Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5

R. Walker, M. Singh, Yi Yang, C. Takoudis
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引用次数: 2

Abstract

Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe 2 O 3 ) on silicon substrates. Precursors chosen for this process were nickelocene,Ni(C 5 H 5 ) 2  and n-butylferrocene, Fe(C 5 H 4 C 4 H 9 )(C 5 H 5 ), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe 2 O 4 ). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe 2 O 4 , but were composed of NiO and Fe 2 O 3  in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.
用Ni C5H5 2和Fe C5H4C4H9 C5H5化学气相沉积镍铁氧体
采用化学气相沉积技术在硅衬底上沉积氧化镍(NiO)和氧化铁(fe2o3)薄膜。该工艺的前驱体为二茂镍Ni(c5h5) 2和正丁基二茂铁Fe(c5h4 c4h9)(c5h5),它们在低压化学气相沉积系统中被氧气氧化。在沉积单个金属氧化物之后,将这两种前驱体一起使用,目的是沉积镍铁氧体薄膜(nife2o4)。分别进行了共沉积和循环沉积,并用x射线光电子能谱对所得薄膜进行了分析。本研究发现所得薄膜不含nio2o4,而是由NiO和fe2o3以不同的比例组成。建议通过改变实验中的各种参数来改变该比值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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