H. Okada, Y. Ogawa, H. Fukuoka, Y. Kanatani, Y. Sano, Y. Itoh, M. Hijikagawa
{"title":"Development of a low voltage source driver for large TFT-LCD system for computer applications","authors":"H. Okada, Y. Ogawa, H. Fukuoka, Y. Kanatani, Y. Sano, Y. Itoh, M. Hijikagawa","doi":"10.1109/DISPL.1991.167445","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167445","url":null,"abstract":"A 3-b digital source driver driven by a single +5-V power source has been developed for large TFT-LCD (thin-film transistor liquid-crystal display) panels already under mass production. The maximum sampling speed of this driver is up to 20 MHz, more than three times as fast as the traditional analog sampling driver. The new driver's LSI chip is a square about 30 mm/sup 2/, smaller than half the square made under the hybrid process. A new technology was developed to drive this driver, i.e., alternating the grey level voltage and also alternating the Vcom inversely with the polarity. With this new driver and its driving mechanism, a 10.4-in CA (computer application) TFT-LCD system has been mass-produced that can generate 512 colors simultaneously for every panel pixel.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"96 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120906378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High mobility cadmium selenide transistors","authors":"M. Lee, S. Wright, C. P. Judge, P. Cheung","doi":"10.1109/DISPL.1991.167472","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167472","url":null,"abstract":"Field-effect mobilities in excess of 450 cm/sup 2/ V/sup -1/ s/sup -1/ are reported in CdSe TFTs (thin-film transistors) using a maximum process temperature of 400 degrees C. Devices with channel lengths, ranging from 5 mu m to 30 mu m with aspect ratios of 0.5 to 40 were prepared. The transfer characteristics are very steep with a gate voltage swing of approximately 15 V, giving a switching ratio of >10/sup 9/ with an off current of <10/sup -14/ A/square which is relatively insensitive to the drain voltage. Comparisons between circuit simulations using HSPICE and experimental results are shown.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121225394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Vignolle, C. Meysen, B. Hepp, B. Mourey, D. Castleberry
{"title":"Optimisation of very small pitch active matrix LCD for projection","authors":"J. Vignolle, C. Meysen, B. Hepp, B. Mourey, D. Castleberry","doi":"10.1109/DISPL.1991.167475","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167475","url":null,"abstract":"AM LCDs (liquid crystal displays) with <100- mu m pitches are capable of EDTV/HDTV (enhanced-definition/high-definition TV) projection, but these pitches imply electrical parasitic effects and small aperture ratio. A structure combining a storage capacitor and a black matrix with an 85- mu m pitch is evaluated and experimental results are presented. It is shown that the ground-plane-type storage capacitor is very efficient for designing low-pitch AM LCDs for projection since it reduces the many couplings of the cell. Moreover, a black matrix can easily be designed on that ground plane, which helps to keep a high OAR (open aperture ratio): a 85- mu m-pitch cell with a >60% OAR has been achieved thanks to this design.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127091314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dyeing color-filters for liquid crystal display","authors":"T. Sugiura","doi":"10.1109/DISPL.1991.167438","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167438","url":null,"abstract":"It is pointed out that the development of LCDs (liquid crystal displays) for OA and TV has focused on larger sizes and coloring. A color filter (CF) which makes colored-LCDs possible must have higher color purity and contrast to light. To match these features, a water soluble photosensitive composition composed of special polypeptides obtained by hydrolysis of cattle gelatin was developed. The photosensitive composition has good resolution and stability for aging. The hydrolyzate can be produced in a good yield under strict control to have a narrow distribution of a desirable molecular weight. The dyeing CF, featuring the hydrolyzate, is the most suitable for commercial production.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126730821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Little, H. Koike, K. Takahara, T. Nakazawa, H. Ohshima
{"title":"A 9.5 inch, 1.3 mega-pixel low temperature poly-Si TFT-LCD fabricated by SPC of very thin films and an ECR-CVD gate insulator","authors":"T. Little, H. Koike, K. Takahara, T. Nakazawa, H. Ohshima","doi":"10.1109/DISPL.1991.167474","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167474","url":null,"abstract":"A unique combination of solid-phase crystallization (SPC) and gate insulator technology has been used to fabricate low-temperature poly-Si TFTs (thin-film transistors). Using this technology, a high-resolution 9.5-in TFT-LCD (liquid crystal display) with 1.3 mega-pixels has been realized. SPC has allowed the formation of poly-Si TFTs with both lower OFF currents and higher ON currents than as-deposited poly-Si TFTs, without sacrificing the latter's inherent advantages of uniformity and large area capability. Meanwhile, ECR-CVD (electron cyclotron resonance chemical vapor deposition) SiO/sub 2/ has allowed excellent control of the MOS interface and eliminates the need for hydrogenation.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115530465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Matsueda, T. Shimobayashi, N. Okamoto, I. Yudasaka, H. Ohshima
