Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics最新文献

{"title":"Adaptive Attenuating Spatial Light Modulator","authors":"I. Bar-Tana, K. Johnson","doi":"10.1109/LEOSST.1994.700443","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700443","url":null,"abstract":"An optically addressed, optical relaying device placed between crossed polarizers utilizes an array of pixels made up of photodetectors, circuitry, and modulating pads, and an analog liquid crystal to modulate the intensity of an optical signal on a pixel by pixel basis. The photodetector generates a current proportional to the light detected. Once the current exceeds a certain level, the circuitry stores a charge on the modulating pad proportional to the photo-induced current. This stored charge rotates the molecules of the liquid crystal thereby rotating the polarization of the light signal. The output polarizer then attenuates the light beam according to the change in polarization.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116769551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithic Binary Optical Logic Gates With Programmable Optical Routing","authors":"J. Cheng, B. Lu, J. Zolper, K. Lear, J. Klemm","doi":"10.1109/LEOSST.1994.700417","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700417","url":null,"abstract":"We describe a switching technology that performs both optical logic and the spatial routing functions in a dynamically reconfgurable manner, which provides the basis for a programmable optical logic architecture. Cascadable arrays of binary optical switches that integrate vertical-cavity surfaceemitting lasers (VCSELs) with heterojunction phototransistors (HPTs) and photothyristors (PNPNs) can perform optical routing, optical logic, and fan-out reconfigurably at high speed. Eficient, non-latching HF'TNCSEL switches as well as latching PNPNNCSEL switches have been used to perform single-stage optical logic functions,1 including AND, OR, INVERT, NAND, NOR, and XOR. Although more complex Boolean functions can be derived by cascading sequential logic gate arrays, the process is difficult and is hardware-intensive. An alternative approach is to design an optical logic gate array that can be reconfigured and thus be used repeatably to perform sequential logic operations using the same hardware. Gate level reconfigurability allows each array to be re-used to perform different logic and routing functions during successive operations. By buffering the optical outputs of the previous stage while the array is reconfgured, a single logic array can perform the entire process sequence. To implement a cascadable, programmable, and thus reusable optical logic gate array, the spatial routing and logic functions must be integrated. For example, a Boolean function can be expressed in the sum of products form, using dual-rail logic inputs and the AND and OR logic functions. This is illustrated for the simple two-input case in Fig. l(a), which shows the routing and logic functions required in the 3-stage min-term generation process. Its optoelectronic implementation is also shown in Fig. l(a), which uses three sequential logic arrays each containing HPTNCSEL binary optical switchc:s2 with shufne routing interconnections. Figure l(b) shows three of the common gate-level operations involved: optical routing, fan-out, and logic. Since all three stages are identical except for the routing paths, they can be implemented using a single array by programming the control voltages to select the active nodes, the routing paths, and the fan-out of each stage. Reconfigurability allows a single programmable optical logic gate array (OPLA) to be used, provided that the optical outputs of the previous stage are buffered by an optical buffer memory array (OMA). The design and layout of the basic 2x2 binary optical logic gate (2 inputs, 2 outputs) are shown in Fig. l(c) and 2(b), respectively. The switch concatenates two nodes, each of which contains a segmented HPT and a VCSEL. Every HPT is connected to two VCSELs (at least one of which is associated with another node), and each VCSEL is likewise connected to two different HPTs. The pairing or interconnection of nodes defines a logc gate as well as the routing paths. Each HPT segment is controlled by a bias voltage (Vi or V2) and is ","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115129970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The State Of Blue/green ZnSe-based Laser Diodes","authors":"R. Gunshor, A. Nurmikko, J. Han, A. Salokatve","doi":"10.1109/LEOSST.1994.700547","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700547","url":null,"abstract":"We will describe a CW room temperature laser diode employing Zn(Se,Te) graded contacts to p-ZnSe, and having a threshold below 30mA at 6.8V.