Organic Electronics最新文献_第8页

The role of fused thiophene and naphthalene diimide (NDI) in shaping the optical and electrical properties of donor-acceptor polymers 熔融噻吩和萘二亚胺（NDI）在形成供体-受体聚合物的光学和电学特性中的作用

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-27 DOI: 10.1016/j.orgel.2024.107058

Klaudia Dang Anh , Paloma L. dos Santos , Mana Saeed , Mujeeb U. Chaudhry , Ivan H. Bechtold , Adam Batycki , Anna Drewniak , Agata Szlapa-Kula , Przemyslaw Ledwon

{"title":"The role of fused thiophene and naphthalene diimide (NDI) in shaping the optical and electrical properties of donor-acceptor polymers","authors":"Klaudia Dang Anh , Paloma L. dos Santos , Mana Saeed , Mujeeb U. Chaudhry , Ivan H. Bechtold , Adam Batycki , Anna Drewniak , Agata Szlapa-Kula , Przemyslaw Ledwon","doi":"10.1016/j.orgel.2024.107058","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107058","url":null,"abstract":"<div><p>Three polymers with general structure (D-A)<sub>n</sub> were designed and synthetized to investigate the interaction of strong donors and strong acceptors in polymer chain. They are based on different fused thiophenes (<strong>1Th</strong>: 4,4′-bis(2-ethylhexyl)-cyclopenta [2,1-b:3,4-b’]dithiophene; <strong>2Th</strong>: 4,8-bis [(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b']dithiophene; <strong>3Th</strong>: 4,8-bis(4-fluoro-5-(2-ethylhexyl)-thiophen-2-yl)benzo [1,2-b:4,5-b']bisthiophene) and <em>N</em>,<em>N</em>′-bis(2-ethylhexyl)-1,8:4,5-naphthalenetetracarboxdiimide (<strong>NDI</strong>). Fused benzo- and cyclopenta-thiophene derivatives were selected because they are known for their strong electron-donating properties. NDI was coupled with them in polymer chain because it is one of the best known electron withdrawing units. Such combination of donor and acceptor units is one of the strategies for obtaining low band gap conjugated polymers with semiconducting properties for many applications. The interaction of donors and acceptors is a key factor determining the properties of such polymers. The electrochemical and spectroscopic measurement were supported by DFT calculations. Moreover, organic field effect transistors (OFET) were fabricated to demonstrate the feasibility of using the newly developed materials in electronic devices.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107058"},"PeriodicalIF":3.2,"publicationDate":"2024-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S1566119924000697/pdfft?md5=011461b7ea1b0f53acae0aa2766979be&pid=1-s2.0-S1566119924000697-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140823835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Facile synthesis of highly stable and efficient MAPbI3 perovskite quantum dots: Spectroscopic characterization and defect analysis 轻松合成高稳定、高效的 MAPbI3 包晶量子点：光谱表征和缺陷分析

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-23 DOI: 10.1016/j.orgel.2024.107037

Li-Hsuan Chen , Mohan Lal Meena , Shao-An Lu , Sudipta Som , Chih-Wei Chu , Chung-Hsin Lu

