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TEM Study of Rhodium Catalysts with Manganese Promoter 锰助剂铑催化剂的透射电镜研究
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2010-10-21 DOI: 10.5210/JUR.V4I1.7480
M. Merritt, Y. Zhao, R. Klie
{"title":"TEM Study of Rhodium Catalysts with Manganese Promoter","authors":"M. Merritt, Y. Zhao, R. Klie","doi":"10.5210/JUR.V4I1.7480","DOIUrl":"https://doi.org/10.5210/JUR.V4I1.7480","url":null,"abstract":"The focus of this research is on studying the effects of a manganese promoter on rhodium particles for the purposes of ethanol catalysation from syngas. Through TEM imaging, the particle size has been studied both before and after reduction with and without a manganese promoter. For pure rhodium on silica, the average particle size before reduction was 3.1 ± 0.8 nm and 3.1 ± 0.8 nm after reduction. For rhodium with a manganese promoter on silica, the average particle size before reduction was 2.3 ± 0.5 nm and 2.4 ± 0.7 nm after reduction. These results point to a clear effect of manganese on the particle sizes of rhodium, but an insufficient effect on particle size to fully explain all effects of manganese promotion on rhodium catalysts. Further research will be focusing on using a JEOL-2010F to conduct electron energy loss spectroscopy (EELS) and Z-contrast imaging structural studies.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114713364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microfluidic Bandage for Localized Oxygen-Enhanced Wound Healing 微流控绷带用于局部氧增强伤口愈合
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2010-10-21 DOI: 10.5210/JUR.V4I1.7478
Zameer Merchant, J. Lo, D. Eddington
{"title":"Microfluidic Bandage for Localized Oxygen-Enhanced Wound Healing","authors":"Zameer Merchant, J. Lo, D. Eddington","doi":"10.5210/JUR.V4I1.7478","DOIUrl":"https://doi.org/10.5210/JUR.V4I1.7478","url":null,"abstract":"An oxygen-enhanced, microfluidic bandage was fabricated out of polydimethlysiloxane (PDMS) and contains a 100 μm thick gas-permeable membrane that allows rapid diffusion of oxygen directly to the wound bed. The microfluidic bandage was characterized by measuring the effect of modulating oxygen concentrations, calculating the degree of localization in oxygen delivery when subjected to a non-planar platform, and determining the extent of oxygen penetration below the tissue surface. The concentration of the diffused oxygen (0.02 ± 0.73 to 99.2 ± 4.46%) was shown to rapidly equilibrate (~30 seconds) to the modulating input oxygen concentration (0 to 100%). The device also maintained localized oxygen delivery to a specified area when a non-planar irregularity was introduced. Finally, the extent of oxygen penetration was found to decrease as the thickness of tissue increased (>7% at 0.8 mm thick). These experiments demonstrate that this microfluidic bandage can be a viable tool for oxygen-enhanced wound healing.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132206159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
General Purpose Silicon Trigger Board for the CMS Pixel Read Out Chips CMS像素读出芯片的通用硅触发板
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2010-10-05 DOI: 10.5210/JUR.V4I1.7485
E. Stachura, C. Gerber, R. Horisberger
{"title":"General Purpose Silicon Trigger Board for the CMS Pixel Read Out Chips","authors":"E. Stachura, C. Gerber, R. Horisberger","doi":"10.5210/JUR.V4I1.7485","DOIUrl":"https://doi.org/10.5210/JUR.V4I1.7485","url":null,"abstract":"A semester research project was completed at Eidgenossiche Technische Hochschule Zurich (ETH Zurich) and the Paul Scherrer Institut (PSI) in the spring of 2010. A new kind of trigger based on silicon pixel sensors was developed for the commissioning of the current Compact Muon Solenoid (CMS) pixel detector. Prior to this trigger there was no silicon sensor based trigger that used the same technology as the pixel detector. The current trigger systems involve cumbersome photomultiplier tubes and Nuclear Instrument Module (NIM) crates to process the signals. To improve on these trigger systems it was thought to develop a trigger using pixel technology in the form of a printed circuit board that assimilates the signal processing circuitry. The board worked well, although there were limitations (e.g. crosstalk occurred so copper shielding was needed). A second generation trigger board currently exists. It fixes many of the problems encountered with the first board.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122061049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films 多铁BiFeO3薄膜的温度依赖性电学特性
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2010-10-01 DOI: 10.5210/JUR.V4I1.7483
D. Hitchen, Siddhartha Ghosh
