应变对III-V量子阱:InXGa1−XP/GaAs、InXGa1−XAs/ Al0.2Ga0.8As和InXGa1−XN/GaN的能带偏移的影响

2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI:10.1109/CODEC.2012.6509295

T. Das, S. Panda, P. Bera, D. Biswas

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引用次数: 0

摘要

应变III-V型化合物半导体量子阱(QWs)光电特性的有利变化使它们变得重要。本文报道了对InXGa1-XP/GaAs、InXGa1-XAs/Al0.2Ga0.8As和InXGa1-XN/GaN量子阱中重要参数频带偏移随应变变化的实验和理论研究结果。

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Effect of strain on the band offsets of III-V quantum wells: InXGa1−XP/GaAs, InXGa1−XAs/ Al0.2Ga0.8As and InXGa1−XN/GaN

Advantageous changes in the optoelectronic properties of strained III-V compound semiconductor quantum wells (QWs) have made them important. In this paper we report the results of our experimental and theoretical studies on, how the important parameter, band offset, changes with strain for In_XGa_1-XP/GaAs, In_XGa_1-XAs/Al_0.2Ga_0.8As and In_XGa_1-XN/GaN QWs.

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2012 5th International Conference on Computers and Devices for Communication (CODEC)

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