{"title":"Facile synthesis of highly stable and efficient MAPbI3 perovskite quantum dots: Spectroscopic characterization and defect analysis","authors":"Li-Hsuan Chen , Mohan Lal Meena , Shao-An Lu , Sudipta Som , Chih-Wei Chu , Chung-Hsin Lu","doi":"10.1016/j.orgel.2024.107037","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107037","url":null,"abstract":"<div><p>The hybrid methylammonium-based perovskite quantum dots (PQDs) have attracted tremendous attraction for display devices due to their low cost, high luminescence, and color purity. The large-scale production of PQDs is constrained due to the use of toxic and hazardous solvents such as dimethylformamide (DMF) in the synthesis process. Here, a novel approach to prepare PQDs using an environment-friendly solvent, gamma-valerolactone (GVL), is proposed. The synthesized PQDs were found to be uniform with less defect states as compared to the conventionally used DMF solvents, confirmed by different characterizing techniques. The stability of GVL-based PQDs was also found to be improved and proved the efficiency of the present method. Photoluminescence quantum yield (PLQY) of 98 % and single tetragonal CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> phase of GVL-derived sample retained over 15 days while the decomposition and degradation were observed in the DMF-derived sample within a short duration. A protocol for the preparation of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> PQDs with less intrinsic defects and uniform optoelectronic properties is presented and paves the way for further modifications and applications.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107037"},"PeriodicalIF":3.2,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140644177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Tuning photovoltaic parameters in polymer solar cells through side-chain modification of donor polymer based on cyclopenta[c]thiophene-4,6(5H)-dione 通过对基于环戊并[c]噻吩-4,6(5H)-二酮的供体聚合物进行侧链改性，调节聚合物太阳能电池中的光伏参数

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-22 DOI: 10.1016/j.orgel.2024.107059

Dong Hwan Son , Rahmatia Fitri Binti Nasrun , Joo Hyun Kim

{"title":"Tuning photovoltaic parameters in polymer solar cells through side-chain modification of donor polymer based on cyclopenta[c]thiophene-4,6(5H)-dione","authors":"Dong Hwan Son , Rahmatia Fitri Binti Nasrun , Joo Hyun Kim","doi":"10.1016/j.orgel.2024.107059","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107059","url":null,"abstract":"<div><p>Conjugated polymers were developed by using thiophene-dione derivatives named DEHOB-BDTF and DBOOB-BDTF. The polymers have a combination of electron donor (D) and electron acceptor (A), in which 5-(3,4-bis(((2-ethylhexyl)oxy)benzylidene)-1,3-dibromo-4H-cyclopenta[<em>c</em>]thiophene-4,6(5H)-dione (DEHOB) or 5-(3,4-bis((2-butyloctyl)oxy)benzylidene)-1,3-dibromo-4H-cyclopenta[<em>c</em>]thiophene-4,6(5H)-dione (DBOOB) serves as the electron acceptor units. The alkoxy chain shows strong electron-donating properties due to conjugation effects while longer alkoxy chain increases the solubility. Non-fullerene PSCs are fabricated with an ITO/ZnO/polymer: Y6BO/MoO<sub>3</sub>/Ag structure in which Y6BO is used as an electron acceptor. The performance of the device by using DEHOB-BDTF is accomplished up to 8.49 % (an open-circuit voltage of 0.85 V and a short-circuit current density of 20.1 mA/cm<sup>2</sup>). Furthermore, the longer alkoxy chain length enhances solubility making a well-ordering in DBOOB and reaching the fill factor of 54.2 %, due to the extended alkoxy chain can improve the miscibility in the blend.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107059"},"PeriodicalIF":3.2,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140644178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Acceptor molecules with different central and terminal units for P3HT based solar cells: Effects of the molecular structures on their properties 用于 P3HT 太阳能电池的具有不同中心单元和终端单元的受体分子：分子结构对其特性的影响

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-16 DOI: 10.1016/j.orgel.2024.107057

Jie Xu , Shifeng Liang , Yan Xu , Wang Ni , Miaomiao Li , Yanhou Geng

引用次数: 0

Photogating-based organic synapse electronics modulated by dielectric 由电介质调制的基于光电效应的有机突触电子器件

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-16 DOI: 10.1016/j.orgel.2024.107056

Seungme Kang , Minseo Kim , Chansik Yoo , Byeong Min Lim , Byung Chul Jang , Wonjun Shin , Hong-Sub Lee , Hocheon Yoo

