CLEO/Europe Conference on Lasers and Electro-Optics最新文献_第7页

White-Light Continuum Spectral Interferometry for Dispersion Characteristics Measurements in Anisotropic Crystals 白光连续光谱干涉法测量各向异性晶体色散特性

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719260

H. Delbarre, C. Przygodzki, D. Boucher

引用次数: 0

Laser Welding of Magnetic Materials 磁性材料的激光焊接

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.718876

H. Seat, I. Watson

{"title":"Laser Welding of Magnetic Materials","authors":"H. Seat, I. Watson","doi":"10.1109/CLEOE.1998.718876","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.718876","url":null,"abstract":"Industrial sectors with interest in welding magnetic materials include the aerospace, electrical and defence industries [1]. The effects of CO2 laser welding and high temperatures (i.e. above the Curie temperature) on the magnetism of ferromagnetic materials were investigated. A 1.2 kW MFKP CO2 laser was used to weld the magnetic material at a constant power of 1 kW in the CW mode, for different welding translation velocities. Figure 1 shows a schematic of the magnetic field measurement system. This consisted of two orthogonal translation tables and an RS miniature Hall effect Sensor (HES), attached to an outlying platform from the larger translation table. The x-y motion was controlled via a microprocessor so that the HES was translated over the entire surface of the welded magnets (2 Alcomax magnets: 8% Al, 11.5% Ni, 21% Co, 4% Cu, Fe). The signal from the HES was signal conditioned and fed into a data acquisition card located in the PC. The magnetic field strength over the laser weld and surface of the specimen was measured before welding, immediately after welding and 3 days after welding. Figure 2 shows the spatial differences in the magnetic properties of the sample immediately after welding and Figure 3 the corresponding data 3 days after welding. The magnetisation of the weld pool and HAZ was reduced immediately after welding; 3 days later, during which the samples were isolated, magnetism recovered over the specimen except in the weld zone where it had been damaged and stayed unrecovered. A high translation velocity maximised the remagnetisation process and reduced the demagnetised zone and HAZ.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131684031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Science and Technology of Organic EL Displays 有机发光二极管的科学与技术

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.718891

A. Hudson

引用次数: 0

Effect of Molecular Sieve on Transient Output-Reduction and Laser Parameters in DC Discharged/Room Temperature Operated FAF CO Laser 分子筛对直流放电/室温FAF CO激光器瞬态输出衰减和激光参数的影响

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719506

Y. Kodama, H. Sato

{"title":"Effect of Molecular Sieve on Transient Output-Reduction and Laser Parameters in DC Discharged/Room Temperature Operated FAF CO Laser","authors":"Y. Kodama, H. Sato","doi":"10.1109/CLEOE.1998.719506","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719506","url":null,"abstract":"The output power tends to transiently decrease with discharge time in a dc electrically pumped fast axial-flow (FAF) CO laser. This output reduction is mainly caused by both the temperature rise of gas mixture and deactivation of the excited CO molecule due to its dissociation into CO2 and O2 molecules.1 Especially, the latter seems to be predominant in the room temperature operated FAF CO laser system. The gas temperature rise due to the discharge can be compensated by fast gas-circulation through a heat exchanger along with either ethanol/dry ice coolants (or liquid nitrogen at subroom temperature operation) , whereas the CO2 molecules generated through the discharge process cannot be avoided at room temperature operation, though, it is well trapped with a cold trap of liquid nitrogen. Thus, we shall try to recover the output reduction transiently induced above by adsorbing the generated CO2 molecules by molecular sieve for the room temperature operation together with theoretical explanation. In addition, we shall also examine how the laser parameters such as the small-signal gain γ0.v saturation intensity Is and a measure of partial homogeneity m are influenced with insertion of molecular sieve.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"335 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115228062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Remote Laser-Induced Breakdown Spectroscopy Using a Novel Single-Fibre Arrangement 采用新型单纤维排列的远程激光诱导击穿光谱

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719625

D. Beddows, H. Kondo, G. W. Morris, H. Telle

引用次数: 1

Investigation of Intensity Noise in a Diode-Pumped Tm-Ho:YAG Laser 二极管泵浦Tm-Ho:YAG激光器强度噪声研究

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719594

S. Taccheo, G. Sorbello, S. Longhi, C. Svelto, P. Laporta

引用次数: 4

In Vivo Optical Imaging of the Female Breast 女性乳房的体内光学成像

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.718886

G. W. Hooft, M. B. V. D. Mark, J. Hoogenraad, S. Colak, J. Paasschens, E. S. V. D. Linden

引用次数: 0

Measurement and Calculation of the Critical Pulsewidth for Gain Saturation in Semiconductor Optical Amplifiers 半导体光放大器增益饱和临界脉宽的测量与计算

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719051

P. Borri, J. Mørk, J. M. Hvam, A. Mecozzi

引用次数: 50

Lidar Determination of the Mixing Layer Formation Delay in the Presence of a Fog 激光雷达测定雾存在下混合层形成延迟

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719073

P. Savov, B. Tatarov, B. Kaprielov, I. Kolev

引用次数: 0

Low Temperature Wafer Direct Bonding Between GaInAsP Etch Stop Layer and Gd/sub 3/Ga/sub 5/O/sub 12/ GaInAsP蚀刻停止层与Gd/sub 3/Ga/sub 5/O/sub 12/的低温晶圆直接键合

CLEO/Europe Conference on Lasers and Electro-Optics Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719515

H. Yokoi, T. Mizumoto

{"title":"Low Temperature Wafer Direct Bonding Between GaInAsP Etch Stop Layer and Gd/sub 3/Ga/sub 5/O/sub 12/","authors":"H. Yokoi, T. Mizumoto","doi":"10.1109/CLEOE.1998.719515","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719515","url":null,"abstract":"gamer crystal for the aim of integrating a lher diode and an optical isolator In a precious study, we demonsrated the bonding between InP and several kinds ofgmetr [I] , the latter ofwhich are essential to an optical isolator. Figure 1 shows B laser diode iiitegrated with an uptical isolator by wafa direct banding A GalnAsP etch stop layer ofthe laser diode is prepared for vertical alignment between an active layer of the laser diode and a guiding layer of the optical isolator. The vertical alignment can be achieved by adjusting the thickness of cladding layers The lateral alignment of a waveguide with the laser stripe can be accampliahed by mowntional lithography and etching techniques In this paper, we report the direct bonding between GalnAsP and GdiGasOu [GGG) GGG ss used BS a mbstrate for epitaxial growth of maget ic garnets. Ali wafers were chmically treated. and contacted at roam temperature. The contacted samplas were immediately haded into an anneaiig furnace for the heat treatment at tcmperatures between I10 and 3301'. since magnetic garnets were damaged by heat treatment in H2 ambient st 385'L. 121 A pressure of250 p l c d was applied to the wafers during the h a t t rmment The bonded samples w ~ r e subjected to V ~ O U B dewce fabbrication pracesses, such rn baking, thermal annealing. wet etching and exposure to the plasma discharge. for investigmng the bundine Jurabihty. The bonding betaeen GalnAsP and GCG was achieved d t h the heat treatmm at temperatures between 110 and 3307: The samples bonded by the heat treatment at 110 and 220C rcmvned banded against all the processes The bonding between a terraced l a w diode and GGG was also petiomcd. The GalnAsP etched surface was bonded with C i G by heat treatnient at temperatures between I I O and 22OT. We believe that the low temperature wafer direct bonding is a promising technique for the integration ofa semiconductor laser diode and an optical isolator","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124270229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0