T. Little, H. Koike, K. Takahara, T. Nakazawa, H. Ohshima
{"title":"一个9.5英寸，130万像素低温多晶硅TFT-LCD，由非常薄的薄膜和ECR-CVD栅极绝缘体制成","authors":"T. Little, H. Koike, K. Takahara, T. Nakazawa, H. Ohshima","doi":"10.1109/DISPL.1991.167474","DOIUrl":null,"url":null,"abstract":"A unique combination of solid-phase crystallization (SPC) and gate insulator technology has been used to fabricate low-temperature poly-Si TFTs (thin-film transistors). Using this technology, a high-resolution 9.5-in TFT-LCD (liquid crystal display) with 1.3 mega-pixels has been realized. SPC has allowed the formation of poly-Si TFTs with both lower OFF currents and higher ON currents than as-deposited poly-Si TFTs, without sacrificing the latter's inherent advantages of uniformity and large area capability. Meanwhile, ECR-CVD (electron cyclotron resonance chemical vapor deposition) SiO/sub 2/ has allowed excellent control of the MOS interface and eliminates the need for hydrogenation.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 9.5 inch, 1.3 mega-pixel low temperature poly-Si TFT-LCD fabricated by SPC of very thin films and an ECR-CVD gate insulator\",\"authors\":\"T. Little, H. Koike, K. Takahara, T. Nakazawa, H. Ohshima\",\"doi\":\"10.1109/DISPL.1991.167474\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A unique combination of solid-phase crystallization (SPC) and gate insulator technology has been used to fabricate low-temperature poly-Si TFTs (thin-film transistors). Using this technology, a high-resolution 9.5-in TFT-LCD (liquid crystal display) with 1.3 mega-pixels has been realized. SPC has allowed the formation of poly-Si TFTs with both lower OFF currents and higher ON currents than as-deposited poly-Si TFTs, without sacrificing the latter's inherent advantages of uniformity and large area capability. Meanwhile, ECR-CVD (electron cyclotron resonance chemical vapor deposition) SiO/sub 2/ has allowed excellent control of the MOS interface and eliminates the need for hydrogenation.<<ETX>>\",\"PeriodicalId\":399708,\"journal\":{\"name\":\"Conference Record of the 1991 International Display Research Conference\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1991 International Display Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DISPL.1991.167474\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1991 International Display Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DISPL.1991.167474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 9.5 inch, 1.3 mega-pixel low temperature poly-Si TFT-LCD fabricated by SPC of very thin films and an ECR-CVD gate insulator
A unique combination of solid-phase crystallization (SPC) and gate insulator technology has been used to fabricate low-temperature poly-Si TFTs (thin-film transistors). Using this technology, a high-resolution 9.5-in TFT-LCD (liquid crystal display) with 1.3 mega-pixels has been realized. SPC has allowed the formation of poly-Si TFTs with both lower OFF currents and higher ON currents than as-deposited poly-Si TFTs, without sacrificing the latter's inherent advantages of uniformity and large area capability. Meanwhile, ECR-CVD (electron cyclotron resonance chemical vapor deposition) SiO/sub 2/ has allowed excellent control of the MOS interface and eliminates the need for hydrogenation.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
