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2012 5th International Conference on Computers and Devices for Communication (CODEC)最新文献

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A simple method to avoid interference of unwanted mode during tuning of a cavity resonator 一种在腔腔谐振器调谐过程中避免不需要模式干扰的简单方法
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509284
S. Mondal, S. K. Biswas
{"title":"A simple method to avoid interference of unwanted mode during tuning of a cavity resonator","authors":"S. Mondal, S. K. Biswas","doi":"10.1109/CODEC.2012.6509284","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509284","url":null,"abstract":"When we tune a microwave cylindrical cavity resonator by varying its length with the help of a moving plunger, resonant frequencies of different modes may overlap to each other causing a noise problem. So, tunable range is influenced by the frequency overlapping of different modes. In this paper we describe a simple but effective method to increase the tunable range of a particular mode of a cylindrical cavity resonator. For this purpose we use a curved wall instead of a plane one as the moving wall to vary the length of the cylindrical cavity. Observations have been made with the help of HFSS.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133197885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transformer coupled novel noise cancellation technique for subthreshold UWB LNA 亚阈值UWB LNA变压器耦合降噪新技术
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509213
A. Kumar, A. Dutta, S. G. Singh
{"title":"Transformer coupled novel noise cancellation technique for subthreshold UWB LNA","authors":"A. Kumar, A. Dutta, S. G. Singh","doi":"10.1109/CODEC.2012.6509213","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509213","url":null,"abstract":"In this paper, a transformer coupled noise cancellation technique for subthreshold Ultra Wide Band (UWB) Low Noise Amplifier (LNA) is presented. This introduces a novel noise cancellation technique with current reuse topology and transformer coupling for better noise and gain performance. Moreover power consumption is considerably reduced by biasing both (two) stages in subthreshold region. This circuit is designed in UMC180nm process and simulated using SpectreRF simulator. This circuit achieved a maximum gain of 14dB and noise figure of 3.6dB over the 3dB bandwidth of 2.4-6GHz. This consumes 1.48mW of DC power from 1.5V supply. Hence the proposed circuit is very useful for WSN applications in ISM (2.4GHz) band and Ultra Wide Band (UWB) group I & II.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133461966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Voltage-fed trans Z source inverter in PV solar panel PV太阳能板中电压馈电反Z源逆变器
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509220
A. Mehdipour, H. Majdinasab, H. Khazraj, A. V. Kumar
{"title":"Voltage-fed trans Z source inverter in PV solar panel","authors":"A. Mehdipour, H. Majdinasab, H. Khazraj, A. V. Kumar","doi":"10.1109/CODEC.2012.6509220","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509220","url":null,"abstract":"This paper extends the impedance-source (Z-source) inverters concept to the transformer based Z-source (transSource) inverters in PV solar panels. In PV system MPPT controller is implemented best output of the solar panels. The voltage fed Trans z source is going to be used to convert solar output voltage DC to AC voltage. In this paper sinusoidal pulse width modulation is used to control the switches. Trans z source inverter introduced in this section, it is the arrangement of the two capacitors & one transformer. While maintaining the main features of the previously presented Z-source network, the new networks exhibit some unique advantages, such as the increased voltage gain and reduced voltage stress in the voltage-fed trans-ZSI. the simulation results for the voltage fed PV system are presented for analysis.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122021542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Estimation of process-induced variations in double-gate junctionless transistor 双栅无结晶体管工艺诱导变化的估计
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509298
R. K. Baruah, R. Paily
{"title":"Estimation of process-induced variations in double-gate junctionless transistor","authors":"R. K. Baruah, R. Paily","doi":"10.1109/CODEC.2012.6509298","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509298","url":null,"abstract":"In this paper, the impact of process induced variations on the electrical characteristics of a junctionless symmetric double-gate transistor (DGJLT) is reported for the first time. The process parameters considered here are gate length (L), thickness of silicon film (Tsi) and gate oxide thickness (Tox). The impact of these process parameters on the electrical parameters viz., ON current, threshold voltage (VT) and subthreshold slope (SS) are systematically investigated with the help of extensive device simulations and compared with conventional symmetric doublegate transistor (DGMOS). It is seen that ON current variation with silicon thickness is higher for DGJLT compared to DGMOS. Threshold voltage of DGJLT is more sensitive to silicon thickness and gate oxide thickness as compared to DGMOS. The overall SS variation is negligible in DGJLT compared to DGMOS.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123890760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Retrieval of hidden infected region using biomedical image watermarking for tele-diagnosis to ensure better treatment 利用生物医学图像水印提取隐藏感染区域进行远程诊断，保证更好的治疗
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509362
K. Pal, G. Ghosh, M. Bhattacharya
{"title":"Retrieval of hidden infected region using biomedical image watermarking for tele-diagnosis to ensure better treatment","authors":"K. Pal, G. Ghosh, M. Bhattacharya","doi":"10.1109/CODEC.2012.6509362","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509362","url":null,"abstract":"A new type of biomedical image watermarking scheme is introduced through this paper for better tele-diagnosis and tele-surgery that can enhance the security of modern health care system. Here effected region from MRI image is separated and highlighted though a combination of region growing algorithm and contour detection which is then embedded in the scanned image itself for a secure transmission to the remote location for tele-diagnosis. The quality of the proposed embedding and recovery process is also supported by some image quality metrics to ensure the robustness and strength of the proposed of biomedical image watermarking technique.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129090112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design of multifunction biquad structure using OTA 基于OTA的多功能自行车结构设计
