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2007 IEEE Compound Semiconductor Integrated Circuits Symposium最新文献

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High-Speed Analog-to-Digital Converters in SiGe Technologies SiGe技术中的高速模数转换器
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.23
Jaesik Lee
{"title":"High-Speed Analog-to-Digital Converters in SiGe Technologies","authors":"Jaesik Lee","doi":"10.1109/CSICS07.2007.23","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.23","url":null,"abstract":"SiGe-based high-speed ADCs are promising for emerging higher frequency band applications such as coherent optical systems or millimeter-wave radios because of the inherent advantages of high-speed, high integration, and high yield technology. This paper addresses recent developments in high-speed ADCs in SiGe technology. An approach is then presented for development of ultra-high-speed ADCs for the next-generation wired or wireless communication systems.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116030536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
An Integrated 19-GHz Low-Phase-Noise Frequency Synthesizer in SiGe BiCMOS Technology 基于SiGe BiCMOS技术的集成19ghz低相位噪声频率合成器
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.44
S. Osmany, F. Herzel, J. Scheytt, K. Schmalz, W. Winkler
{"title":"An Integrated 19-GHz Low-Phase-Noise Frequency Synthesizer in SiGe BiCMOS Technology","authors":"S. Osmany, F. Herzel, J. Scheytt, K. Schmalz, W. Winkler","doi":"10.1109/CSICS07.2007.44","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.44","url":null,"abstract":"We present a fully integrated phase-locked loop tunable from 17.5 GHz to 19.2 GHz fabricated in a 0.25 mum SiGe BiCMOS technology. The measured phase noise is below -110 dBc/Hz at 1 MHz offset over the whole tuning range. Based on an integer-N architecture, the synthesizer consumes 248 mW and occupies a chip area of 2.1 mm including pads. Quadrature outputs at quarter of the oscillator frequency are produced, which are required in a sliding-IF 24 GHz transceiver. Possible applications include wireless LAN as well as satellite communication. The measured phase noise is the lowest among previously published Si-based integrated synthesizers above 12 GHz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117239527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A Low-Power CMOS VCO for 2.4GHz WLAN 一种用于2.4GHz WLAN的低功耗CMOS压控振荡器
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.42
H. Choi, Q. Bui, C. Park
{"title":"A Low-Power CMOS VCO for 2.4GHz WLAN","authors":"H. Choi, Q. Bui, C. Park","doi":"10.1109/CSICS07.2007.42","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.42","url":null,"abstract":"In this paper, a 2.4-GHz low-power LC VCO with high performance in phase noise is designed and implemented in 0.18um CMOS process for IEEE 802. llg WLAN. Based on measurement results, it has the phase noise of -121.11dBc/Hz @lMHz offset from a 2.4GHz carrier. The total power dissipation is only 0.675 mW at 1.2-V power supply voltage. The oscillator is tuned from 2.28 GHz to 2.47 GHz while a tuning voltage varies from 0 V to 1.8 V. Within the author's knowledge, this VCO has the lowest phase noise among the VCOs which consume less-than-1 mW power.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131177384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Statistical Large-Signal Model Enabling Yield Optimization in High-Power Amplifier Design 统计大信号模型实现高功率放大器设计的良率优化
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.25
W. Stiebler, Pavlos Kolias, J. Sanctuary
{"title":"Statistical Large-Signal Model Enabling Yield Optimization in High-Power Amplifier Design","authors":"W. Stiebler, Pavlos Kolias, J. Sanctuary","doi":"10.1109/CSICS07.2007.25","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.25","url":null,"abstract":"A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114487427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz 一种增益为16db的340ghz S-MMIC LNA演示
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.19
W. Deal, X. Mei, V. Radisic, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai
{"title":"Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz","authors":"W. Deal, X. Mei, V. Radisic, W. Yoshida, P. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, R. Lai","doi":"10.1109/CSICS07.2007.19","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.19","url":null,"abstract":"In this paper, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time. The three stage amplifier uses advanced InP HEMT transistors to realize 16-dB gain at 340-GHz and > 20 dB gain at 280-GHz. The amplifier demonstrates > 100 GHz of bandwidth with gain > 10 dB. This paper demonstrates that full WR-3 waveguide band (220-325 GHz) InP HEMT amplifiers are currently possible and that current device capabilities enable operation well into the sub-millimeter wave regime.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125979636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
