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2007 IEEE International Interconnect Technology Conferencee最新文献

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Materials and processes for high signal propagation performance and reliable 32 nm node BEOL 高信号传播性能和可靠的32纳米节点BEOL的材料和工艺
2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI: 10.1109/IITC.2007.382330
V. Arnal, A. Farcy, M. Aimadeddine, V. Jousseaume, L. Gosset, J. Guillan, M. Assous, L. Favennec, A. Zenasni, T. David, K. Hamioud, L. Chapelon, N. Jourdan, T. Vanypre, T. Mourier, P. Chausse, S. Maitrejean, C. Guedj, J. Torres
{"title":"Materials and processes for high signal propagation performance and reliable 32 nm node BEOL","authors":"V. Arnal, A. Farcy, M. Aimadeddine, V. Jousseaume, L. Gosset, J. Guillan, M. Assous, L. Favennec, A. Zenasni, T. David, K. Hamioud, L. Chapelon, N. Jourdan, T. Vanypre, T. Mourier, P. Chausse, S. Maitrejean, C. Guedj, J. Torres","doi":"10.1109/IITC.2007.382330","DOIUrl":"https://doi.org/10.1109/IITC.2007.382330","url":null,"abstract":"Integrated circuits are more and more impacted by interconnect performance. As size reaches nanometric dimensions, changes in materials aim at performing a reliable and compliant technology with a maximum capability to reduce delay time and power consumption. At the 32 nm node, k value reduction of existing porous SiOCH and optimization of metallization with thin barrier, conformal seed and plating should mitigate RC and offer an improvement compared to current materials of the 45 nm node.","PeriodicalId":403602,"journal":{"name":"2007 IEEE International Interconnect Technology Conferencee","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115682659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Delay, Energy, and Bandwidth Comparisons between Copper, Carbon Nanotube, and Optical Interconnects for Local and Global Wiring Application 本地和全球布线应用中铜、碳纳米管和光互连的延迟、能量和带宽比较
2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI: 10.1109/IITC.2007.382375
Hoyeol Cho, Kyung-Hoae Koo, P. Kapur, K. Saraswat
{"title":"The Delay, Energy, and Bandwidth Comparisons between Copper, Carbon Nanotube, and Optical Interconnects for Local and Global Wiring Application","authors":"Hoyeol Cho, Kyung-Hoae Koo, P. Kapur, K. Saraswat","doi":"10.1109/IITC.2007.382375","DOIUrl":"https://doi.org/10.1109/IITC.2007.382375","url":null,"abstract":"The interconnect bottleneck presents a compelling reason to explore novel interconnect architectures. We compare two promising interconnects: carbon nanotube (CNT) and optical, with traditional Cu/low-K wires. We find that the optical wires yield the lowest latency and the highest bandwidth density. However, in terms of a system's top- down, novel, metric-bandwidth density per latency per power, CNTs can yield comparable performance to optical wires provided a certain mean free path and packing density is achieved. We quantify these technology parameters and also examine the impact of CNT diameter and bundle width on the performance comparison with Cu/low-K.","PeriodicalId":403602,"journal":{"name":"2007 IEEE International Interconnect Technology Conferencee","volume":"31 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130184110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Tera-scale Computing - the Role of interconnects in Volume Compute platforms 太级计算——互连在卷计算平台中的作用
2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI: 10.1109/IITC.2007.382385
J. Bautista
{"title":"Tera-scale Computing - the Role of interconnects in Volume Compute platforms","authors":"J. Bautista","doi":"10.1109/IITC.2007.382385","DOIUrl":"https://doi.org/10.1109/IITC.2007.382385","url":null,"abstract":"Future CPU directions are increasingly emphasizing parallel compute platforms which consequently, depend upon greater core to core communication and generally stress the overall memory and storage interconnect hierarchy to a much greater degree than extrapolations of past platform needs. Performance is critically dependent upon bandwidth/latency but must be moderated with power and cost considerations. Motivation, requirements, and potential solutions are summarized briefly in this paper.","PeriodicalId":403602,"journal":{"name":"2007 IEEE International Interconnect Technology Conferencee","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132502288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Multi-Level Air Gap Integration for 32/22nm nodes using a Spin-on Thermal Degradable Polymer and a SiOC CVD Hard Mask 采用自旋热降解聚合物和SiOC CVD硬掩膜的32/22nm节点多级气隙集成
2007 IEEE International Interconnect Technology Conferencee Pub Date : 2007-06-04 DOI: 10.1109/IITC.2007.382349
R. Daamen, P. Bancken, D. Emur Badaroglu, J. Michelon, V. Nguyen, G. Verheijden, A. Humbert, J. Waeterloos, A. Yang, J. K. Cheng, L. Chen, T. Martens, R. Hoofman
{"title":"Multi-Level Air Gap Integration for 32/22nm nodes using a Spin-on Thermal Degradable Polymer and a SiOC CVD Hard Mask","authors":"R. Daamen, P. Bancken, D. Emur Badaroglu, J. Michelon, V. Nguyen, G. Verheijden, A. Humbert, J. Waeterloos, A. Yang, J. K. Cheng, L. Chen, T. Martens, R. Hoofman","doi":"10.1109/IITC.2007.382349","DOIUrl":"https://doi.org/10.1109/IITC.2007.382349","url":null,"abstract":"In this work, we propose and verify a robust dual damascene air gap architecture, which avoids the increasing complexity and cost normally associated with current multilevel air gap integration. Air gap packaging reliability was also addressed showing promising stud bonding and wire pull test results. Furthermore two solutions are proposed to solve any possible un-landed via issues, including simultaneous air gap formation at multiple metal levels, which could even be used to reduce the thermal budget for the 32/22 nm nodes.","PeriodicalId":403602,"journal":{"name":"2007 IEEE International Interconnect Technology Conferencee","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129632749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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