High mobility cadmium selenide transistors

Abstract

Field-effect mobilities in excess of 450 cm/sup 2/ V/sup -1/ s/sup -1/ are reported in CdSe TFTs (thin-film transistors) using a maximum process temperature of 400 degrees C. Devices with channel lengths, ranging from 5 mu m to 30 mu m with aspect ratios of 0.5 to 40 were prepared. The transfer characteristics are very steep with a gate voltage swing of approximately 15 V, giving a switching ratio of >10/sup 9/ with an off current of <10/sup -14/ A/square which is relatively insensitive to the drain voltage. Comparisons between circuit simulations using HSPICE and experimental results are shown.<>