臭氧水氧化处理双δ掺杂AlGaAs/InGaAs MOS-pHEMTs

2010 International Symposium on Next Generation Electronics Pub Date : 2010-12-01 DOI:10.1109/ISNE.2010.5669168

C. S. Lee, S. H. Yang, J. Hung, W. Chien, M. Lin, Y. Liao, L. Tseng, W. Hsu, C. S. Ho, B. Chou, Y. Lai

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引用次数: 0

摘要

本文研究了臭氧水氧化处理下AlGaAs/InGaAs金属氧化物半导体伪晶高电子迁移率晶体管(MOS-pHEMT)的器件性能。实验结果表明，所研究的MOS-pHEMT在相同外延结构上，与未经氧化处理的传统pHEMT相比，具有优越的器件特性。所研究的MOS(传统)-pHEMT的功率增加效率(P.A.E.)提高了39.6%(36)%，单位增益截止频率(fT)提高了19.3 (16.8)GHz，最大振荡频率(fmax)提高了30.6 (26.7)GHz，最小噪声系数(NFmin)提高了1.21 (1.48)dB，双端栅极-漏极击穿电压(BVGD)分别达到了- 43.1 (- 7.9)V

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Double δ-doped AlGaAs/InGaAs MOS-pHEMTs by using ozone water oxidation treatment

This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied MOS (conventional)-pHEMT exhibits improved power-added-efficiency (P.A.E.) of 39.6 (36) %, unity-gain cut-off frequency (fT) of 19.3 (16.8) GHz, maximum oscillation frequency (fmax) of 30.6 (26.7) GHz, minimum noise figure (NFmin) of 1.21 (1.48) dB, and excellent two-terminal gate-drain breakdown voltage (BVGD) of − 43.1 (−7.9) V, respectively

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2010 International Symposium on Next Generation Electronics

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