发布求助
文献互助 智能选刊 最新文献

2010 International Symposium on Next Generation Electronics最新文献

筛选
英文 中文
A near-field telemetry device with close-loop endocardial stimulation for a pacemaker 用于心脏起搏器的近场遥测装置，具有闭环心内膜刺激
2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-17 DOI: 10.1109/ISNE.2010.5669136
Shuenn-Yuh Lee, Yu-Cheng Su, Chih-Jen Cheng
{"title":"A near-field telemetry device with close-loop endocardial stimulation for a pacemaker","authors":"Shuenn-Yuh Lee, Yu-Cheng Su, Chih-Jen Cheng","doi":"10.1109/ISNE.2010.5669136","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669136","url":null,"abstract":"In this paper, a wireless telemetry using the near-field coupling technique with round-wire coils for an implanted pacemaker is presented. The proposed system possesses an external powering amplifier and an internal bidirectional microstimulator. Even with a low induced voltage, all the circuitries associated with the implantable stimulator are operated normally by the coupling power interface, which includes an efficient rectifier, one fully-integrated regulator, and a charge pump. To acquire cardiac signal, a low-voltage and low-power monitoring analog front end (MAFE) performs the functions of immediate threshold detection and data conversion. In addition, pacing circuits, which are responsible for stimulating heart tissue, are employed to overcome the huge voltage difference between the pulse generator (PG) and its digital-to-analog (D/A) controller. The chip is fabricated by TSMC with 0.35 µm CMOS technology to manifest the monitoring and pacing function under inductively powering communication. With a model utilizing lead and heart tissue, a-5-V pulse at a stimulating while only consuming a power of 31.5 µW.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116053427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors 单源无水HfxZr1−x(NO34)前驱体化学气相沉积Hf0.7Zr0.3O2薄膜的性能
2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-17 DOI: 10.1109/ISNE.2010.5669199
Wen-Qi Zhang, Liuying Huang, Aidong Li, Q. Shao, Di Wu
{"title":"Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors","authors":"Wen-Qi Zhang, Liuying Huang, Aidong Li, Q. Shao, Di Wu","doi":"10.1109/ISNE.2010.5669199","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669199","url":null,"abstract":"Hafnium-based dielectrics have been extensively investigated as a possible replacement for SiO<inf>2</inf>. Anhydrous Hf/Zr mixed-metal nitrate precursor Hf<inf>x</inf>Zr<inf>1−x</inf>(NO<inf>3</inf><inf>4</inf> (HZN) was successfully synthesized and hafnium zirconate (Hf<inf>x</inf>Zr<inf>1−</inf>O<inf>2</inf>) thin films were prepared by the chemical vapor deposition (CVD) technique from this precursor. The basal dielectric properties of Hf<inf>x</inf>Zr<inf>1−</inf>O<inf>2</inf> films were studied, and C-V curves with negligible hysteresis are achieved.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126723282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple process of thin-film transistor using the trench-oxide layer for improving 1T-DRAM performance 一种利用沟槽氧化层提高1T-DRAM性能的薄膜晶体管的简单工艺
2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-17 DOI: 10.1109/ISNE.2010.5669149
Hsien-Nan Chiu, Jyi-Tsong Lin, Y. Eng, Tzu-Feng Chang, Cheng-Hsin Chen
{"title":"A simple process of thin-film transistor using the trench-oxide layer for improving 1T-DRAM performance","authors":"Hsien-Nan Chiu, Jyi-Tsong Lin, Y. Eng, Tzu-Feng Chang, Cheng-Hsin Chen","doi":"10.1109/ISNE.2010.5669149","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669149","url":null,"abstract":"In this paper, we propose a simple trench-oxide thin-film transistor (TO TFT) process for 1T-DRAM applications. Our proposed TO TFT structure has several novel features as follows: 1. The buried oxide and the isolation oxide are carried out simultaneously in order to achieve a goal of simple process. 2. The trench design is used to improve both the sensing current windows (∼ 72%) and the retention time (∼ 50%). 3. The thermal stability is drastically improved by its naturally formed source/drain tie. The above mentioned features help our proposed device structure to demonstrate the desired characteristics that are better than that of a conventional TFT. Additionally, the thermal instability is drastically improved which is good for long-term device operation.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127140500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LS-based joint estimation of carrier frequency offset and IQ imbalance in OFDM systems 基于ls的OFDM系统载波频偏和IQ不平衡联合估计
2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-17 DOI: 10.1109/ISNE.2010.5669203
Jheng-Ru Liang, Chih-Hung Kuo
{"title":"LS-based joint estimation of carrier frequency offset and IQ imbalance in OFDM systems","authors":"Jheng-Ru Liang, Chih-Hung Kuo","doi":"10.1109/ISNE.2010.5669203","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669203","url":null,"abstract":"In this paper, two non-ideal effects, carrier frequency offset (CFO) and IQ imbalance, are jointly compensated for an orthogonal frequency division multiplexing (OFDM) system. Based on the two identical sequences in the preamble, a LS-based method is proposed to estimate both CFO and IQ imbalance. This method has much lower complexity than the state-of-art expectation-maximization (EM) approach. Simulation results show that the proposed algorithm is robust for a wide SNR range, and performs better in the estimation of the IQ imbalance.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125861204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Design of wide-IF-bandwidth down-conversion mixer for 60-GHz WPAN / 3–10 GHz UWB group-1 coexistence system application 60 GHz WPAN / 3-10 GHz UWB group-1共存系统的宽频下变频混频器设计
