Organic ElectronicsPub Date : 2025-10-01Epub Date: 2025-07-19DOI: 10.1016/j.orgel.2025.107306
Minso Kim, Sojin Lee, Kihyon Hong
{"title":"The role of terpineol additive in poly(3-hexylthiophene) films for enhanced performance of electrolyte gated transistors","authors":"Minso Kim, Sojin Lee, Kihyon Hong","doi":"10.1016/j.orgel.2025.107306","DOIUrl":"10.1016/j.orgel.2025.107306","url":null,"abstract":"<div><div>Solution-processed electrolyte-gated transistors (EGTs) offer several advantages, including low operating voltage, high drain current levels, and versatile processability. For EGTs utilizing polymer semiconductors, the device's electrical properties are significantly influenced by the surface morphology and microstructure of the polymer film. One way to improve the film properties is employing solvent additive to polymer precursor solution. Terpineol has been a widely used additive in poly (3-hexylthiophene) (P3HT) precursor solution. In this work, we systematically investigated the effect of terpineol additive on P3HT film morphology and electrical performance of EGTs. The P3HT film, formed via spin-coating from this modified precursor solution, exhibited a dense and continuous morphology. Transistors fabricated with this solvent additive demonstrated improved electrical performance, with mobility increasing from 1.22 to 1.62 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> for a 1.54 % additive content. This investigation provides insights into the influence of high boiling point additives on the morphology of polymer semiconductor films and serves as a guide to aid in the use of such additives within EGTs and other electrical devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107306"},"PeriodicalIF":2.7,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144696965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-10-01Epub Date: 2025-07-11DOI: 10.1016/j.orgel.2025.107302
Benjamin Nketia-Yawson, Jea Woong Jo
{"title":"Hydroxylamine additive enabled interface trap reduction for enhanced fullerene-based n-type organic transistors","authors":"Benjamin Nketia-Yawson, Jea Woong Jo","doi":"10.1016/j.orgel.2025.107302","DOIUrl":"10.1016/j.orgel.2025.107302","url":null,"abstract":"<div><div>Solution-processable organic semiconductors present excellent structural tunability, enabling the regulation of their electrical characteristics through doping and additive engineering. In this study, we demonstrate charge transport enhancement in n-type organic field-effect transistors (OFETs) based on [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) with hydroxylamine (HoA) additives. The PCBM OFETs with optimized HoA content exhibited electron mobility enhanced by over twofold compared to that of pristine devices, along with a substantial negative shift in threshold voltage. These improvements would be attributed to interface trap reduction, originating from the synergistic hydrogen-bonding interaction between the PCBM and HoA additives. These findings suggest that the inclusion of HoA additives in n-type organic semiconductors can significantly enhance the electron transport properties of n-type organic transistors and related devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107302"},"PeriodicalIF":2.7,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-10-01Epub Date: 2025-07-23DOI: 10.1016/j.orgel.2025.107294
Jing Yi , Ruiting Zhang , Yanfeng Dai , Dongge Ma
{"title":"Effects of thin metal/metal oxide composite modification layer on ITO anode in organic light-emitting diodes","authors":"Jing Yi , Ruiting Zhang , Yanfeng Dai , Dongge Ma","doi":"10.1016/j.orgel.2025.107294","DOIUrl":"10.1016/j.orgel.2025.107294","url":null,"abstract":"<div><div>The effects of thin metal film gold or silver (Au and Ag) combined with transition metal oxides (TMOs) V<sub>2</sub>O<sub>5</sub> and MoO<sub>3</sub> used as composite modification layer on ITO anode in organic light-emitting diodes (OLEDs) were investigated and compared. It was found that incorporating the thin metal film (Au or Ag) with V<sub>2</sub>O<sub>5</sub> (MoO<sub>3</sub>) modification layer facilitates to improve the hole injection into the hole transport layer (HTL), thereby enhancing the performance of OLEDs. The device with V<sub>2</sub>O<sub>5</sub> -modified thin metal film on ITO exhibited higher electroluminescent (EL) efficiency compared to that with MoO<sub>3</sub>-modified thin metal film. Specifically, the device with the structure ITO/Au (0.5 nm)/V<sub>2</sub>O<sub>5</sub> (1 nm) achieved a current efficiency of 96 cd/A. The ultraviolet photoelectron spectroscopy (UPS) investigation revealed that ITO/thin metal/V<sub>2</sub>O<sub>5</sub> structure has a higher work function than ITO/thin metal/MoO<sub>3</sub>, which contributes to the improved hole injection.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107294"},"PeriodicalIF":2.7,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144696968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-10-01Epub Date: 2025-07-04DOI: 10.1016/j.orgel.2025.107292
