A Modified LDMOS-SCR with High Holding Voltage for high voltage ESD Protection

Abstract

A modified lateral DMOS-SCR with high holding voltage for electrostatic discharge (ESD) protection applications has been proposed in this paper. The proposed MLDMOS-SCR possesses a lower trigger voltage as well as a higher holding voltage, which is very suitable for 18V/20V ESD applications. The operation mechanism of MLDMOS-SCR device is discussed in detail, and the effect of floating P+ region on the MLDMOS-SCR’s I-V characteristics is analyzed by TCAD simulation as well.