{"title":"Photogating-based organic synapse electronics modulated by dielectric","authors":"Seungme Kang , Minseo Kim , Chansik Yoo , Byeong Min Lim , Byung Chul Jang , Wonjun Shin , Hong-Sub Lee , Hocheon Yoo","doi":"10.1016/j.orgel.2024.107056","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107056","url":null,"abstract":"<div><p>The greatest strength of photogating effect is that the current level can be adjusted by light. Research on photogating effect is still actively underway, and various factors play a role in causing photo-reaction. In general, they work in such a way that photo-generated carriers generated under certain conditions are trapped, leading to threshold voltage shifts. Here we focus on the surface environment in which photocarriers are trapped/de-trapped. To analyze the difference in photo-response depending on the insulating layer of the phototransistor, we produced a DNTT TFTs with a SiO<sub>2</sub> dielectric and a DNTT TFTs with a TiO<sub>2</sub>/SiO<sub>2</sub> dielectric. Except for the insulating layer, the channel and source/drain electrodes use dinaphtho [2,3-b:2′,3′- f]thieno [3,23,2-b]thiophene (DNTT) and Au. 500 nm and 600 nm irradiation allowed a gradual current rise while DNTT TFTs with a TiO<sub>2</sub>/SiO<sub>2</sub> dielectric allowed fast de-trapping. Additionally, facial recognition synapse simulation using 500 nm and 600 nm light using a DNTT TFTs with a TiO<sub>2</sub>/SiO<sub>2</sub> dielectric achieved recognition rates of over 90%.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107056"},"PeriodicalIF":3.2,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140631229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Dibenzo[b,d]thiophene 5,5-dioxide-based dopant-free hole-transporting material with passivation effect in inverted perovskite solar cells 基于二苯并[b,d]噻吩-5,5-二氧化物的无掺杂剂空穴传输材料，在倒置过氧化物太阳能电池中具有钝化效应

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-10 DOI: 10.1016/j.orgel.2024.107055

Lei Chen , Zhengxu Liu , Zhe Sun , Chuanyu Zhou , Ziyin Chen , Junjie Zhou , Zijun Ma , Zhihan Wang , Jiaqi Xin , Shuai Zhang , Pengyun Huo , Xiang Fang , Jiawei Chen , Mingfu Ye , Jing Zhang , Ningyi Yuan

{"title":"Dibenzo[b,d]thiophene 5,5-dioxide-based dopant-free hole-transporting material with passivation effect in inverted perovskite solar cells","authors":"Lei Chen , Zhengxu Liu , Zhe Sun , Chuanyu Zhou , Ziyin Chen , Junjie Zhou , Zijun Ma , Zhihan Wang , Jiaqi Xin , Shuai Zhang , Pengyun Huo , Xiang Fang , Jiawei Chen , Mingfu Ye , Jing Zhang , Ningyi Yuan","doi":"10.1016/j.orgel.2024.107055","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107055","url":null,"abstract":"<div><p>For the rocket development of organic-inorganic hybrid perovskite solar cells (OIH–PSCs), the research of low-cost, dopant-free hole-transporting materials (HTMs) with high performance and stability is still an urgent problem. In this work, we synthesize organic small molecule HTM with sulfone-containing benzodithiophene (BDTOxide) as the central unit, termed BDTOxide-MTP. The synthetic cost of DBTOxide-MTP in the lab is 238 CNY/g, which is just one-fifth of the cost of the PTAA (1200 CNY/g). BDTOxide-MTP exhibits the deep highest occupied molecular orbital energy level, high hole transport mobility, and excellent passivation effect. BDTOxide-MTP is introduced into inverted OIH-PSCs as a dopant-free hole transport layer, the champion efficiency of MAPbI<sub>3-x</sub>Cl<sub>x</sub>-based devices reaches 18.72 % with an excellent <em>V</em><sub>OC</sub> of 1.13 V, while the efficiency of the control device based on PTAA is about 18.49 %. The device based on BDTOxide-MTP exhibits comparable stability to the one based on PTAA, which can maintain over 90 % of the original efficiency after 46 days in a nitrogen environment.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107055"},"PeriodicalIF":3.2,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140545987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of mild mechanical stresses on device physics of slot-die coated flexible perovskite solar cells 轻微机械应力对槽栅镀膜柔性过氧化物太阳能电池器件物理特性的影响