{"title":"Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films","authors":"D. Hitchen, Siddhartha Ghosh","doi":"10.5210/JUR.V4I1.7483","DOIUrl":"https://doi.org/10.5210/JUR.V4I1.7483","url":null,"abstract":"The polarization hysteresis and current leakage characteristics of bismuth ferrite, BiFeO 3  (BFO) thin films deposited by pulsed laser deposition was measured while varying the temperature from 80 - 300 K in increments of 10 K, to determine the feasibility of BFO for capacitive applications in memory storage devices. Data is compared to the performance of prototypic ferroelectric barium strontium titanate, Ba x Sr 1-x TiO 3  (BST) under similar conditions. Finding contacts on the BFO samples that exhibited acceptable dielectric properties was challenging; and once identified, the polarization characteristics between them varied greatly. However, the non-uniformity among the contact points within each sample suggests that either the samples were defective (by contamination or growth process), or that the deposition process of the contacts may have undermined the functionality of the devices. Subjected to increasing temperatures, BFO's polarization improved, and though its polarizability was shown to be inferior to BST, the dielectric loss was less.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115628965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of flow through P[NIPAM/MMA] copolymer coated glass capillary tubes, and glass copolymer adhesion improvements with hydrofluoric acid etching 研究P[NIPAM/MMA]共聚物涂覆玻璃毛细管的流动，以及氢氟酸蚀刻改善玻璃共聚物的附着力
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2010-03-01 DOI: 10.5210/JUR.V3I1.7474
R. Wiegmann, Yilei Zhang, A. Yarin
{"title":"Investigation of flow through P[NIPAM/MMA] copolymer coated glass capillary tubes, and glass copolymer adhesion improvements with hydrofluoric acid etching","authors":"R. Wiegmann, Yilei Zhang, A. Yarin","doi":"10.5210/JUR.V3I1.7474","DOIUrl":"https://doi.org/10.5210/JUR.V3I1.7474","url":null,"abstract":"This study aims to display the retention of the thermo-responsive properties of the copolymer poly(N-isopropyl acrylamide-methyl methacrylate) [P(NIPAM/MMA)] when coated on the inner diameter of a glass capillary tube, and to prove the stability of the copolymer coating when subjected to pressure driven fluid flow. The study shows that the fluid flow through such a capillary tube follows Hagen-Poiseuille flow. Furthermore, this study examines methods of improving polymer adhesion to glass by hydrofluoric acid etching. Such a coated tube system is applicable in drug delivery, self cleaning tubes, and microelectromechanical systems (MEMS).","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131722528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5 用Ni C5H5 2和Fe C5H4C4H9 C5H5化学气相沉积镍铁氧体
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2010-02-01 DOI: 10.5210/JUR.V3I1.7473
R. Walker, M. Singh, Yi Yang, C. Takoudis
{"title":"Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5","authors":"R. Walker, M. Singh, Yi Yang, C. Takoudis","doi":"10.5210/JUR.V3I1.7473","DOIUrl":"https://doi.org/10.5210/JUR.V3I1.7473","url":null,"abstract":"Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe 2 O 3 ) on silicon substrates. Precursors chosen for this process were nickelocene,Ni(C 5 H 5 ) 2  and n-butylferrocene, Fe(C 5 H 4 C 4 H 9 )(C 5 H 5 ), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe 2 O 4 ). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe 2 O 4 , but were composed of NiO and Fe 2 O 3  in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133280538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of ferroelastic behavior and microstructure in polycrystalline LaCoO3 using Transmission Electron Microscopy 用透射电镜研究多晶LaCoO3的铁弹性行为和微观结构
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2009-11-24 DOI: 10.5210/JUR.V3I1.7470
S. Kell, M. Tanase, R. Klie
{"title":"Study of ferroelastic behavior and microstructure in polycrystalline LaCoO3 using Transmission Electron Microscopy","authors":"S. Kell, M. Tanase, R. Klie","doi":"10.5210/JUR.V3I1.7470","DOIUrl":"https://doi.org/10.5210/JUR.V3I1.7470","url":null,"abstract":"LaCoO 3  is a ferroelastic perovskite-type oxide. It has been shown to undergo creep at room temperature. LaCoO 3  responds to stress by changing its domain structure, resulting in formation of spontaneous strain. The microstructure of a sample of polycrystalline LaCoO 3  with history of stress was investigated using Transmission Electron Microscopy (TEM). It was compared to an unstrained sample to determine what changes are produced. TEM analysis has shown an increase in defect density as well as the appearance of atomic scale ordering. The causes of the observed ordering and their relation to ferroelastic behavior are explored.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121609145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interaction of Hydrogen on a Lanthanum hexaboride 111 Surface 氢在六硼化镧111表面的相互作用
