Semiconductor Multiple Quantum Well (MOW) Devices For Optoelectronics

Abstract

Semiconductor Multiple Quantum Well (MQW) Devices for Optoelectronics T.H. Wood, AT&T Bell Laboratories, Holmdel, NJ. Because the electroabsorption effect in GaAslAIGaAs MQWs is approximately 50 times larger than that in bulk GaAs, high performance optical modulators can be made which operate at a wavelength of 0.8 pm. Recently, similar results have been achieved in InGaAs/lnP MQWs; high contrast and high-speed devices have been made at 1.5 pm.