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-07 DOI: 10.1016/j.orgel.2024.107049

Hryhorii P. Parkhomenko, Yerassyl Yerlanuly, Viktor V. Brus, Askhat N. Jumabekov

{"title":"Effect of mild mechanical stresses on device physics of slot-die coated flexible perovskite solar cells","authors":"Hryhorii P. Parkhomenko, Yerassyl Yerlanuly, Viktor V. Brus, Askhat N. Jumabekov","doi":"10.1016/j.orgel.2024.107049","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107049","url":null,"abstract":"<div><p>Halide perovskites are a promising class of novel photoactive materials for their application in flexible photovoltaic devices. Tolerance and stability of devices to various mechanical stresses are important aspects of this technology for its effective and long-term operation. Currently, this aspect has not been fully researched and addressed by the research community. Hence, this work is aimed at studying the effect of mild mechanical stresses (MMSs) induced by convex bending on the behaviour of ITO/ZnO/MAPbI<sub>3</sub>/Spiro-OMeTAD/Au slot-die-coated flexible perovskite solar cells (FPSCs) and investigating the underlying mechanisms leading to performance degradation in devices. The carrier generation, recombination, and extraction processes within FPSCs are investigated before and after the application of MMSs. The obtained results suggest that the photovoltaic performance of the FPSCs deteriorates by up to 50% after convex bending, due to increased non-radiative recombination losses. The results obtained in this work provide some valuable insights into the dynamics of recombination processes in FPSCs exposed to MMSs and can be used for developing new strategies for improving the mechanical stability of devices.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107049"},"PeriodicalIF":3.2,"publicationDate":"2024-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140535437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Compact modeling of hysteresis in organic thin-film transistors 有机薄膜晶体管磁滞的紧凑建模

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-05 DOI: 10.1016/j.orgel.2024.107048

A. Romero , J.A. Jiménez-Tejada , R. Picos , D. Lara , J.B. Roldán , M.J. Deen

{"title":"Compact modeling of hysteresis in organic thin-film transistors","authors":"A. Romero , J.A. Jiménez-Tejada , R. Picos , D. Lara , J.B. Roldán , M.J. Deen","doi":"10.1016/j.orgel.2024.107048","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107048","url":null,"abstract":"<div><p>In this work, we propose a model that describes the temporal evolution of the threshold voltage and trapped charge density in Thin-Film Transistors (TFTs) under dynamic conditions, paving the way for the characterization and modeling of memory transistors. The model is expressed as a first-order differential equation for the trapped charge density, which is controlled by a time constant and an independent term proportional to the drain current. The time-dependent threshold voltage is introduced in a previously developed compact model for TFTs with special consideration to the contact effects. The combination of both models and the use of an evolutionary parameter extraction procedure allow for reproducing the experimental dynamic behavior of TFTs. The results of the model and the evolutionary procedure have been validated with published experimental data of pentacene-based transistors. The procedure is able to simultaneously reproduce three kinds of experiments with different initialization routines and constraints in each of them: output and transfer characteristics with hysteresis and current transients characteristics.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107048"},"PeriodicalIF":3.2,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S1566119924000594/pdfft?md5=b16aae9575b227577a5af77897ff4add&pid=1-s2.0-S1566119924000594-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140555189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bifunctional chemical bonds for trap inactivation and ion immobilization in fully ambient-air processed perovskite solar cells 用于全环境空气处理过氧化物太阳能电池中阱失活和离子固定的双功能化学键

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-04 DOI: 10.1016/j.orgel.2024.107039

Fei Wang , Wei Huang , Dandan Luo , Jun Han , Chong Jia , Qiang Zhao , Yiqing Chen

