由直接键合驱动电路和倒装键合处理器组成的Si/PLZT智能空间光调制器

M. S. Jin, J.H. Wang, S. Patra, N. Mauduit, G. Lu, V. Ozguz, S.H. Lee
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引用次数: 0

摘要

由于硅技术的成熟和PLZT高速高对比度光调制能力,智能空间光调制器(S-SLM)提供了潜在的优势。驱动PLZT调制器所需的驱动电路(工作电压为220v)和逻辑电路(工作电压为5v)之间的电压不兼容可以通过物理分离这两个电路来消除,如图1所示。mos晶体管驱动电路是在硅绝缘体(SOI)硅片上制造的。器件层(-2.0 pm厚)通过反向蚀刻Si衬底分离。然后将隔离器件层粘合并连接到PLZT衬底上,在衬底上形成调制器。将包含逻辑处理电路和用于光输入的检测器的铸造厂加工硅芯片倒装到调制器组件上,最终完成Si/PLZT S-SLM。我们首先应用直接键合技术实现了一个8 × 8的可单独寻址的SLM阵列,如图2 (a) (b)的显微照片所示。该阵列中的每个单元包含一个可单独寻址的驱动电路(输出0 - 20v),由0 - 5v输入信号控制。由于直接键合步骤是在电路制造之后应用的,任何传统的硅处理步骤都可以在电路制造期间应用。我们还证明了直接键合技术可以应用于大面积(> 100“2”)且产量高。为了赋予像素更多的“智能”功能,作为第二步,两个代工厂加工芯片(见图3(a) (b)的显微照片)被倒装键合到单独的直接键合Si / PLZT SLM结构上。除了逻辑电路外,这些芯片还包含硅探测器阵列和支持电路,如信号放大器,以增加智能像素的光输入能力。其中一个芯片用于数据处理应用程序,并执行模式匹配的基本功能。另一个芯片设计用于多处理器互连网络和ATM交换,执行多输入到多输出的受控路由。所产生的S-SLM的特性将在会议上提出。该技术将代工加工逻辑芯片与PLZT调制器相结合,为实现具有高光学性能和复杂逻辑功能的S-SLM提供了一种独特的方式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Si/PLZT Smart Spatial Light Modulator Consisting Of Direct-bonded Driver Circuit And Flip-chip Bonded Processor
Si/PLZT Smart spatial light modulators (S-SLM’s) offer potential benefits due to the maturity of silicon technologies and the high-speed high-contrast optical modulation capability of PLZT. The voltage incompatibility between the driver circuit (operating at 2 20 V) required to drive the PLZT modulators and logic circuits (operating at 5 V) can be eliminated by physically separating the two circuits as illustrated in Fig. 1. The MOS-transistor driver circuit is fabricated on a siliconon-insulator (SOI) silicon wafer. The device layers (-2.0 pm thick) is isolated by back-etching the Si substrate away. The isolated device layer is then bonded and connected to a PLZT substrate where the modulators are formed. A foundry processed silicon chip which contains the logic processing circuits and detectors for the optical input is flip-chip bonded to the modulator assembly to finalize the Si/PLZT S-SLM. We first applied direct bonding technology to realize an 8 x 8 array of individually addressable SLM shown in photomicrograph in Fig. 2 (a) (b). Each cell in this array contains an individually-addressable driver circuit (0 20 V output) controlled with a 0 5 V input signal. Since the direct-bonding step is applied after the circuits have been fabricated, any conventional Si processing step may be applied during the circuit fabrication. We have also demonstrated that the direct bonding techniques can be applied to large areas (> 100 “2) with high yields.’-2 In order to endow the pixels with more “smart” functionality, two foundry-processed chips (see photomicrographs in Figs. 3(a) (b)) were flip-chip bonded to separate direct-bonded Si / PLZT SLM structures as a second step. In addition to the logic circuits, these chips also contain arrays of Si detector and supporting circuit, such as signal amplifiers, to add optical input capability to the smart pixels. One of the chips is intended for data processing applications and performs the primitive function for pattern matching. The other chip is designed for multiprocessor interconnection networks and ATM switching and performs controlled routing of multiple inputs to multiple outputs. Characterization of the resultant S-SLM’s will be presented at the conference. This technology combining foundry-processed logic chips with PLZT modulators offers a unique way to realize S-SLM’s with high optical performance and complex logic functionality.
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