{"title":"4.55-in. HDTV poly-Si TFT light valve for LCD projectors","authors":"Y. Matsueda, T. Shimobayashi, N. Okamoto, I. Yudasaka, H. Ohshima","doi":"10.1109/DISPL.1991.167419","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167419","url":null,"abstract":"A 4.55-in. HDTV (high-definition television) poly-Si TFT (thin-film transistor) light valve with 960*1439 pixels for LCD (liquid crystal display) projectors has been developed. This is the smallest transmission-type HDTV TFT light valve yet produced, and it has an aperture ratio which is higher than 30% despite the use of a redundant TFT structure and sufficient storage capacity in the pixels. Optimization of redundant poly-Si TFT circuits with sufficient storage capacitance has realized excellent image quality suitable for HDTV. Laser cutting and deposition technology make it possible to repair most of the defects in the TFT substrate before LCD assembly. The repaired points are reliable and have no effect on the image quality because they are covered with passivation and alignment layers after repairing.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122012665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Batch-processing of high performance amorphous-silicon/silicon-nitride thin-film transistors (for active-matrix addressable LCD)","authors":"B.C. Ahn, H. Kanoh, O. Sugiura, M. Matsumura","doi":"10.1109/DISPL.1991.167439","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167439","url":null,"abstract":"The low-temperature chemical-vapor-deposition (CVD) method has been applied to the batch process of amorphous-silicon/silicon-nitride thin-film transistors (a-Si/SiN TFTs). The high-performance a-Si/SiN TFTs (mobility >1 cm/sup 2//Vs, threshold voltage <7 V, and subthreshold voltage-swing <1.5 V/decade) have been fabricated with good reproducibility and uniformity over a wide range of CVD conditions. This feature makes the a-Si/SiN TFT batch-process practical. The films have the unique feature that their electronic properties change slightly within a wide range of CVD conditions. Thus, the CVD system can be optimized by adjusting the wall temperature to achieve the identical deposition rate along the gas flow. Then, uniform TFT characteristics can be obtained over large and stacked substrate surfaces.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116267753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Two-domain twisted nematic and tilted homeotropic liquid crystal displays for active matrix applications","authors":"K. Yang","doi":"10.1109/DISPL.1991.167435","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167435","url":null,"abstract":"To overcome the viewing-angle dependence of TN (twisted nematic) cells, the author has investigated two-domain TN (TDTN) and two-domain tilted homeotropic (TDTH) cells with optical compensation for active matrix applications. The simulated and experimental results for TDTN show a large viewing zone of +or-40 degrees in the vertical and +or-60 degrees in the horizontal directions with excellent grayscale fidelity. TDTN has been fabricated using multiple rubbings and one masking operation. Simulated results for compensated single-domain TH and TDTH are also reported. TDTH cells have been fabricated using a total of four oblique evaporations and one mask. The width of the disclination line between the two domains of TDTN or TDTH cells is discussed.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124012495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A compensative driving method for common electrode voltage distortions in TFT-LCDs","authors":"S. Tomita, O. Tomita, K. Kasahara","doi":"10.1889/1.1984862","DOIUrl":"https://doi.org/10.1889/1.1984862","url":null,"abstract":"The authors describe results of investigation and analysis of common electrode (counter electrode) voltage distortions which cause horizontal-crosstalk and degradation of the contrast ratio. A novel driving method, in which an AC voltage is applied independently to storage capacitor bus-lines, is proposed to compensate the distortions. Its effect has been confirmed by waveform observation, horizontal-crosstalk observation, and V-T characteristics in both common-DC and common-alternation drives. In the common-alternation drive, it has been further confirmed that the driving method can compensate for distortion of voltages across the liquid crystal layer which does not occur in the common-DC drive.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120337967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of processing temperature on polysilicon thin film transistors for active matrix LCDs","authors":"U. Mitra, B. Khan, M. Venkatesan, E. Stupp","doi":"10.1109/DISPL.1991.167471","DOIUrl":"https://doi.org/10.1109/DISPL.1991.167471","url":null,"abstract":"The effect of processing conditions on polysilicon TFT (thin-film transistor) performance is explained. By careful selection of process techniques excellent devices are obtained, independent of processing temperature. It is possible to fabricate polysilicon TFTs at low temperature with performance comparable to that of high-temperature TFTs by replacing the high-temperature steps with low-temperature steps which have the same effect on the material and device structure. These TFTs are used in full-resolution LCDs (liquid crystal displays) for projection television.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128232518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}