{"title":"Bifunctional chemical bonds for trap inactivation and ion immobilization in fully ambient-air processed perovskite solar cells","authors":"Fei Wang , Wei Huang , Dandan Luo , Jun Han , Chong Jia , Qiang Zhao , Yiqing Chen","doi":"10.1016/j.orgel.2024.107039","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107039","url":null,"abstract":"<div><p>For the past few years, air-processed perovskite solar cells (PSCs) have raised interests from researchers around the world, due to the urgent demand for the roll-to-roll (R2R) industrialization. However, lots of detrimental effects, such as imperfect active film quality and plentiful traps on the surface, or especially grain boundaries (GBs) for the samples fabricated under the ambient conditions, can seriously damage both the performance and stability of PSCs. Thereby, in this study, a cross-linking passivator, dodecanoic acid (DA), was incorporated in order to improve the crystallinity of air-processed perovskite films. On the one hand, DA agents with carboxy group and –O points, could chelate tightly with nonbonding Pb<sup>2+</sup> ions of perovskite crystal, as well as interact with I<sup>−</sup> anions through hydrogen network. The hindered trap formation and immobilized ions improve the power conversion efficiency (PCE) of the device. On the other hand, the long hydrophobic alkyl chains of DA were prone to be accumulated at the GBs of the perovskite grains, thus boosting the moist resistance. Consequently, the champion device gained a PCE of 20.23% with hindered hysteresis. Moreover, the unpackaged DA-passivated PSC retains 81.7% of its original PCE after aging under ambient conditions for 5 weeks. This simple and viable approach for fabricating perovskite-based optoelectronic device with high performance and promising stability, can promote its large production and commercialization.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107039"},"PeriodicalIF":3.2,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140535438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

BTBT-based organic semiconducting materials for EGOFETs with prolonged shelf-life stability 基于 BTBT 的有机半导体材料，用于具有较长保质期稳定性的 EGOFET

IF 3.2 4区工程技术

Organic Electronics Pub Date : 2024-04-04 DOI: 10.1016/j.orgel.2024.107047

Polina A. Shaposhnik , Askold A. Trul , Elena Yu Poimanova , Ekaterina A. Sorokina , Oleg V. Borshchev , Elena V. Agina , Sergey A. Ponomarenko

{"title":"BTBT-based organic semiconducting materials for EGOFETs with prolonged shelf-life stability","authors":"Polina A. Shaposhnik , Askold A. Trul , Elena Yu Poimanova , Ekaterina A. Sorokina , Oleg V. Borshchev , Elena V. Agina , Sergey A. Ponomarenko","doi":"10.1016/j.orgel.2024.107047","DOIUrl":"https://doi.org/10.1016/j.orgel.2024.107047","url":null,"abstract":"<div><p>Electrolyte-gated organic field-effect transistors are electronic devices that are being actively developing as a platform for ultra-sensitive biosensors. The organic semiconductor shelf-life stability is important for the practical application of EGOFETs. Therefore, we aimed to develop the organic semiconductor that combines high electrical performance with stability of thin film morphology and electrical characteristics. Two OSC materials were investigated: commercially available C8-BTBT and siloxane dimer BTBT, D2-Und-BTBT-Hex, both characterized by high transconductance and ON/OFF ratio after EGOFET fabrication. Shelf-life was evaluated by keeping the devices under ambient conditions and periodical measuring transfer characteristics in water. C8-BTBT devices demonstrated a sharp decline of ON/OFF ratio within three weeks, which was associated with the thin film reorganization from metastable surface induced 2D crystals to thermodynamically stable 3D crystals leading to appearance of defects in the thin film and subsequent separation into individual crystals. D2-Und-BTBT-Hex had much more stable morphology due to intrinsic properties of the dimer molecules: the presence of a bulky but flexible disiloxane group linking two BTBT moieties together, which leads to a higher molar weight and less crystallization enthalpy. Both these factors stabilize the surface phase thus increasing stability of the thin films of the dimer. It was shown that the devices using D2-Und-BTBT-Hex as a semiconductor layer can be stored at shelf without any additional precautions for at least 4 months.</p></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"129 ","pages":"Article 107047"},"PeriodicalIF":3.2,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140557546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0