利用BLT (Bi,La)/亚4/Ti/亚3/O/亚12/和LaAlO/亚3/缓冲层制备MFIS二极管

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195895

B. Park, H. Ishiwara

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引用次数: 1

摘要

采用Bi/sub 3.35/La/sub 0.75/Ti/sub 3/O/sub 12/ (BLT)薄膜和在Si(100)衬底上形成的铝酸镧(LaAlO/sub 3/)缓冲层制备了MFIS(金属-铁电-绝缘体-半导体)二极管。采用分子束外延法制备LaAlO/ sub3 /薄膜。薄膜沉积后，在快速热退火(RTA)炉中以800/spl度/C进行非原位N/sub - 2/退火1 min。利用溶胶-凝胶技术在LaAlO/sub - 3//Si结构上沉积了150 nm的BLT薄膜。该薄膜在0/ sub / 2/环境下750/spl℃退火10 min后的记忆窗口约为2.7 V。在500 kV/cm的电场下，泄漏电流密度约为10/sup -6/ A/cm/sup 2/。从保持测量中还发现，在滞后回路中电压偏置的电容值在超过3小时内没有变化。

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Fabrication of MFIS diodes using BLT (Bi,La)/sub 4/Ti/sub 3/O/sub 12/ and LaAlO/sub 3/ buffer layers

We fabricated MFIS (metal-ferroelectric-insulator-semiconductor) diodes with Bi/sub 3.35/La/sub 0.75/Ti/sub 3/O/sub 12/ (BLT) films and lanthanum aluminate (LaAlO/sub 3/) buffer layers formed on Si(100) substrates. LaAlO/sub 3/ films were prepared by an MBE (molecular beam epitaxy) method. After the film deposition, they were subjected to ex site N/sub 2/ annealing in a rapid thermal annealing (RTA) furnace at 800/spl deg/C for 1 min. BLT films (150 nm) were deposited on these LaAlO/sub 3//Si structures using a sol-gel technique. The memory window of this BLT film annealed in O/sub 2/ ambient at 750/spl deg/C for 10 min was about 2.7 V. It was found that the leakage current density was on the order of 10/sup -6/ A/cm/sup 2/ at an electric field of 500 kV/cm. It was also found from the retention measurement that the capacitance values biased at a voltage in the hysteresis loop did not change for more than 3 hours.

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来源期刊

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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