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"575 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123072565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metalorganic Vapor Phase Epitaxial Growth Of Red And Infrared Vertical-cavity Surface-emitting Laser Diodes","authors":"R. P. Schneider, K. Lear, K. Choquette, M. Crawford, K. Killeen, S. Kilcoyne, J. Figiel","doi":"10.1109/LEOSST.1994.700529","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700529","url":null,"abstract":"Abstract Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125846215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chemical Beam Etching With Monolayer Control","authors":"W. Tsang, R. Kapre, T. Chiu, M.D. Williams, J. F. Ferguson","doi":"10.1109/LEOSST.1994.700538","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700538","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125882699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical Interconnection Between Flip-chip Bonded Photodiodes And Optical Polyimide Waveguides On An Opto-electronic Multichip Module","authors":"H. Takahara, S. Matsui, S. Koike","doi":"10.1109/LEOSST.1994.700433","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700433","url":null,"abstract":"An opto-electronic multichip module (OE-MCM) has been developed for high speed and wide-band communication systems(1). In this work, the opto-electronic performance for the interconnection between flip-chip bonded photodiodes (PDs) and fluorinated polyimide waveguides on the OE-substrtate is studied. A 3.5 GHzbandwidth response of the interconnection was achieved by using total internal reflection (TIR) mirrors. Low loss (0.4 dB/cm at a 1.3,U m wavelength) polyimide waveguides (50 f l m wide and 87.5 p m high) were fabricated on a copper-polyimide multilayer substrate by using a conventional MCM process and reactive ion etching(2) (3). The waveguide-to-PD interconnection is attained by using a TIR mirror fabricated at the edge of the waveguides, while tilting the OE-substrate to the normal direction of the cathode. The mirror angle was easily determined to be 44.5\" from the radiated reflection-beam angle by using the far-field pattern method. The reflection loss of the mirror is less than 1.5 dB at a 1.3-,U m wavelength. An InP PD was easily flip-chip bonded with conventional Sn/Pb (60/40) solder balls positioned in the solder ball guides. The propagated light in the waveguide is totally reflected by the mirror. The bandwidth was measured while propagating the light using a heterodyne optical sweeper (1.55-,U m wavelength). The output of the PD was connected directly to a component analyzer. The frequency response of the PD with a sensitive diameter of 80 p m is shown in Fig. 4. bandwidth was determined to be 3.5 GHz, being limited by the PD response. This optical interconnection will therefore be useful in developing high speed and wide-band OE-MCMs. A schematic representation of the OE-MCM is shown in Fig. 1.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116458948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Progress Toward Ultrahigh-bit-rate All-optical TDM Transmission Systems","authors":"M. Saruwatari","doi":"10.1109/LEOSST.1994.700506","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700506","url":null,"abstract":"A b s t ra c t -The re('cn I progress t owu i d ltlr ru/(i SI opl'icu 1 ,fihi> r t ru nsni ission systems employing a I 1 opticul lime-domnin n7idtiple.xiti~ (7DM) frclriiiqrre.z is reviewed. 0utlinc.s of (he latest I00Ghitl.s transnzission experiments und lhci ri~lutecl Icc.hno1ogie.r are de.vc,rihed including state-of-the-art performuni'es arulBiture prospects. All-optical time-domain signal processing technologies are now being developed for realizing ultrahigh-bit-rate optical time-division-multiplexing (TDM) transmission systems [ 1-51. The major technologies include high-speed picosecond optical pulse generation [6-81, all-optical multi/demultiplexing (MUX/DEMUX) [9171, linear or soliton pulse transmission, and optical timing extraction techniques [4,18-24]. Here, recent progress on very high-speed optical TDM transmission up to 100Gbit/s is introduced together with the essentiial technologies. Figure 1 depicts the experimental setup of the latest lOO-Gbit/s transmission experiment over 200 km that uses newly developed optical TDM technologies [4]. A wavelength-tunable mode-locked Er fiber laser (ML-EDFL) [8] provides stable 6.3-GHz, :3.5 ps transform-limited (TL) pulses for external modulation (2\"-1, PRBS) by a LiNb03 modulator. A 16:l planar lightwave circuit (PLC) multiplexer stably multiplexes the baseline 6.3 Gbit/s signal into 100 Gbit/s. The TDM IOO-Gbit/s signal is then transmitted through five fibers connected via four in-line Ed-doped fiber amplifiers. The center wavelength of the ML-EDFL is set to the zero dispersion wavelength of the 200 km fiber. At the receiver side, a novel timing extraction phase-locked loop (PLL) [4] using a traveling-wave laser-diode amplifier (TW-LDA), used a$ a phase detector, extracts the prescaled clock of 6.3-GHz from the received 100-Gbit/s signal. Using the four-wave-mixing (FWM) process instead of gainmodulation as adopted in the previous PLL [ 221, very stable polarization-independent (PI) timing extraction is achieved with the lowered jitter of 0 . 