS Lasers and Electro-Optics Society Pub Date : 1988-11-02 DOI:10.1109/LEOS.1988.689768

T. Wood

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摘要

用于光电子学的半导体多量子阱(MQW)器件T.H. Wood, AT&T贝尔实验室，新泽西州Holmdel。由于GaAslAIGaAs mqw中的电吸收效应大约是体GaAs的50倍，因此可以制作出工作波长为0.8 pm的高性能光调制器。最近，在InGaAs/lnP mqw中也取得了类似的结果;高对比度和高速设备已经在下午1点半制成。

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Semiconductor Multiple Quantum Well (MOW) Devices For Optoelectronics

Semiconductor Multiple Quantum Well (MQW) Devices for Optoelectronics T.H. Wood, AT&T Bell Laboratories, Holmdel, NJ. Because the electroabsorption effect in GaAslAIGaAs MQWs is approximately 50 times larger than that in bulk GaAs, high performance optical modulators can be made which operate at a wavelength of 0.8 pm. Recently, similar results have been achieved in InGaAs/lnP MQWs; high contrast and high-speed devices have been made at 1.5 pm.

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Conference Proceedings LEOS Lasers and Electro-Optics Society

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