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2009-11-18 DOI: 10.5210/JUR.V3I1.7472
Jenna Cameli, A. Tillekaratne, M. Trenary
{"title":"Interaction of Hydrogen on a Lanthanum hexaboride 111 Surface","authors":"Jenna Cameli, A. Tillekaratne, M. Trenary","doi":"10.5210/JUR.V3I1.7472","DOIUrl":"https://doi.org/10.5210/JUR.V3I1.7472","url":null,"abstract":"In order to sustain society's current level of energy consumption and prevent irreversible climate degradation due to the greenhouse effect an alternative energy carrier is required. The aim of this experiment was to determine the conditions under which a lanthanum hexaboride (LaB 6 ) surface would form boron-hydrogen (B-H) bonds when exposed to hydrogen. Reflection absorption infrared spectroscopy (RAIRS) was used to confirm formation of bonds and X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) were used to characterize the surface. Upon completion of the experiment no B-H bonds were found to form under the conditions tested. However, it is believed that the bond formation may have been impeded by tungsten contamination of the surface or may have been due to the instability of the B-H bond. A lower temperature could be required for their formation.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127662789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic Layer Deposited Al2O3 Film on Si 100 as Buffer Layer for HfxTi1-xO2 Deposition 在Si 100上原子层沉积Al2O3薄膜作为HfxTi1-xO2沉积的缓冲层
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2009-11-18 DOI: 10.5210/JUR.V3I1.7471
A. L. Kueltzo, Q. Tao, M. Singh, G. Jursich, C. Takoudis
{"title":"Atomic Layer Deposited Al2O3 Film on Si 100 as Buffer Layer for HfxTi1-xO2 Deposition","authors":"A. L. Kueltzo, Q. Tao, M. Singh, G. Jursich, C. Takoudis","doi":"10.5210/JUR.V3I1.7471","DOIUrl":"https://doi.org/10.5210/JUR.V3I1.7471","url":null,"abstract":"Ultra-thin films of Al 2 O 3  were deposited on Si(100) by atomic layer deposition (ALD) using tris(diethylamino)aluminium (TDEAA) with water vapor as the oxidizer. It is planned to deposit nano-laminated composite films of Hf x Ti 1-x O 2  on top of this ultra-thin Al 2 O 3  buffer layer using tetrakis(diethylamino)titanium (TDEAT) and tetrakis(diethylamino)hafnium (TDEAH). The introduction of the Al 2 O 3  buffer layer will improve the interfacial quality and help to retain amorphous structure of Hf x Ti 1-x O 2 /Al 2 O 3 /Si. Discussion of the addition of the new precursor, TDEAA, to the existing ALD system is discussed along with the optimization of process parameters for ALD of Al 2 O 3  films. An Al 2 O 3  film growth rate of 1 cycle was achieved in the ALD temperature window of 200-275 o  C.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121909105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Approaches for the Estimation of Pulse Wave Velocity in the Spinal Canal 椎管内脉搏波速度的估计方法
The Journal of Undergraduate Research at the University of Illinois at Chicago Pub Date : 2009-01-26 DOI: 10.5210/JUR.V2I1.7466
E. Lemaster, S. Lee, N. Alperin
{"title":"Approaches for the Estimation of Pulse Wave Velocity in the Spinal Canal","authors":"E. Lemaster, S. Lee, N. Alperin","doi":"10.5210/JUR.V2I1.7466","DOIUrl":"https://doi.org/10.5210/JUR.V2I1.7466","url":null,"abstract":"This pilot study describes approaches for the estimation of the pulse wave velocity (PWV) of cerebrospinal fluid (CSF) in the upper spinal canal. The movement of CSF was non-invasively measured using phase-contrast magnetic resonance imaging (PCMRI) technique. Two main approaches were used to calculate PWV. The approaches relied on different types of images: sagittal and axial images. For the method using axial images, the PWV was calculated using four different time delays. This preliminary investigation indicated that the most reliable method used axial images and the waveforms' onset times to calculate PWV. CSF's PWV may be of importance in a condition known as Chiari Malformation (CM), a brain disorder in which the cerebral tonsils herniate into the spinal canal. The present study investigated the PWV of CSF in five healthy volunteers compared to that of five symptomatic CM patients.","PeriodicalId":426348,"journal":{"name":"The Journal of Undergraduate Research at the University of Illinois at Chicago","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115938875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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