{"title":"Low Temperature Wafer Direct Bonding Between GaInAsP Etch Stop Layer and Gd/sub 3/Ga/sub 5/O/sub 12/","authors":"H. Yokoi, T. Mizumoto","doi":"10.1109/CLEOE.1998.719515","DOIUrl":null,"url":null,"abstract":"gamer crystal for the aim of integrating a lher diode and an optical isolator In a precious study, we demonsrated the bonding between InP and several kinds ofgmetr [I] , the latter ofwhich are essential to an optical isolator. Figure 1 shows B laser diode iiitegrated with an uptical isolator by wafa direct banding A GalnAsP etch stop layer ofthe laser diode is prepared for vertical alignment between an active layer of the laser diode and a guiding layer of the optical isolator. The vertical alignment can be achieved by adjusting the thickness of cladding layers The lateral alignment of a waveguide with the laser stripe can be accampliahed by mowntional lithography and etching techniques In this paper, we report the direct bonding between GalnAsP and GdiGasOu [GGG) GGG ss used BS a mbstrate for epitaxial growth of maget ic garnets. Ali wafers were chmically treated. and contacted at roam temperature. The contacted samplas were immediately haded into an anneaiig furnace for the heat treatment at tcmperatures between I10 and 3301'. since magnetic garnets were damaged by heat treatment in H2 ambient st 385'L. 121 A pressure of250 p l c d was applied to the wafers during the h a t t rmment The bonded samples w ~ r e subjected to V ~ O U B dewce fabbrication pracesses, such rn baking, thermal annealing. wet etching and exposure to the plasma discharge. for investigmng the bundine Jurabihty. The bonding betaeen GalnAsP and GCG was achieved d t h the heat treatmm at temperatures between 110 and 3307: The samples bonded by the heat treatment at 110 and 220C rcmvned banded against all the processes The bonding between a terraced l a w diode and GGG was also petiomcd. The GalnAsP etched surface was bonded with C i G by heat treatnient at temperatures between I I O and 22OT. We believe that the low temperature wafer direct bonding is a promising technique for the integration ofa semiconductor laser diode and an optical isolator","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CLEO/Europe Conference on Lasers and Electro-Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOE.1998.719515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
gamer crystal for the aim of integrating a lher diode and an optical isolator In a precious study, we demonsrated the bonding between InP and several kinds ofgmetr [I] , the latter ofwhich are essential to an optical isolator. Figure 1 shows B laser diode iiitegrated with an uptical isolator by wafa direct banding A GalnAsP etch stop layer ofthe laser diode is prepared for vertical alignment between an active layer of the laser diode and a guiding layer of the optical isolator. The vertical alignment can be achieved by adjusting the thickness of cladding layers The lateral alignment of a waveguide with the laser stripe can be accampliahed by mowntional lithography and etching techniques In this paper, we report the direct bonding between GalnAsP and GdiGasOu [GGG) GGG ss used BS a mbstrate for epitaxial growth of maget ic garnets. Ali wafers were chmically treated. and contacted at roam temperature. The contacted samplas were immediately haded into an anneaiig furnace for the heat treatment at tcmperatures between I10 and 3301'. since magnetic garnets were damaged by heat treatment in H2 ambient st 385'L. 121 A pressure of250 p l c d was applied to the wafers during the h a t t rmment The bonded samples w ~ r e subjected to V ~ O U B dewce fabbrication pracesses, such rn baking, thermal annealing. wet etching and exposure to the plasma discharge. for investigmng the bundine Jurabihty. The bonding betaeen GalnAsP and GCG was achieved d t h the heat treatmm at temperatures between 110 and 3307: The samples bonded by the heat treatment at 110 and 220C rcmvned banded against all the processes The bonding between a terraced l a w diode and GGG was also petiomcd. The GalnAsP etched surface was bonded with C i G by heat treatnient at temperatures between I I O and 22OT. We believe that the low temperature wafer direct bonding is a promising technique for the integration ofa semiconductor laser diode and an optical isolator
在一项宝贵的研究中,我们展示了InP与几种光栅之间的键合[I],后者是光学隔离器所必需的。图1显示了通过wafa直接带带集成的B激光二极管。激光二极管的GalnAsP蚀刻停止层是为激光二极管的有源层和光学隔离器的引导层之间的垂直校准而准备的。通过调整熔覆层厚度可以实现垂直对准,通过动态光刻和蚀刻技术可以实现波导与激光条纹的横向对准。本文报道了GalnAsP与GdiGasOu [GGG] GGG之间的直接键合,使用BS作为磁性石榴石外延生长的基质。阿里晶圆片经过化学处理。在漫游温度下接触。接触后的样品立即放入退火炉,在I10至3301℃之间进行热处理。磁性石榴石在385'L的H2环境中被热处理破坏。在制备过程中,对晶圆施加250p1c / d的压力,结合后的样品进行了V ~ O ~ U ~ B器件的制备工艺,如烘烤、热退火等。湿法蚀刻和暴露于等离子体放电。用于调查自然灾害。在110 ~ 3307℃的温度下进行热处理,得到了GalnAsP和GCG的结合;在110 ~ 220℃的温度下进行热处理,得到的样品在所有的工艺条件下都呈带状。通过热处理,将GalnAsP蚀刻表面与C - i - G键合在i - i - O ~ 22℃之间。我们认为低温晶圆直接键合技术是一种很有前途的半导体激光二极管与光隔离器集成技术