Hao-Che Kao , Jia-Fan Wu , Jhao-Cheng Lu , Kuan-Hsun Wang , Kuan-Wei Chen , Chia-Chen Chung , Chung-Chih Wu , Chih-Hao Chang
{"title":"Blue-emitting OLED with a broad spectral profile for phototherapy light source of neonatal jaundice","authors":"Hao-Che Kao , Jia-Fan Wu , Jhao-Cheng Lu , Kuan-Hsun Wang , Kuan-Wei Chen , Chia-Chen Chung , Chung-Chih Wu , Chih-Hao Chang","doi":"10.1016/j.orgel.2025.107292","DOIUrl":"10.1016/j.orgel.2025.107292","url":null,"abstract":"<div><div>Neonatal jaundice, caused by bilirubin accumulation due to liver immaturity, requires blue light phototherapy for effective treatment. Conventional LED-based systems are limited by their narrow spectral width, potential thermal hazards, and the requirement to separate infants from caregivers. By integrating pure-blue fluorescent (BCzVBi) and sky-blue phosphorescent (FIrpic) emitters into a tandem organic light-emitting diode (OLED) structure, we developed blue OLEDs with a broad emission spectrum (430–530 nm) that better aligns with the bilirubin absorption band. The devices achieve a sufficient spectral power density (10–30 μW/cm<sup>2</sup>/nm) while maintaining surface temperatures well below 42 °C, making them well-suited for wearable applications. Emission profiles and doping concentrations were optimized to broaden the EL spectra. Thermal tests confirmed stable and safe operation under driving voltages of 13–14 V. The developed tandem OLEDs, featuring both a broad spectrum and high efficiency, represent a promising alternative to conventional LEDs for safer and more effective phototherapy of neonatal jaundice.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107292"},"PeriodicalIF":2.7,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144588200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-10-01Epub Date: 2025-07-29DOI: 10.1016/j.orgel.2025.107314
Hong Zhu , Wenkai Tan , Lijian Chen , Quanhua Chen , Guangan Yang , Li Zhu , Xiang Wan , Chee Leong Tan , Dongyoon Khim , Zhihao Yu , Yong Xu , Huabin Sun
{"title":"Achieving uniform electrical performance by regulating domain structure in aligned DPPT-TT: PMMA blended layers","authors":"Hong Zhu , Wenkai Tan , Lijian Chen , Quanhua Chen , Guangan Yang , Li Zhu , Xiang Wan , Chee Leong Tan , Dongyoon Khim , Zhihao Yu , Yong Xu , Huabin Sun","doi":"10.1016/j.orgel.2025.107314","DOIUrl":"10.1016/j.orgel.2025.107314","url":null,"abstract":"<div><div>Polymer field-effect transistors (PFETs) hold significant promise for flexible displays. However, their widespread application is hindered by performance non-uniformity arising from vatiations in chain alignment and domain structures. This paper optimizes the electrical uniformity by integrating the Langmuir-Blodgett (LB) technique with poly (methyl-methacrylate) (PMMA) blending in aligned copolymer DPPT-TT semiconductor layers. The LB process enhances molecular orientation, strengthening π-π intermolecular interactions. The on-current of parallel-channel devices reaches 27 μA, which is a 20 % increase compared to orthogonal-channel devices. Incorporating PMMA (DPPT-TT:PMMA = 1:0.4) optimize film morphology, exhibit a more uniform threshold voltage of 4.3 ± 2.1 V, compared to 5.5 ± 3.4 V for those without PMMA. Similarly, the sub-threshold swing is more consistent at 6.5 ± 0.9 V/dec with PMMA, versus 6.7 ± 1.1 V/dec without it. The trap density of devices with PMMA is 3.0 × 10<sup>12</sup> eV<sup>−1</sup>cm<sup>−2</sup>, which is a 75 % reduction compared to devices without PMMA. These results demonstrate a scalable strategy for fabricating high-uniformity PFETs, advancing their applicability in flexible circuits.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107314"},"PeriodicalIF":2.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-10-01Epub Date: 2025-07-19DOI: 10.1016/j.orgel.2025.107304
Talal M. Althagafi , Mudassir Hussain Tahir , Sumaira Naeem , Fatimah Mohammed A. Alzahrani , M.S. Al-Buriahi
