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2019 8th International Symposium on Next Generation Electronics (ISNE)最新文献

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Chat Box: Two-way Schemed Communication Device for Speech and Hearing Impairment 聊天框:为语言和听力障碍设计的双向交流设备
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896577
R. C. Tabiongan
{"title":"Chat Box: Two-way Schemed Communication Device for Speech and Hearing Impairment","authors":"R. C. Tabiongan","doi":"10.1109/ISNE.2019.8896577","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896577","url":null,"abstract":"Distress caused by a verbal barrier which hinders the subjects from being able to communicate freely and easily to sign language incapable individuals and vice-versa is the focal point of concern this project aims to resolve. This communication device consists of two major parts: (1) a surface consists of two Bare Conductive Touch Boards preloaded with the twelve phrases and words with its corresponding display of hand sign images converted to its English translation and (2) two TFT Touch Shields mounted in Arduino Mega 2560 Rev3 respectively, preloaded with the standard English alphabet and American Sign Language symbols. The impaired subjects have two options either to tap the desired electrode pads on the Touch Board or to communicate using the TFT Touch Shield like a multi-touch texting option. On the other hand, the normal user communicates only via TFT Touch Shield. Chat Box is a communication device that bridges the language gap of a deaf, mute and deaf-mute, sign language capable individuals to those of normal, non-sign language people. The Chat Box indeed is an innovative piece of technology that has a potential of altering the inconvenient manner of conversing with the speech and hearing impaired community. The third-party programs and software proved the authenticity of the device by verifying its accuracy, consistency, speed (timing and delay) and responsiveness in terms of transmitting data from one LCD shield to the other, as well as the rate of the instantaneous audio produced once the electrode pads were tapped.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121903324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Self-adaption Power Switch Circuit For Battery Supplyed NFC Chip 电池供电NFC芯片的自适应电源开关电路
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896460
Mingyang Gong, Zhenglin Liu
{"title":"A Self-adaption Power Switch Circuit For Battery Supplyed NFC Chip","authors":"Mingyang Gong, Zhenglin Liu","doi":"10.1109/ISNE.2019.8896460","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896460","url":null,"abstract":"NFC chip can capture power from antenna when it is in magnetic field. At the same time, NFC chip may also be powered by battery at IoT application, and it needs to shutdown battery supply to save battery energy, which makes it complex for power switch architecture. This paper presents an architecture and circuit design for NFC chip to switch power between battery and magnetic field inducing energy. An offchip 1 uF capacitor is used to filter the magnetic field power swing in wireless communication time. This circuit also collects the magnetic field inducing energy and output a current as large as 5mA (3.3V) for other IoT chip or charging battery.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130875185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs AlGaN/GaN mishemt阈值电压的正移位抑制
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896561
Meihua Liu, Kuan‐Chang Chang, Xinnan Lin, Lei Li, Yufeng Jin
{"title":"Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs","authors":"Meihua Liu, Kuan‐Chang Chang, Xinnan Lin, Lei Li, Yufeng Jin","doi":"10.1109/ISNE.2019.8896561","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896561","url":null,"abstract":"In this paper, we reported a supercritical treatment technology to suppress the positive shift in threshold voltage. After treatment, threshold voltage shift ($triangle$ Vth) under forward gate bias stress decreased from 4.05V to 0.15V, gate leakage current was reduced from 10-9mA/mm to 10-11mA/mm. It was suggested that nitrogen ions could modify interface state traps with a broad distribution of trapping, leading to suppressed gate leakage current and threshold voltage drifts.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116154308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and viscoelastic measurement of cancer cells in epithelial-mesenchymal transition process on a microfluidic device 微流控装置上癌细胞上皮-间质转化过程的电和粘弹性测量
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896395
Yajun Yang, Bing Chen, Shaokang Meng, Shuaiyi Li, Xiaonan Yang
{"title":"Electrical and viscoelastic measurement of cancer cells in epithelial-mesenchymal transition process on a microfluidic device","authors":"Yajun Yang, Bing Chen, Shaokang Meng, Shuaiyi Li, Xiaonan Yang","doi":"10.1109/ISNE.2019.8896395","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896395","url":null,"abstract":"Microfluidic devices and electrical techniques based on electrical impedance and viscoelastic changes can be used in the measurement of cancer cells in the epithelial-mesenchymal transition (EMT) process. Electrical impedance and transmission time were investigated when a single CRC cell passed the measurable tiny channel which was designed with width smaller than the average diameter of a single cell. The experimental data showed that the electrical impedance characteristics and viscoelasticity of the cells were changed after PMA induction. This property is expected to become a new biomarker for studying EMT.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127308009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Modified LDMOS-SCR with High Holding Voltage for high voltage ESD Protection 一种用于高压ESD保护的高保持电压改性ldmos -可控硅
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896592
Wenqiang Song, Zhiwei Liu, J. Liou
