Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics最新文献_第3页

Optoelectronic Circuits And Smart Pixels Which Use Asynchronous Reset On Every Bit For Input Contentionless Switching (AROEBICS) 采用每位异步复位实现输入无竞争切换的光电电路和智能像素

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700450

L. Chirovsky, G. Livescu, G. Boyd, T. K. Woodward, R. A. Novotny, A. Lentine

引用次数: 0

Measuremeni Of Sidewall Roughness Of InP Etched By RIBE RIBE刻蚀InP壁粗糙度的测量

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700540

A. Matsutani, F. Koyama, K. Iga

{"title":"Measuremeni Of Sidewall Roughness Of InP Etched By RIBE","authors":"A. Matsutani, F. Koyama, K. Iga","doi":"10.1109/LEOSST.1994.700540","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700540","url":null,"abstract":"The dry etching is going to be used as an effective microfabrication technique to form micro-optical devices such as microcavity surface emitting (SE) lasers’, ” and etched facet lasers.’-’’ In these applications, the etched surfaces should be so smooth and vertical as to avoid light scattering and maintain high reflectivity, that is sensitive to the facet roughness.” Also, the smooth etched facet is needed to reduce the etching induced damage@ at sidewalls. Many authors have reported on InP reactive ion beam etching (RIBE) with Cl, electron cyclotron resonance (ECR) p la~ma.~ .~’ In these works, the etched bottom roughness reported is, for example, less than lOOnm at high ion extraction voltage of 1450V”. So far, the quality of the etched mirror reflectivity has been estimated mainly by scanning electron microscope (SEM) observation and by measuring the external differential quantum efficiency and the threshold of etched-facet semiconductor However, the quantitative evaluation of the sidewall roughness has never been reported. In this paper, we have measured the sidewall roughness using an electron probe surface roughness analyzer for the first time. The roughness of InP sidewalls etched by MBE is discussed under different etch conditions. In this experiment, we used a high-vacuum RJBE system with an electron cyclotron resonance (ECR)-type ion source. The etching gas is pure chlorine or chlorine including 33% argon. We measured the sidewall roughness using a field emission electron probe surface roughness analyzer. The roughness resolution of this system is about lnm. Since the roughness measurement by this system can be performed by a noncontact manner, the sample is not damaged by this measurement. The samples prepared here were (100) oriented InP substrates with an electron beam resist mask which was patterned by an electron beam lithography system to suppress mask edge fluctuations. In this experiment, the etching temperature was fixed to be 140°C. Figure 1 shows the 3-D plot of the sidewall roughness and the SEM image of the sample which was etched at an ion extraction voltage of 300V and a gas (Ar : Cl,= 1 : 2 ) pressure of 4.5 X 10-4Torr. The roughness of the etched sidewall is 2.5nm in center line average and lOnm in peak to peak roughness. Figure 2 summarizes the roughness measurement of the sidewall etched under various etching conditions. Fig. 2 (a) and (b) show the roughness of the sidewall and the bottom surface of the sample shown in Fig. 1, respectively. These results indicate that the sidewall and the surface of InP substrate etched by RIBE have almost equivalent roughness. In Fig. 2, it is realized that the minimum value of the average roughness of the etched sidewall is about lnm and the value of the peak to peak roughness is 5.8 nm at an ion extraction voltage of 4OOV and a gas pressure of 1.2 X 10-3Torr (h). This etched sidewall is as smooth as the cleaved facet of an InP substrate (i). It is found that the etched sidewall ro","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124955595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design And Fabrication Of Short Wavelength Four-channel MSM-MESFET Based OEIC Receivers 基于MSM-MESFET的短波四通道OEIC接收机的设计与制造

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700429

C. Shih, J. Wang, W. Chang, D. Barlage, M. Feng

引用次数: 0

Integrated Transmitter Technology For WDM Transmission And Networking WDM传输与组网的集成发射机技术

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700515

U. Koren

引用次数: 0

A Self-routing Frequency Division Multiple Access Network 一种自路由频分多址网络

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700510

S. Tsao, Jingshown Wu, Yang-lian Lee

引用次数: 0

10 Gb/s Manolithically Integrated Pin-MEMT Receiver OEIC: Realization And Comparison Of Different Circuit Concepts 10gb /s单片集成Pin-MEMT接收器OEIC:不同电路概念的实现与比较

