Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics最新文献

{"title":"Enhanced Dry-etched Mirror Process For High-speed And Monolithically Integrated GaAs-based MQW Lasers","authors":"J. Ralston, K. Eisele, R. E. Sah, S. Burkner, J. Fleissner, K. Bender, E. Larkins, S. Weisser","doi":"10.1109/LEOSST.1994.700539","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700539","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130117863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deposition Condition Dependence Of Silicon Nitride Used As A Diffusion Barrier During MBE Growth Of III-Vs On Silicon VLSI Electronics","authors":"J. A. Walker, K. Goossen, J. Cunningham, W.Y. Ian","doi":"10.1109/LEOSST.1994.700542","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700542","url":null,"abstract":"During the heteroepitaxy of GaAs on CMOS devices, it is necessary to protect the silicon dioxide from gallium, which diffuses readily into SiO2. We have found that such diffusion results in a conductive oxide. Since it has been shown previously that silicon nitride inhibits the diffusion of gallium [ 11, it was used here as the diffusion barrier during MBE growth. In order for the nitride to be successfully used for this purpose however, it must have sufficient resistance to hydrofluoric acid (HF) used to clean the silicon surface prior to growth. In addition, it must be mechanically robust enough to undergo a high temperature (900 \"C) oxide desorption step necessary for the successful epitaxy of GaAs on Si without cracking or losing adhesion. The latter is especially critical for sub-micron CMOS, which utilizes a reflowable glass (at 850 \"C) to round the edges of the contact holes. We have found that this liquificatioii of the reflow glass places a large stress on the nitride diffusion barrier. We have determined that the conditions during the plasma enhanced chemical vapor deposition (PECVD) of silicon nitride are critical to the ability of the nitride to fulfill both of the above requirements, and they are discussed here. A cross-section of the MOSFET structure just prior to MBE growth is shown in Figure 1. The CMOS fabrication was done in (100) silicon oriented 3\" off axis toward the (1 10) as required for high quality GaAs growth on silicon [2]. Due to the high temperatures involved with MBE, it was necessary to perform growth just prior to first level metalization. In submicron CMOS technology such as that used here, the topmost film in the field oxide dielectric structure is required to be a reflowable glass such as phosphosilicate glass or BPTEOS, which has a lower melting point than that of standard Si02. The purpose of the reflow glass is to allow the rounding of the top comers of the contact holes to ensure good step coverage during the metalization of the transistors. This rounding is achieved through a heat treatment at 800-850 OC after the contact holes are opened through the dielectrics [3]. Our wafers were then passivated with a standard PECVD silicon nitride deposited using ammonia and silane. Bare silicon areas for MBE growth were opened by reactive ion etching through the dielectric stack of Si02, reflow glass, and silicon nitride, followed by a specialized wet chemical clean [4] including the use of HF acid in order to prepare the exposed silicon surface for growth. The first step in the growth sequence is the removal of the native oxide which forms on the surface of the open areas of silicon by means of a 900-950 \"C oxide desorption done under vacuum in the MBE chamber. Once the oxide is removed, the epitaxial films are grown from which the GaAs/AlGaAs multiple quantum well modulators are formed. The details of this growth are given in a separate publication [5]. When using the standard nitride films from the CMOS foundry, it","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129395411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reproducible MBE Growth Of Asymmetric Fabry-Perot SEED's","authors":"L. D’asaro, S. Pei, J. Kuo, G. Livescu, R. Leibenguth","doi":"10.1109/LEOSST.1994.700550","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700550","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124587525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Accessible Tuning Range Of Direct Intensity Modulated Three-section DBR Lasers","authors":"J. Cartledge","doi":"10.1109/LEOSST.1994.700517","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700517","url":null,"abstract":"A variety of optical network architectures utilize wavelength division multiplexing (WDM) to access the bandwidth of single-mode optical fiber and provide network functions such as routing, switching and service segregation. Distributed Bragg reflector (DBR) lasers are well suited to applications which require tuning to a few wavelengths, as the distinct longitudinal modes obtained by