Effect of strain on the band offsets of III-V quantum wells: InXGa1−XP/GaAs, InXGa1−XAs/ Al0.2Ga0.8As and InXGa1−XN/GaN

Abstract

Advantageous changes in the optoelectronic properties of strained III-V compound semiconductor quantum wells (QWs) have made them important. In this paper we report the results of our experimental and theoretical studies on, how the important parameter, band offset, changes with strain for In_XGa_1-XP/GaAs, In_XGa_1-XAs/Al_0.2Ga_0.8As and In_XGa_1-XN/GaN QWs.