3 ~ ~ . The extracted 6.3-GHz clock is used to drive both the all-optical DEMUX and the optical receiver. Finally, the novel PI-FWM demultiplexer (DEMUX) [ 171 using a polarization-maintaining 3 k.m fiber demultiplexes the 100Gbitls signal into the 6.3GbiUs original. With this configuration, a 100 Gbitls optical signal, 16 x 6.3-Gbit/s, has been successfully transmitted through a 200-km fiber without any polarization controllers. 6.3 G bivs 100 Gbit/s","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122954646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectronic Simulation At The Device And Circuit Level","authors":"J. Morikuni, S.M. Kang","doi":"10.1109/LEOSST.1994.700412","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700412","url":null,"abstract":"Device modeling for circuit simulation provides an essential coupling between new device development and its application toward systems integration. In the exploratory research and development environment, it is important to analyze the potential impact of new devices on systems performance by timely development of device models and circuit simulation capability. The conventional approach, which involves developing and coding new model equations into an existing circuit simulator, requires a significant amount of time not only for model development, but also for code debugging. SMILE (illinois Simulator for the Modeling of Integrated-circuit Level Elements) was created to overcome this bottleneck. iSMILE is a versatile “SPICE-like‘’ circuit simulator which allows for easy userdefinition of new circuit-level models [ 11. While a major portion of the program source code must be rewritten i n order to introduce a new device model into a conventional circuit simulator, with SMILE, implementation of a new model requires only the creation of a Fortran model input file (MIF) containing the circuit model topology and the device terminal characteristics. SMILE automatically generates source code internally to build simulation capability based on this model file. Once the new model has been added, it can be accessed at the input deck level like other standard devices such as the MOSFET and the BJT. In view of the fact that it can be used to easily implement new, user-defined models, iSMILE can be considered a superset of SPICE. The ease of new model implementation makes iSMILE ideal for simulating optoelectronic components for which new models have not yet been implemented in existing circuit simulators. In addition to models for conventional electronic devices (MOSFET, BJT, diode, etc.), we have implemented models for MSM photodetectors [2], multiple quantum-well laser diodes [3], and HEMTs 141 for use in optoelectronic circuit simulation. The MSM, laser diode and HEMT models have been successfully used in the design and simulation of several optoelectronic subsystems including both photoreceivers and transmitters. As an example, the equivalent-circuit model for the quantum-well laser diode is depicted in Figure I . This model is based on the well-known rate equations which describe the rates of change of the charge and photon density in the quantum well in terms of physical laser parameters:","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123600507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Very High-efficiency Transparent-substrate (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP Light-emitting Diodes","authors":"F. Kish, F. Steranka, D. Defevere, D. A. Vanderwater, K. Park","doi":"10.1109/LEOSST.1994.700527","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700527","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132060404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectronics For Broadband Infrastructure Technology","authors":"R. Leheny","doi":"10.1109/LEOSST.1994.700485","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700485","url":null,"abstract":"Optoelectronics for Broadband Infrastructure Technology R. E Leheny, ARPAIMTO, Arlington, VA Plans are evolving to meet the future needs of the National Information Infrastructure (NIT), and the role for optoelectronics technology in providing broadband network physical layer support is being defined. In this talk we will review the technology options available to meet NIT network needs and discuss research directions required to meet these needs.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129974012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}