changing the Bragg section current can be utilized 111-[2]. In this paper, the portion of the CW mode tuning curve which provides reliable performance using direct modulation of the active section is determined experimentally for WDM systems based on tunable fiber Fabry-Perot optical filters. The results are useful for determining procedures and requirements for the characterization of individual lasers in WDM systems. Fig. 1 illustrates the CW tuning curve for a three-section DBR laser (GEC-Marconi LD5231) as a function of the Bragg section current for an active section current of 50 mA and a phase section current of 0 mA. The discontinuous tuning range is 8.3 nm for a 50 mA change in the Bragg section current. The dependence of the CW mode suppression ratio (MSR) on the Bragg section current is shown in Fig. 2. Within the central region of individual mode tuning curves, the MSR is typically greater than 32 dBc. In the vicinity of a mode jump, the MSR degrades and becomes a ratio between adjacent longitudinal modes [3]. The active section of the DBR laser was modulated using a 1 Gb/s, 215 1 PRBS NRZ signal. The modulated tuning curve is virtually identical t o the CW tuning curve. The modulated MSR is illustrated in Fig. 3 as a function of the Bragg section current. Within the central regions of the mode tuning curves, the modulated MSR is within 2 dB of the CW MSR. However, in the vicinity of a mode jump, the modulated MSR typically degrades to less than 2 dBc. The bit error ratio (BER) was measured using a fiber Fabry-Perot optical filter with a bandwidth of 14 GHz to perform the wavelength division demultiplexing function required in a practical WDM system. The filtered optical signal was detected by a p-i-n/FET front-end, amplified, and lowpass filtered. The dependence of the BER on the Bragg section current is shown in Fig. 4. Two curves are associated with each individual mode tuning curve (except for the modes corresponding to Bragg section currents of 0 mA and 50 mA). The two curves illustrate the beginning and end of reliable performance (BER < lO'O) as the Bragg section current spans a mode tuning curve. To clarify the presentation of the results, alternate modes are represented by dashed lines with square symbols and solid lines with circular symbols. The BER changes by almost five orders of magnitude for a change in the Bragg section current of 0.1 mA to 0.5 mA depending on the longitudinal mode. The portions of individual CW mode tuning curves which provide reliable performance under direct modulation correspond quite strongly to modulated MSR values e","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128863635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal Stability Of Wavelength Division Multiplexers With 20 Channels Spaced At INM","authors":"J. Laude, J.C. Gautherin, I. Long, D. Fessard","doi":"10.1109/LEOSST.1994.700490","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700490","url":null,"abstract":"Thermal Stability of Wavelength Division Multiplexers with 20 Channels Spaced at 1NM J. P. Laude, J. C. Gautherin, I. Long, D. Fessard, ZSA , Jobin Yvon, France Monoblock components using all single mode fibers with lnm wavelength spacing from 1540 nm to 1559 nm were manufactured. Between -20°C and + 60°C the wavelength stability was 0.0 12 and 0.0004 nm/\"C for components respectively non thermocontroled and thermocontroled. The absolute wavelength of each channel can be specified within +-.03 nm at a given temperature.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120968899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si/PLZT Smart Spatial Light Modulator Consisting Of Direct-bonded Driver Circuit And Flip-chip Bonded Processor","authors":"M. S. Jin, J.H. Wang, S. Patra, N. Mauduit, G. Lu, V. Ozguz, S.H. Lee","doi":"10.1109/LEOSST.1994.700440","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700440","url":null,"abstract":"Si/PLZT Smart spatial light modulators (S-SLM’s) offer potential benefits due to the maturity of silicon technologies and the high-speed high-contrast optical modulation capability of PLZT. The voltage incompatibility between the driver circuit (operating at 2 20 V) required to drive the PLZT modulators and logic circuits (operating at 5 V) can be eliminated by physically separating the two circuits as illustrated in Fig. 1. The MOS-transistor driver circuit is fabricated on a siliconon-insulator (SOI) silicon wafer. The device layers (-2.0 pm thick) is isolated by back-etching the Si substrate away. The isolated device layer is then bonded and connected to a PLZT substrate where the modulators are formed. A foundry processed silicon chip which contains the logic processing circuits and detectors for the optical input is flip-chip bonded to the modulator assembly to finalize the Si/PLZT S-SLM. We first applied direct bonding technology to realize an 8 x 8 array of individually addressable SLM shown in photomicrograph in Fig. 2 (a) (b). Each cell in this array contains an individually-addressable driver circuit (0 20 V output) controlled with a 0 5 V input signal. Since the direct-bonding step is applied after the circuits have been fabricated, any conventional Si processing step may be applied during the circuit fabrication. We have also demonstrated that the direct bonding techniques can be applied to large areas (> 100 “2) with high yields.’