{"title":"Prediction of UV/visible absorption maxima of organic compounds in dichloromethane and database generation of organic compounds with red-shifted absorption maxima","authors":"Talal M. Althagafi , Mudassir Hussain Tahir , Sumaira Naeem , Fatimah Mohammed A. Alzahrani , M.S. Al-Buriahi","doi":"10.1016/j.orgel.2025.107304","DOIUrl":"10.1016/j.orgel.2025.107304","url":null,"abstract":"<div><div>The current study uses machine learning (ML) to estimate the UV/visible absorption maxima. There are four ML models that are tested. Random Forest model is the best model due to smallest difference between the r-squared values for the training set and test set. Important features are also researched. Python-based tools are used to generate and visualise new chemical compounds, totalling twenty thousand. Predicted UV/visible absorption maxima values are used to screen organic substances. Red-shifted absorption organic molecules are chosen. Analysis of synthetic accessibility scores has indicated that synthesis of large percentage of selected compounds will be easy.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107304"},"PeriodicalIF":2.7,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144680568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A modular access to N-heterocycle-winged boron-nitrogen multiresonant emitters with narrowband deep-blue emissions","authors":"Yuhang Fan, Songtao Li, Yuxuan He, Junjie Liu, Zhengyang Bin, Ge Gao","doi":"10.1016/j.orgel.2025.107312","DOIUrl":"10.1016/j.orgel.2025.107312","url":null,"abstract":"<div><div>Boron-nitrogen multiresonant thermally activated delayed fluorescence (BN MR-TADF) emitters have attracted widespread attention for high performance organic light-emitting diodes (OLEDs) due to their narrowband emissions and high efficiencies. However, emitters incorporating electron-deficient N-heterocycles are rarely reported and remain largely unexplored because of synthetic challenges under harsh borylation conditions. We present a protection/deprotection strategy using benzyl groups to overcome this restriction to offer a modifiable core molecule <strong>HBN</strong>, enabling late-stage modular introduction of electron-deficient N-heterocycles to furnish a variety of novel N-heterocycle-winged BN emitters, the <strong>HetBN</strong> series. It should be noted that a unique sequential two-step debenzylation protocol is developed and must be applied to remove both benzyl groups. As exemplified herein, four emitters, <strong><em>o</em>PyBN</strong>, <strong><em>m</em>PyBN</strong>, <strong>PymBN</strong>, and <strong>PhTzBN</strong>, which are inaccessible via conventional methods, were successfully prepared. They emit deep-blue photoluminescence with fine-tuneable wavelengths below 454 nm, high PLQYs above 90 %, narrow FWHMs under 30 nm, and fast exciton dynamics, demonstrating the beneficial effect of N-heterocycles in fine-tuning the photophysical properties of BN MR-TADF emitters. A preliminary OLED device fabricated with <strong>PhTzBN</strong> exhibited deep-blue emission at 444 nm with a narrow FWHM of 31 nm (0.19 eV), the Commission Internationale de l’Éclairage (CIE) coordinates of (0.16, 0.08), and a maximum external quantum efficiency (EQE) of 5.2 %. This study paves the way to modular synthesis of innovative N-heterocycle-winged BN MR-TADF emitters.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107312"},"PeriodicalIF":2.6,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144773057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-09-01Epub Date: 2025-05-19DOI: 10.1016/j.orgel.2025.107278
YanChao Xu , Xingchong Liu , Yongshan Peng , Tanggui He , Anmin Tang , Haimin Li , Hanyu Wang
{"title":"Interface modification by sulfonamide for high-efficiency and stable perovskite solar cells","authors":"YanChao Xu , Xingchong Liu , Yongshan Peng , Tanggui He , Anmin Tang , Haimin Li , Hanyu Wang","doi":"10.1016/j.orgel.2025.107278","DOIUrl":"10.1016/j.orgel.2025.107278","url":null,"abstract":"<div><div>Tin dioxide (SnO<sub>2</sub>) is a promising material for the electron transport layer in n-i-p perovskite solar cells, but its performance is limited by internal defects and band misalignment with the perovskite layer. In this study, para-hydroxybenzenesulfonamide (PCBS) was used to modify the buried interface between SnO<sub>2</sub> and perovskite. The -COOH and S=O groups in PCBS passivate the -OH and Sn in SnO<sub>2</sub>, respectively. Meanwhile, the -NH<sub>2</sub> group passivates the excess Pb<sup>2+</sup> within the perovskite film. The PCBS modification enhances the hydrophobicity of the SnO<sub>2</sub> surface, promoting the growth of high-quality, large-grain perovskite films, thereby significantly suppressing non-radiative recombination in perovskite solar cells (PSCs). Moreover, the PCBS modification introduces better energy-level alignment between the SnO<sub>2</sub> and perovskite layers, enabling more efficient electron extraction. Finally, the PCBS interface enhanced the power conversion efficiency (PCE) of PSCs to 21.47 %. After 1440 h of storage in a N<sub>2</sub> atmosphere, the unencapsulated PSCs with interface alteration kept 93.9 % of their original value. These results indicate that burying the perovskite layer with PCBS is a promising strategy to improve the performance of PSCs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107278"},"PeriodicalIF":2.7,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144105334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-09-01Epub Date: 2025-05-09DOI: 10.1016/j.orgel.2025.107272
