Metalorganic Vapor Phase Epitaxial Growth Of Red And Infrared Vertical-cavity Surface-emitting Laser Diodes

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI:10.1109/LEOSST.1994.700529

R. P. Schneider, K. Lear, K. Choquette, M. Crawford, K. Killeen, S. Kilcoyne, J. Figiel

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引用次数: 15

Abstract

Abstract Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

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金属有机气相外延生长的红光和红外垂直腔表面发射激光二极管

摘要金属有机气相外延(MOVPE)用于垂直腔面发射激光器(VCSEL)二极管的生长。与更常用的分子束外延(MBE)技术相比，MOVPE表现出许多重要的优势，包括易于连续成分分级和低电阻p型分布布拉格反射器(DBRs)的碳掺杂，更快的吞吐量和更高的生长速率，以及更广泛的材料和掺杂选择。基于alainp /AlGaAs异质结构的平面增益制导红色VCSELs可在室温下发射连续波，电压阈值在2.5 ~ 3v之间，最大功率输出超过0.3 mW。顶发射红外(IR) vcsel具有最高的功率转换效率(21%)，最低的阈值电压(1.47 V)和最高的单模功率(来自8 μm器件的4.4 mW)。这些结果表明，MOVPE是这种重要的新型光子器件的首选生长技术。

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Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics

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