Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.最新文献_第9页

Investigation of cation environments in polycrystalline and single crystal PMN-PT using electron spectroscopy 用电子能谱法研究多晶和单晶PMN-PT中的阳离子环境

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195965

S. McBride, A. Bell

引用次数: 1

Leakage current properties of Ba/sub 0.7/Sr/sub 0.3/TiO/sub 3/ thin films depending on the film thickness Ba/sub 0.7/Sr/sub 0.3/TiO/sub 3/薄膜的漏电流特性随薄膜厚度的变化

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195908

C. Kugeler, R. Liedtke, R. Waser

引用次数: 0

Fabrication of multilayer ring transformer 多层环形变压器的研制

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195928

Nga-yan Wong, H. Chan, C. Choy

{"title":"Fabrication of multilayer ring transformer","authors":"Nga-yan Wong, H. Chan, C. Choy","doi":"10.1109/ISAF.2002.1195928","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195928","url":null,"abstract":"Residual porosity is one of the most common defects found in multilayer ceramic structures. The pores are created in the binder burnout process when solvents and binders are released from the ceramic green body. Without a well-controlled compaction technique, defects between sheets in the stacked body often exist, leading to delamination problems. Also, it is difficult to fabricate a ring-shaped multilayer structure without cracks, especially near the center hole. Due to the difference in thermal expansion coefficients of the mould and the ceramic green body, large internal stress is often induced in the ceramic green body during hot pressing and cracks are initiated during sintering. In this work, the fabrication process of a lead zirconate titanate (PZT) ring-shaped multilayer to be used as a transformer is described. By a specially designed mould and adjustment of the hot pressing conditions, the internal stress induced during hot pressing has been reduced effectively. In particular, the hot pressing process is divided into two steps in order to reduce the clamping of the inner shaft by the ceramic green body. Therefore, the inner shaft can be released easily and the delamination problem can be improved. Also the binder burnout process has been designed carefully by studying the TGA profile. Scanning electron microscopy is used to study the cross-sectional area of the transformer. It is found that the resulting multilayer transformer did not have cracks, pores and delamination. The performance of the transformer will be measured and reported in later work.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130869213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Fabrication of MFIS diodes using BLT (Bi,La)/sub 4/Ti/sub 3/O/sub 12/ and LaAlO/sub 3/ buffer layers 利用BLT (Bi,La)/亚4/Ti/亚3/O/亚12/和LaAlO/亚3/缓冲层制备MFIS二极管

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195895

B. Park, H. Ishiwara

引用次数: 1

A model for switching in ferroelectric thin films by nucleation-growth of domains with three-dimensional polarization 三维极化区成核生长的铁电薄膜开关模型

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195875

D. Ricinschi, Y. Ishibashi, M. Iwata, L. Mitoseriu, M. Okuyama

引用次数: 2

Piezoelectric functionally gradient material for bending devices based on Ba(Ti,Sn)O/sub 3/ ceramics 基于Ba(Ti,Sn)O/sub 3/陶瓷的弯曲器件压电功能梯度材料

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195943

R. Steinhausen, A. Kouvatov, H. Beige, H. Langhammer, H. Abicht

{"title":"Piezoelectric functionally gradient material for bending devices based on Ba(Ti,Sn)O/sub 3/ ceramics","authors":"R. Steinhausen, A. Kouvatov, H. Beige, H. Langhammer, H. Abicht","doi":"10.1109/ISAF.2002.1195943","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195943","url":null,"abstract":"Functionally gradient materials (FGM) with one dimensional gradient of the piezoelectric activity can be used for bending actuators. For this, monolithic ceramics consisting of N layers with different chemical properties are prepared. The gradient of the chemical properties has to be transformed into a gradient of the piezoelectric properties by a poling process. In this work the poling and bending behavior of such FGM devices was investigated and described by analytical approximations. Monolithic samples with 2, 3 or 4 layers of BaTi/sub 1-x/Sn/sub x/O/sub 3/ (BTS) ceramics with different amount of tin (0.075 /spl les/ x /spl les/ 0.15) were prepared. The poling behavior was characterized by measurements of the dielectric virgin loops P(E). The bending deflection of poled devices depends on the amount of tin in the layers and slightly increases with increasing number of layers. Additionally, conventional glued bending devices with the same number of layers and a corresponding chemical composition were investigated. The experimental data were compared with the results of analytical approximations. Here, measured properties of single BTS ceramics with the appropriate amount of tin were used for the calculation of hysteresis loops and bending deflection of the layered systems. A good correspondence between the model structures and the theory was found. However, slight differences for the monolithic ceramics were obtained. We suppose that this is due to the existence of interface layers with indefinite material properties between neighboring layers.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":" 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113951593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Direct growth of orthorhombic potassium niobate (KNbO/sub 3/) crystal from an aqueous solution 在水溶液中直接生长正交铌酸钾(KNbO/ sub3 /)晶体

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195957

R. Komatsu, K. Adachi, K. Ikeda

引用次数: 0

Crystalline properties of ferroelectric-relaxor PMN-PT thin films by pulsed laser deposition 脉冲激光沉积铁电弛豫PMN-PT薄膜的结晶特性

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195888

S.K. Singh, P. Bhattacharya, P. Thomas, S. Palmer

{"title":"Crystalline properties of ferroelectric-relaxor PMN-PT thin films by pulsed laser deposition","authors":"S.K. Singh, P. Bhattacharya, P. Thomas, S. Palmer","doi":"10.1109/ISAF.2002.1195888","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195888","url":null,"abstract":"The dielectric and crystalline properties of ferroelectric thin films of 0.9[Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/]-0.1PbTiO/sub 3/ (.9PMN-.1PT) have been investigated. Ceramic targets of 0.9PMN-0.1PT with and without excess PbO were used for thin film deposition and were grown on substrates of SrTiO/sub 3/ LaAlO/sub 3/, MgO, and Pt/TiO/sub 2//SiO/sub 2//Si using pulsed laser ablation deposition. It was shown that the phase purity of the films was dependent on the film thickness. Furthermore we have shown that as the thickness of the films increases from 100nm to 600nm there is a progressive decline in the local strain and hence an improvement in the local crystallinity of the films. The dielectric constant for our films (3900 at 10KHz) is higher than previous reports on 0.9PMN-0.1PT films. We have also shown that there is considerable benefit in changing lower electrodes. The XRD shows that the films are highly c-axis orientated as grown on YBa/sub 2/Cu/sub 3/O/sub 7/ (001) or SrRuO/sub 3/ (001) and (111) orientated on Pt(111) lower electrodes. The sizes of the grains depend upon the nucleation density and the rate of growth onto the lower electrode used. Slower growth rates lead to excess of lead in the film at the grain boundaries while accelerated growth rates lead to higher porosity's. It was shown that annealing for 1 hour at 600/spl deg/C reduces porosity and improves surface quality.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123541765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Studies of proton irradiated 0.9PMN-0.1PT/P(VDF-TrFE) 0-3 composites 质子辐照0.9PMN-0.1PT/P(VDF-TrFE) 0-3复合材料的研究

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195863

K. H. Lam, H. Chan, C. Choy, E. Luo, I. Wilson

引用次数: 0

Piezoelectric transformer for 30 W output AC-DC converters 用于输出功率为30w的交直流变换器的压电变压器

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI: 10.1109/ISAF.2002.1195940

M. Yamamoto, Y. Sasaki, T. Inoue, A. Ochi, S. Hamamura

引用次数: 2