A 1.2V 15.6mW 81GHz 2:1 Static CML Frequency Divider with a Band-Pass Load in a 90nm SOI CMOS Technology 基于90nm SOI CMOS技术的1.2V 15.6mW 81GHz 2:1静态CML分频器带通负载
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.28
J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski
{"title":"A 1.2V 15.6mW 81GHz 2:1 Static CML Frequency Divider with a Band-Pass Load in a 90nm SOI CMOS Technology","authors":"J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski","doi":"10.1109/CSICS07.2007.28","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.28","url":null,"abstract":"A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a maximum operating frequency of 75.6 GHz with a core power of 2.75 mW.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122344381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Nanoscale CMOS for mm-Wave Applications 毫米波应用的纳米级CMOS
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.37
A. Niknejad, S. Emami, B. Heydari, M. Bohsali, E. Adabi
{"title":"Nanoscale CMOS for mm-Wave Applications","authors":"A. Niknejad, S. Emami, B. Heydari, M. Bohsali, E. Adabi","doi":"10.1109/CSICS07.2007.37","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.37","url":null,"abstract":"Aggressive technology scaling of CMOS has culminated in a low-cost high volume commercial process technology with Ft > 150 GHz and Fmax > 200 GHz. This paper discusses the key trends in CMOS scaling that have led to this level of performance and attempts to predict the performance down to 45 nm. The design of active and passive components in CMOS for power gain and low noise are discussed in detail and unique features of CMOS technology are highlighted. Experimental results derived from a 60 GHz amplifier in 90 nm CMOS and a complete 60 GHz front-end receiver in 130 nm CMOS are reported.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132520245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes 非极性和半极性氮化镓基发光二极管和激光二极管的最新性能
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.47
D. Feezell, S. Denbaars, J. Speck, S. Nakamura
{"title":"Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes","authors":"D. Feezell, S. Denbaars, J. Speck, S. Nakamura","doi":"10.1109/CSICS07.2007.47","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.47","url":null,"abstract":"This article discusses recent advances of nonpolar and semipolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs). Devices fabricated on these alternative orientations are already beginning to realize significant performance milestones. Nonpolar GaN has been employed to facilitate high-power LEDs and to realize CW operation of novel AlGaN-cladding-free LD structures. Semipolar GaN has also been successfully used to demonstrate LDs and to realize high-power, high-efficiency green LEDs.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133297927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si 大功率高压AlGaN/GaN HEMTs-on-Si
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.11
Chris Park, A. Edwards, P. Rajagopal, W. Johnson, S. Singhal, A. Hanson, Quinn Martin, E. Piner, K. Linthicum, I. Kizilyalli
{"title":"High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si","authors":"Chris Park, A. Edwards, P. Rajagopal, W. Johnson, S. Singhal, A. Hanson, Quinn Martin, E. Piner, K. Linthicum, I. Kizilyalli","doi":"10.1109/CSICS07.2007.11","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.11","url":null,"abstract":"GaN-on-Silicon technology is a highly manufacturable, reliable, and cost effective AlGaN/GaN HEMT platform. Maximum RF performance (power and efficiency) can be achieved by addressing two main areas related to the silicon substrate: the RF loss to the silicon substrate and the thermal resistance of the device to the heat sink. In this paper, we will report on how the two areas can be addressed in a realistic environment to enable high power, high voltage operation. This device technology can be used to develop high power amplifiers that are significantly smaller, lighter, and operate over a broad bandwidth.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133907216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
100-200 GHz CMOS Signal Sources and Detectors 100-200 GHz CMOS信号源和检测器
2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI: 10.1109/CSICS07.2007.61
K. O, C. Cao, E. Seok, S. Sankaran
{"title":"100-200 GHz CMOS Signal Sources and Detectors","authors":"K. O, C. Cao, E. Seok, S. Sankaran","doi":"10.1109/CSICS07.2007.61","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.61","url":null,"abstract":"The feasibility of CMOS circuits operating at frequencies near 200 GHz has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 192-GHz push-push VCO in 130-nm CMOS, and a 180-GHz detector circuit in 130nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible in the near future. Index Terms – CMOS, mm-wave, oscillator, Schottky diode, detector, phase locked loop, terahertz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115262887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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