Baoxiang Chai , Qiaoli Niu , Junhao Xiong , Jun Yang , Yuqing Chen , Wenjin Zeng , Xinwen Peng , Tao Yang , Ruidong Xia
{"title":"Hydroxyethyl cellulose passivation for high-efficiency pure-red perovskite light-emitting diodes","authors":"Baoxiang Chai , Qiaoli Niu , Junhao Xiong , Jun Yang , Yuqing Chen , Wenjin Zeng , Xinwen Peng , Tao Yang , Ruidong Xia","doi":"10.1016/j.orgel.2025.107272","DOIUrl":"10.1016/j.orgel.2025.107272","url":null,"abstract":"<div><div>Perovskite light-emitting diodes (PeLEDs) have exhibited tremendous potential for commercial applications in the fields of displays, lighting, and information technology. For achieving pure red electroluminescence, quasi-two-dimensional (Q-2D) perovskite based on Br/I mixed halides has been commonly used. However, during the in-situ crystallization process of perovskite films via low-temperature solution methods, the complexity of coordination among various ions leads to the presence of uncoordinated ions, resulting in numerous defects in the perovskite films. These defects significantly impact the performance and stability of PeLEDs. In this work, hydroxyethyl cellulose (HEC) was incorporated into the hole transport layer (HTL) to passivate the defects in perovskite films. Experimental results showed that the hydroxyl groups in HEC interacted with Pb<sup>2+</sup>/K<sup>+</sup>/PEA<sup>+</sup> ions in the perovskite, contributing to the passivation of defects. Simultaneously, the addition of HEC inhibited the low-dimensional phases (n = 1, 2) and enhanced the high-dimensional phase (n = 3) in the Q-2D perovskite films. The optimized distribution of n phases was favorable for the radiative recombination. After the introduction of HEC, the external quantum efficiency (EQE) of pure red PeLEDs at 636 nm showed a significant improvement compared to the control device, from 5.31 % to 6.82 %. This strategy provides an excellent alterative to improve the electroluminescent efficiency of red PeLEDs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107272"},"PeriodicalIF":2.7,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143937262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic ElectronicsPub Date : 2025-09-01Epub Date: 2025-05-12DOI: 10.1016/j.orgel.2025.107274
Yingquan Peng , Qinyong Dai , Nan Chen , Wenli Lv , Lei Sun , Sunan Xu , Ying Wang
{"title":"Determination of exciton diffusion lengths potentially free from electrodes and charge related inaccuracies","authors":"Yingquan Peng , Qinyong Dai , Nan Chen , Wenli Lv , Lei Sun , Sunan Xu , Ying Wang","doi":"10.1016/j.orgel.2025.107274","DOIUrl":"10.1016/j.orgel.2025.107274","url":null,"abstract":"<div><div>Exciton diffusion length is one of the key parameters of an organic semiconductor thin film, and plays an important role in optimizing the performance of organic optoelectronic devices. By the existing photoelectronic methods for measuring the exciton diffusion length, vertical diode structure is used, which may lead to inaccuracies resulting from the electrode and charge related effects, such as enhanced quenching of excitons near the metal/organic interface and annihilation of excitons via charge-exciton interaction. Herein we propose a novel method for measuring the exciton diffusion length by incorporating the testing organic film into an organic phototransistor. In the device sample, the testing organic film is free from electrode contact and electric filed, enabling measurement free from errors related to the effects of metal electrodes. More importantly, in our method the generation and diffusion of excitons is fully isolated from photocarrier transport, eliminating the error associated with charge-exciton interactions. For demonstration, the exciton diffusion length of tin phthalocyanine (SnPc) thin film was determined to be 14.03 ± 2.76 nm, which is in good agreement with that reported in literatures.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107274"},"PeriodicalIF":2.7,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144069037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}