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700428

J.-H. Reemtoma, M. Grosakopl, F. Besca, D. Kaiser, F. Grotjahn, I. Gyúró, W. Kuebart

引用次数: 0

Hybrid Lens Implemented Usine An afocal Microlens Telescope 用聚焦微透镜望远镜实现混合透镜

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700463

F. Tooley, S. Prince, M. Taghizadeh

{"title":"Hybrid Lens Implemented Usine An afocal Microlens Telescope","authors":"F. Tooley, S. Prince, M. Taghizadeh","doi":"10.1109/LEOSST.1994.700463","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700463","url":null,"abstract":"Large arrays of smart pixels place demands on optical systems which are difficult to satisfy: low f-numbers are required since small (typically 10pm) detectors and transmitters are used to minimize capacitance and response time, large field of view is simultaneously necessary. One approach is to use microlens arrays. However, this necessitates the use of large chip areas. Hybrid lenses (figure 1) have been proposed for use with dilute arrays (low fill-factor) of smart pixels[l]. They combine the large field of view of slow, conventional lenses with the small spot size that can be achieved using fast microlenses. The pitch between the windows of the smart pixel (typically <100pm) is equal to the microlens pitch. An f75 lens was designed which images over a *So field angle and produces spots with 99% of the energy coupled into a 15pm spot. This spot is imaged by an afocal telescope composed of t73 and t7l microlens doublets. The first doublet collimates the light and the second, faster microlens doublet focuses the light into a small spot. The hybrid lens creates an array of small spots over a large field (7\" diagonal). These hybrid lenses will be used to interconnect two S-SEED arrays. S-SEEDS comprise two 5pm windows which are separated by 20pm. Imaging two spots with each microlens requires that they be used off-axis. The use of an afocal telescope allows off-axis operation whereas the microlenses-only approach does not. The doublets work at infinite conjugates.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123423426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transparent Optical Networks - The Promise And The Challenge 透明光网络——希望与挑战

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700484

A. A. Saleh

引用次数: 0

Silicon CMOS Optical Receiver Circuit With Integrated Compound Semiconductor Thin-film P-i-N Detector 集成复合半导体薄膜P-i-N探测器的硅CMOS光接收电路

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700434

M. Lee, C. Camperi-Ginestet, M. Brooke, N. Jokerst

引用次数: 11

An All-optical Ring Network With Past Tunable Sources 具有过去可调谐源的全光环形网络

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics Pub Date : 1994-07-06 DOI: 10.1109/LEOSST.1994.700518

M. Marsan, A. Fumagalli, Emilio Leonardi, F. Neri

{"title":"An All-optical Ring Network With Past Tunable Sources","authors":"M. Marsan, A. Fumagalli, Emilio Leonardi, F. Neri","doi":"10.1109/LEOSST.1994.700518","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700518","url":null,"abstract":"WDM technology and optical amplifiers have opened a new frontier for all-optical packet switched networks. However, several of the recently proposed WDM network architectures require as many wavelengths as the number of nodes attached to tlie network (see [a] for a survey). This resu1t.s in a dedicated wavelength channel for any node for either transmission or reception. These approaches might fall short when a relatively large number of nodes must be interconnected, due to c,urrently available optical technology, whic11 severely limits tlie maximum number of wavelengths in the system. We present a novel network architecture, named Daisy, that combines an N-frequency WDM approach with space diversity and time division access to interconnect up to N' nodes. 2 N fibers connect the nodes in a physical ring topology. Each node is assigned a dedicated logical cl~annel for reception operation. Daisy makes use of fast tunable transmitters and fixed receivers, and routes the light signals thoughout tlie network with passive optical components available today. Moreover, in Daisy routing is done so that a logical mesh configuration is realized over the ring physical topology. This configuration allows for a reduced maximum insertion loss encountered by packets, which in turns leads to a reduced amount of amplifier noise seen at the receiver.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125911285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1