System for extensive characterization of MOS and SOI MOS structures by means of charge pumping

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004090

S. Szostak, L. Lukasiak, A. Jakubowski

引用次数: 0

Abstract

The performance of MOS devices is to a large extent determined by the quality of the Si-SiO/sub 2/ interface. This paper presents a new system for characterization of MOS and MOS SOI structures by means of charge pumping. MOSFETs and SOI MOSFETs are used as test structures.

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系统广泛表征MOS和SOI MOS结构的手段，电荷泵

MOS器件的性能在很大程度上取决于Si-SiO/sub - 2/接口的质量。本文提出了一种用电荷泵送的方法表征MOS和MOS SOI结构的新系统。mosfet和SOI mosfet用作测试结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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