{"title":"加工温度对有源矩阵lcd用多晶硅薄膜晶体管的影响","authors":"U. Mitra, B. Khan, M. Venkatesan, E. Stupp","doi":"10.1109/DISPL.1991.167471","DOIUrl":null,"url":null,"abstract":"The effect of processing conditions on polysilicon TFT (thin-film transistor) performance is explained. By careful selection of process techniques excellent devices are obtained, independent of processing temperature. It is possible to fabricate polysilicon TFTs at low temperature with performance comparable to that of high-temperature TFTs by replacing the high-temperature steps with low-temperature steps which have the same effect on the material and device structure. These TFTs are used in full-resolution LCDs (liquid crystal displays) for projection television.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of processing temperature on polysilicon thin film transistors for active matrix LCDs\",\"authors\":\"U. Mitra, B. Khan, M. Venkatesan, E. Stupp\",\"doi\":\"10.1109/DISPL.1991.167471\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of processing conditions on polysilicon TFT (thin-film transistor) performance is explained. By careful selection of process techniques excellent devices are obtained, independent of processing temperature. It is possible to fabricate polysilicon TFTs at low temperature with performance comparable to that of high-temperature TFTs by replacing the high-temperature steps with low-temperature steps which have the same effect on the material and device structure. These TFTs are used in full-resolution LCDs (liquid crystal displays) for projection television.<<ETX>>\",\"PeriodicalId\":399708,\"journal\":{\"name\":\"Conference Record of the 1991 International Display Research Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1991 International Display Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DISPL.1991.167471\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1991 International Display Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DISPL.1991.167471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of processing temperature on polysilicon thin film transistors for active matrix LCDs
The effect of processing conditions on polysilicon TFT (thin-film transistor) performance is explained. By careful selection of process techniques excellent devices are obtained, independent of processing temperature. It is possible to fabricate polysilicon TFTs at low temperature with performance comparable to that of high-temperature TFTs by replacing the high-temperature steps with low-temperature steps which have the same effect on the material and device structure. These TFTs are used in full-resolution LCDs (liquid crystal displays) for projection television.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
