Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)最新文献_第6页

A low voltage CMOS implementation of a linear cellular neural network for image processing applications 用于图像处理应用的线性细胞神经网络的低电压CMOS实现

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004011

F. Lobato-Lopez, J. L. Finol

引用次数: 0

Performance comparison of convolutional and block turbo codes for WLAN applications WLAN应用中卷积码与分组turbo码的性能比较

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004115

J. Martins, A. Giulietti, M. Strum

引用次数: 9

The statistical properties of light generated by circular-grating distributed Bragg reflector laser with integrated outcoupler 研究了集成外耦圆光栅分布布拉格反射激光器的光统计特性

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004040

R. Paszkiewicz, A. Tyszka-Zawadzka, P. Szczepański

引用次数: 0

Modeling and simulation of optoelectronic interconnect systems using a single kernel simulator 光电互连系统的单内核模拟器建模与仿真

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004046

T. Ytterdal, T. Fjeldly, S. Baier, J. Deng, M. Shur

引用次数: 2

Current-mode universal biquad 电流模式通用biquad

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004108

D. Biolek, J. Cajka, K. Vrba

引用次数: 1

System for extensive characterization of MOS and SOI MOS structures by means of charge pumping 系统广泛表征MOS和SOI MOS结构的手段，电荷泵

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004090

S. Szostak, L. Lukasiak, A. Jakubowski

引用次数: 0

Reuse issues on the verification of embedded MCU cores 嵌入式MCU内核验证中的复用问题

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004000

Narcizo Sabbatini, Antonio Mauricio Brochi, Tulio Ibanez Nunes

引用次数: 3

Comparison of NMOS and CMOS TFT inverters fabricated by LPCVD and SPC techniques at low temperature (<600/spl deg/C) 低温(<600/spl℃)下LPCVD和SPC制备NMOS和CMOS TFT逆变器的比较

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004028

G. Gautier, C. E. Viana, S. Crand, R. Rogel, N. Morimoto, O. Bonnaud

引用次数: 1

A practical approach for the accurate lifetime estimation of device degradation in deep sub-micron CMOS technologies 一种在深亚微米CMOS技术中精确估计器件退化寿命的实用方法

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004063

F. Guarín, G. La Rosa, Z.J. Yang, S. Rauch

{"title":"A practical approach for the accurate lifetime estimation of device degradation in deep sub-micron CMOS technologies","authors":"F. Guarín, G. La Rosa, Z.J. Yang, S. Rauch","doi":"10.1109/ICCDCS.2002.1004063","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004063","url":null,"abstract":"Practical studies of the influence of various reliability mechanisms on the lifetime estimation and the impact of widely accepted assumptions to the accuracy of the reliability degradation predictions are discussed in detail. The inaccuracies of the \"industry standard\" approach to reliability stressing as well as the methodology utilized for the prediction of lifetimes in advanced CMOS technologies are addressed. A review of measurement practices and stress conditions is also given. Methodologies for improving the accuracy of reliability predictions have been developed and validated with experimental results for devices with an L/sub EFF/ range spanning well into the deep sub-micron regime, and with stress conditions covering a wide V/sub GS/ and V/sub DS/ range. The impact of NFET and PFET reliability degradation on circuit performance has been characterized using ring oscillator stressing. The traditional view that only NFET hot carrier degradation contributes to circuit performance degradation has been shown not to be applicable for advanced sub-micron CMOS technologies. The need of a more comprehensive reliability evaluation for realistic lifetime projections is described.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115557435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

CMOS analog sine function generator using lateral-PNP bipolar transistors 采用横向pnp双极晶体管的CMOS模拟正弦函数发生器

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI: 10.1109/ICCDCS.2002.1004017

M. Pessatti, C. dos Reis Filho

引用次数: 5