{"title":"A Modified LDMOS-SCR with High Holding Voltage for high voltage ESD Protection","authors":"Wenqiang Song, Zhiwei Liu, J. Liou","doi":"10.1109/ISNE.2019.8896592","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896592","url":null,"abstract":"A modified lateral DMOS-SCR with high holding voltage for electrostatic discharge (ESD) protection applications has been proposed in this paper. The proposed MLDMOS-SCR possesses a lower trigger voltage as well as a higher holding voltage, which is very suitable for 18V/20V ESD applications. The operation mechanism of MLDMOS-SCR device is discussed in detail, and the effect of floating P+ region on the MLDMOS-SCR’s I-V characteristics is analyzed by TCAD simulation as well.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129443023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
First principles study of Zn doped cubic BN crystal 锌掺杂立方BN晶体的第一性原理研究
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896476
Changyou Yu, Fang Wang, Yuhuai Liu
{"title":"First principles study of Zn doped cubic BN crystal","authors":"Changyou Yu, Fang Wang, Yuhuai Liu","doi":"10.1109/ISNE.2019.8896476","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896476","url":null,"abstract":"The electronic and optical properties of Zn-doped sphalerite BN crystals were investigated by first-principles calculations based on density functional theory. The results show that the intrinsic c-BN is an indirect bandgap semiconductor and exhibits a certain degree of P-type traits. The incorporation of Zn reduces the band gap of BN, but introduces more carrier density near the Fermi level of the valence band. Compared with pure BN, the real spectrum of the dielectric function of Zn-doped BN is less stable in the low-energy region, but there is still a range of available light transmission, while the imaginary part has less variation and has a similar absorption range. It is shown that Zn-doped BN can be used for light-emitting elements in a certain spectral range.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120899276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance Comparison of Localization Algorithm Based on the N-hop Anchors for Wireless Sensor Networks 基于n跳锚点的无线传感器网络定位算法性能比较
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896653
Yanhe Zhang, Yingqiang Ding
{"title":"Performance Comparison of Localization Algorithm Based on the N-hop Anchors for Wireless Sensor Networks","authors":"Yanhe Zhang, Yingqiang Ding","doi":"10.1109/ISNE.2019.8896653","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896653","url":null,"abstract":"In order to overcome the shortcomings of existing location algorithms, which can’t make full use of the location information of multi-hop anchor nodes, and obtain the ideal result of node localization, a new range-free location algorithm for wireless sensor networks is proposed in this paper—n-hop anchors’ connection relationship-based localization (NHCRL) algorithms. The key point of this algorithm is that to use anchor nodes with different hop values as geometric constraints of unknown node positions, and then to reduce their location areas continuously to achieve the purpose of accurate positioning. The simulation results show that under the same conditions, compared with the traditional location algorithm, NHCRL has higher location accuracy.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"26 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121042462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Dual-Mode Ridge Waveguide Dual-Band Filter 紧凑型双模脊波导双带滤波器
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896616
Ya Xie, Fulong Chen, Yan Cao
{"title":"Compact Dual-Mode Ridge Waveguide Dual-Band Filter","authors":"Ya Xie, Fulong Chen, Yan Cao","doi":"10.1109/ISNE.2019.8896616","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896616","url":null,"abstract":"A novel dual-mode ridge waveguide structure is proposed to design dual-band bandpass filter in this paper. This new configuration achieves to realize two orthogonal resonant modes which allows for independent control of the two resonant frequencies. In addition, a transmission zero is introduced in the guard-bands improving the filter selectivity, while keeping a simple and compact inline topology.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122701737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ECG-Signal Classification Using SVM with Multi-feature 基于多特征支持向量机的心电图信号分类
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896430
Zhaoyang Ge, Zhihua Zhu, Panpan Feng, Shuo Zhang, Jing Wang, Bing Zhou
{"title":"ECG-Signal Classification Using SVM with Multi-feature","authors":"Zhaoyang Ge, Zhihua Zhu, Panpan Feng, Shuo Zhang, Jing Wang, Bing Zhou","doi":"10.1109/ISNE.2019.8896430","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896430","url":null,"abstract":"Automated bioelectric signal analysis has an important application in the wisdom medical care. In this work, we focus on ECG-signal and address a novel approach for cardiac arrhythmia diseases classification. We designed a novel analysis framework which extract different feature transformations from ECG signals. And we trained the SVM model for multi-feature to obtain the prediction. Finally, we tested our approach on the public database of MIT-BIH arrhythmia. And the results of experiments on the database demonstrate our model has better classification performance than other approaches.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115537109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Software Defined Radio Hardware Design on ZYNQ for Signal Processing System 基于ZYNQ的信号处理系统软定义无线电硬件设计
2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI: 10.1109/ISNE.2019.8896380
Zhaojun Yang, Weibo Xiong, Yuxian Zhao
{"title":"Software Defined Radio Hardware Design on ZYNQ for Signal Processing System","authors":"Zhaojun Yang, Weibo Xiong, Yuxian Zhao","doi":"10.1109/ISNE.2019.8896380","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896380","url":null,"abstract":"This paper introduces a design scheme of a software defined radio (SDR) processing platform based on ZYNQ7000 and AD9371. Supports signal acquisition and processing in the 300MHz-6000MHz tunable range with up to 100 MHz bandwidths. The system was implemented on a 160mm*100mm board, greatly reducing the number of chips and PCB layout space. The transceiver performance of the system was tested and verified, especially spurious suppression and IQ balance.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121598339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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