A 9.5 inch, 1.3 mega-pixel low temperature poly-Si TFT-LCD fabricated by SPC of very thin films and an ECR-CVD gate insulator

Abstract

A unique combination of solid-phase crystallization (SPC) and gate insulator technology has been used to fabricate low-temperature poly-Si TFTs (thin-film transistors). Using this technology, a high-resolution 9.5-in TFT-LCD (liquid crystal display) with 1.3 mega-pixels has been realized. SPC has allowed the formation of poly-Si TFTs with both lower OFF currents and higher ON currents than as-deposited poly-Si TFTs, without sacrificing the latter's inherent advantages of uniformity and large area capability. Meanwhile, ECR-CVD (electron cyclotron resonance chemical vapor deposition) SiO/sub 2/ has allowed excellent control of the MOS interface and eliminates the need for hydrogenation.<>