2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-17 DOI: 10.1109/ISNE.2010.5669184
M. Tsai, Pen-Li You, T. Tsai, Kai-Li Huang, Tzuen-Hsi Huang
{"title":"Design of wide-IF-bandwidth down-conversion mixer for 60-GHz WPAN / 3–10 GHz UWB group-1 coexistence system application","authors":"M. Tsai, Pen-Li You, T. Tsai, Kai-Li Huang, Tzuen-Hsi Huang","doi":"10.1109/ISNE.2010.5669184","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669184","url":null,"abstract":"This paper presents a wide intermediate-frequency (IF) bandwidth down-conversion double-balanced Gilbert-cell mixer design in a 0.13-µm CMOS process. The load stage of the mixer is implemented by an LC tank with switched capacitors to complete three selectable sub-bands to cover the desired wide IF band. Both the RF and LO ports are integrated with Marchand baluns for single-phase input consideration. The mixer converts millimeter-wave ISM band of 57.3–59.2 GHz down to the first UWB sub-band of 3.3–5.2 GHz (total 1.9 GHz bandwidth) with a fixed local frequency of 54 GHz. The measured conversion gain is better than −3 dB over the desired IF bandwidth. The levels of input 1-dB compression point (IP1dB) are −3, −3, and −1 dBm correspond to the center frequencies of 3.8, 4.2, and 4.6 GHz, respectively. The LO-to-RF isolation and LO-to-IF isolation are better than 43 dB and 35 dB, respectively.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125983807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment 臭氧水氧化处理双δ掺杂AlGaAs/InGaAs MOS-pHEMTs
2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-01 DOI: 10.1109/ISNE.2010.5669168
C. S. Lee, S. H. Yang, J. Hung, W. Chien, M. Lin, Y. Liao, L. Tseng, W. Hsu, C. S. Ho, B. Chou, Y. Lai
{"title":"Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment","authors":"C. S. Lee, S. H. Yang, J. Hung, W. Chien, M. Lin, Y. Liao, L. Tseng, W. Hsu, C. S. Ho, B. Chou, Y. Lai","doi":"10.1109/ISNE.2010.5669168","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669168","url":null,"abstract":"This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of − 43.1 (−7.9) V, respectively","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117187462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.5V continuous-tracking current sensing circuit with high accuracy for DC-DC buck converter 用于DC-DC降压变换器的1.5V高精度连续跟踪电流传感电路
2010 International Symposium on Next Generation Electronics Pub Date : 2010-11-01 DOI: 10.1109/ISNE.2010.5669176
S. Chung, R. Weng
{"title":"1.5V continuous-tracking current sensing circuit with high accuracy for DC-DC buck converter","authors":"S. Chung, R. Weng","doi":"10.1109/ISNE.2010.5669176","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669176","url":null,"abstract":"A low voltage current sensing circuit is presented in this paper. The proposed current sensing circuit performs continuous-tracking with high accuracy over 98% is achieved. The current sensing circuit is implemented with a standard 0.18µm CMOS process at 1.5V supply voltage. The power efficiency obtains 89% over the maximum load current of 540mA. Wide operation frequency range from 400kHz to 25MHz speeds up the tracking time. Off-chip inductors and capacitors can effectively decrease the voltage ripple. Area efficiency brings the benefit of low cost to the proposed current sensing circuit.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130590009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of gate capping and SOI thickness with compressive stresses on partially depleted MOSFETs 压应力下栅极封盖和SOI厚度对部分耗尽mosfet的影响
2010 International Symposium on Next Generation Electronics Pub Date : 2010-11-01 DOI: 10.1109/ISNE.2010.5669151
W. Chang, Jian-an Lin, Ming-Feng Li
{"title":"Impact of gate capping and SOI thickness with compressive stresses on partially depleted MOSFETs","authors":"W. Chang, Jian-an Lin, Ming-Feng Li","doi":"10.1109/ISNE.2010.5669151","DOIUrl":"https://doi.org/10.1109/ISNE.2010.5669151","url":null,"abstract":"Silicon nitride gate capping by contact etch-stop layer (CESL) was used in this study to induce high and low tensile and compressive stresses on 50-, 70-, and 90-nm thick silicon-oninsulator (SOI) n-/p-MOSFETs. The devices with thicker SOI show a higher interface state, particularly the highly strained devices, although they exhibit higher mobility. The carrier mobilities of different CESL configurations are sensitive to the tSOI effect, but the carrier mobilities of different tSOI are less sensitive to external compressive stress compared with those of CESL configurations. The CESL-induced compressive devices show higher piezoresistive coefficients than the tensile CESL devices, yielding an external stress of up to about 45.7 MPa for both longitudinal and transverse configurations. This probably results from nonlinear stress-strain relations on the CESLinduced strained channel.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124152458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信