锌掺杂立方BN晶体的第一性原理研究

Changyou Yu, Fang Wang, Yuhuai Liu
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引用次数: 1

摘要

采用基于密度泛函理论的第一性原理计算方法研究了锌掺杂闪锌矿BN晶体的电子和光学性质。结果表明,本征c-BN是一种间接带隙半导体,具有一定程度的p型特性。Zn的掺入减小了BN的带隙,但在价带费米能级附近引入了更多的载流子密度。与纯BN相比,掺锌BN的介电函数实谱在低能区稳定性较差,但仍有一定的可透过光范围,而虚部变化较小,吸收范围相似。结果表明,掺杂锌的氮化硼可以在一定的光谱范围内用作发光元素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First principles study of Zn doped cubic BN crystal
The electronic and optical properties of Zn-doped sphalerite BN crystals were investigated by first-principles calculations based on density functional theory. The results show that the intrinsic c-BN is an indirect bandgap semiconductor and exhibits a certain degree of P-type traits. The incorporation of Zn reduces the band gap of BN, but introduces more carrier density near the Fermi level of the valence band. Compared with pure BN, the real spectrum of the dielectric function of Zn-doped BN is less stable in the low-energy region, but there is still a range of available light transmission, while the imaginary part has less variation and has a similar absorption range. It is shown that Zn-doped BN can be used for light-emitting elements in a certain spectral range.
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