Wen-Qi Zhang, Liuying Huang, Aidong Li, Q. Shao, Di Wu
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Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors
Hafnium-based dielectrics have been extensively investigated as a possible replacement for SiO2. Anhydrous Hf/Zr mixed-metal nitrate precursor HfxZr1−x(NO34 (HZN) was successfully synthesized and hafnium zirconate (HfxZr1−O2) thin films were prepared by the chemical vapor deposition (CVD) technique from this precursor. The basal dielectric properties of HfxZr1−O2 films were studied, and C-V curves with negligible hysteresis are achieved.
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