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509273
M. Bhanja, K. Ghosh, B. Ray
{"title":"Design of multifunction biquad structure using OTA","authors":"M. Bhanja, K. Ghosh, B. Ray","doi":"10.1109/CODEC.2012.6509273","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509273","url":null,"abstract":"In this paper, design methodology of programmable biquad OTA-C filter is presented. Biquadratic structure is realized with OTA, resistor and capacitor. The circuit realizes all types filter i.e. low-pass, high-pass, band-pass, band-reject and all-pass only by configuring the input combinations. All the filter responses are validated with SPICE simulation.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126340943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
On the impact of node failure on network coverage in wireless sensor network 无线传感器网络中节点故障对网络覆盖的影响
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509353
A. Hossain
{"title":"On the impact of node failure on network coverage in wireless sensor network","authors":"A. Hossain","doi":"10.1109/CODEC.2012.6509353","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509353","url":null,"abstract":"Network coverage of wireless sensor network (WSN) means how well the entire area of interest is being monitored by a deployed network. It depends on several factors including sensing model of a node. Node failure is an important issue in WSN. The sensor nodes are prone to be non-functional due to noise and battery energy depletion. In the literature, node failure has not been considered while studying coverage. In this paper, we investigate the impact of node failure on network coverage. The network coverage has been derived for three sensing models in the event of node failure.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"404 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121004299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of strain on the band offsets of III-V quantum wells: InXGa1−XP/GaAs, InXGa1−XAs/ Al0.2Ga0.8As and InXGa1−XN/GaN 应变对III-V量子阱:InXGa1−XP/GaAs、InXGa1−XAs/ Al0.2Ga0.8As和InXGa1−XN/GaN的能带偏移的影响
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509295
T. Das, S. Panda, P. Bera, D. Biswas
{"title":"Effect of strain on the band offsets of III-V quantum wells: InXGa1−XP/GaAs, InXGa1−XAs/ Al0.2Ga0.8As and InXGa1−XN/GaN","authors":"T. Das, S. Panda, P. Bera, D. Biswas","doi":"10.1109/CODEC.2012.6509295","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509295","url":null,"abstract":"Advantageous changes in the optoelectronic properties of strained III-V compound semiconductor quantum wells (QWs) have made them important. In this paper we report the results of our experimental and theoretical studies on, how the important parameter, band offset, changes with strain for In<sub>X</sub>Ga<sub>1-X</sub>P/GaAs, In<sub>X</sub>Ga<sub>1-X</sub>As/Al<sub>0.2</sub>Ga<sub>0.8</sub>As and In<sub>X</sub>Ga<sub>1-X</sub>N/GaN QWs.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115594656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of substrate induced strained-Si/SiGe channel for optimizing CMOS digital circuit characteristics 衬底诱导应变si /SiGe通道优化CMOS数字电路特性的研究
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509274
S. Sen, S. Chattopadhyay, B. Mukhopadhyay
{"title":"Study of substrate induced strained-Si/SiGe channel for optimizing CMOS digital circuit characteristics","authors":"S. Sen, S. Chattopadhyay, B. Mukhopadhyay","doi":"10.1109/CODEC.2012.6509274","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509274","url":null,"abstract":"In this work, the prospect of designing CMOS based digital electronic circuits incorporating strained-Si/Si1-xGex MOSFETs is studied. The fundamental drawback in designing CMOS digital circuits is the compulsion of maintaining a larger width of the p-MOS in respect to its n-MOS counterpart. This is due to the fact that the hole and electron mobilities are not equal. The scale factor of the p-MOS transistor, however, depends on whether the circuit is optimized for robustness or high speed; the choice of one obviously compromises the other performance metric. In this context, incorporation of a strained-Si p-MOS in such a circuit is expected to improve the performance in terms of speed as well as noise margin. We have analyzed the characteristics of CMOS inverters using a combination of strained-Si p- and conventional-Si n- channel CMOS inverters for different compositions of Ge in the virtual substrate (VS) and have determined that the two conflicting scaling requirements can converge when the Ge content in VS is ~ 40%.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"77 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113939591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Equivalent circuit model of UTC photodiode UTC光电二极管等效电路模型
2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI: 10.1109/CODEC.2012.6509315
A. Barman, Senjuti Khanra
{"title":"Equivalent circuit model of UTC photodiode","authors":"A. Barman, Senjuti Khanra","doi":"10.1109/CODEC.2012.6509315","DOIUrl":"https://doi.org/10.1109/CODEC.2012.6509315","url":null,"abstract":"In this work we have examined different characteristics of uni travelling carrier (UTC) photodiode (PD) by mathematical modeling of the device. Based on the basic circuit elements contain in the mathematical model, an equivalent circuit model of UTC-PD is developed. The frequency response and pulse photocurrent response agrees well with reported data. To the authors believe such kind of circuit model of UTC photodiode has not been reported elsewhere. The influences of different parameters and device mounting parasitic effects on frequency response have been investigated. Such simplified circuit model will be helpful in predicting different characteristics of UTC photodiode before fabrication.","PeriodicalId":399616,"journal":{"name":"2012 5th International Conference on Computers and Devices for Communication (CODEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115355519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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