D.D. Smith, J. Knudsen, R. Bowman, S. Moss, M. H. Herman
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Role Of Ion-implantation Induced Damage And Surface States In The Response Of Gallium Arsenide Picosecond Photoconductive Switches
We have measured the temporal response and the photocurrent-voltage characteristics of picosecond photoconductive switches fabricated on microelectronic grade GaAs. Ion-implantation induced amorphization has been used to modify the linearityof responseof theseoptoelectronic switches.The nature of the induced defects were probed by using Raman Spectroscopy and electron-beam induced electroreflectance measurements. The linearity of response is critically dependent upon the natureof the semiconductor region under the metallic contacts. The role of surface-pinned states in the response and longer lived intermediate states is examined.
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