-2 In order to endow the pixels with more “smart” functionality, two foundry-processed chips (see photomicrographs in Figs. 3(a) (b)) were flip-chip bonded to separate direct-bonded Si / PLZT SLM structures as a second step. In addition to the logic circuits, these chips also contain arrays of Si detector and supporting circuit, such as signal amplifiers, to add optical input capability to the smart pixels. One of the chips is intended for data processing applications and performs the primitive function for pattern matching. The other chip is designed for multiprocessor interconnection networks and ATM switching and performs controlled routing of multiple inputs to multiple outputs. Characterization of the resultant S-SLM’s will be presented at the conference. This technology combining foundry-processed logic chips with PLZT modulators offers a unique way to realize S-SLM’s with high optical performance and complex logic functionality.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127082484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reproducible Growth Of High Quality Lattice Matched Gainasp On InP By Solid Source MBE Using Phosphorus And Arsenic Valved Cracking Cells","authors":"J. Baillargeon, A. Cho, R. Fischer","doi":"10.1109/LEOSST.1994.700532","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700532","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125213851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integrated Optoelectronic Components For Optical Storage And Consumer Applications","authors":"S. Miyaoka","doi":"10.1109/LEOSST.1994.700425","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700425","url":null,"abstract":"The continuously expanding compact disk market and the rapidly growing Mini-disk [l] market have stimulated the replacement of optical elements by monolithic or hybrid integrated optics in optical pickups. The compactness and mass-production capability of integrated optics make them particularly attractive for consumer applications. A good example of an integrated optical device that has been introduced into an optical pickup is the compact (6.5x6.5x1.7mm3) pickup of the 'Jacket Discman' [2], a 14.8\"-thick pocket compact disk (CD) player. The major development in this pickup was the so called 'Laser Coupler (LC)'. The LC consists of a laser diode (LD) submount and a 1.5xl.Ox0.6mm3 beamsplitting micro-prism both precisely bonded on a Si substrate. The micro-prism is now fabricated with advanced glass molding technology, while the laser diode submount consists of a smaller Si substrate containing a monitor photo-diode (PD) and the laser diode. The main Si substrate contains PIN PD's which formed with built-in preamplifiers and additional circuitries for RF and servo error signals detection. Integrating many functions in only three main parts has considerably reduced total assembly time, thereby cost and enhanced reliability.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129056111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TBONE: TestBed For all-Optical NEtworking","authors":"L. McAdams, I. Richer, S. Zabele","doi":"10.1109/LEOSST.1994.700491","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700491","url":null,"abstract":"The TBONE project is an ARPA-sponsored three-,year collaborative effort between MITRE, Optivision, and TASC. The objectives of the project are twofold: to implement and demonstrate a switched all-optical, multi-user image communications network in an applications environment, and to provide a testbed for developing and demonstrating optical network protocols, and other optical network technology. The testbed network will comprise two optical crossbar switches and two full-duplex single mode dark fiber links spanning the -20km distance between TASC and MITRE. High performance workstations and image servers at the two sites will be linked by the network (see Figure 1).","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129176474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-latency Soliton Logic Gate In EDFA's","authors":"G. Williams, K. Ahn, B. Barnett, M.N. Islam","doi":"10.1109/LEOSST.1994.700507","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700507","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133531169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}