The Future of Compound Semiconductors

2007 IEEE Compound Semiconductor Integrated Circuits Symposium Pub Date : 2007-11-19 DOI:10.1109/CSICS07.2007.59

R. Quinsey

{"title":"The Future of Compound Semiconductors","authors":"R. Quinsey","doi":"10.1109/CSICS07.2007.59","DOIUrl":null,"url":null,"abstract":"The compound semiconductor industry, which showed great promise in the 90's, struggled with the disappointment of over supply and commoditization in the \"post bubble\" period and lost share to improving performance of silicon solutions. Our industry is now re-emerging as a critical technology for achieving the promise of ubiquitous wireless connectivity. While MESFET technology dominated industry volume ten years ago, it now plays an inferior role to HBT and pHEMT. New technologies, such as E/D pHEMT and BiHEMT, are emerging as the future workhorses. These technologies provide greater functionality and performance than their predecessors. At the same time, GaN technology for RF applications has moved from experimental to early commercialization. As our industry matures we are seeing changes in how compound semiconductors are taken to market. High performance packaging is making inroads where MMIC die have been the historical choice. Low-cost modules have become the preferred solution for high volume RF applications. The overall availability of compound semiconductors is consolidating as the supply and demand ratio comes back into balance. It is an exciting time for compound semiconductor development.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.59","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

The compound semiconductor industry, which showed great promise in the 90's, struggled with the disappointment of over supply and commoditization in the "post bubble" period and lost share to improving performance of silicon solutions. Our industry is now re-emerging as a critical technology for achieving the promise of ubiquitous wireless connectivity. While MESFET technology dominated industry volume ten years ago, it now plays an inferior role to HBT and pHEMT. New technologies, such as E/D pHEMT and BiHEMT, are emerging as the future workhorses. These technologies provide greater functionality and performance than their predecessors. At the same time, GaN technology for RF applications has moved from experimental to early commercialization. As our industry matures we are seeing changes in how compound semiconductors are taken to market. High performance packaging is making inroads where MMIC die have been the historical choice. Low-cost modules have become the preferred solution for high volume RF applications. The overall availability of compound semiconductors is consolidating as the supply and demand ratio comes back into balance. It is an exciting time for compound semiconductor development.

查看原文本刊更多论文

化合物半导体的未来

化合物半导体行业，在90年代显示出巨大的希望，在“后泡沫”时期挣扎于供应过剩和商品化的失望之中，并在改进硅解决方案的性能方面失去了份额。我们的行业现在正重新成为实现无处不在的无线连接承诺的关键技术。虽然MESFET技术在十年前主导了工业产量，但现在它的作用不如HBT和pHEMT。E/D pHEMT和BiHEMT等新技术正在成为未来的主力。这些技术提供了比它们的前辈更好的功能和性能。与此同时，用于射频应用的氮化镓技术已经从实验阶段转向早期商业化阶段。随着我们行业的成熟，我们看到了化合物半导体如何进入市场的变化。高性能封装正在进入MMIC芯片一直是历史选择的领域。低成本模块已成为大批量射频应用的首选解决方案。随着供需比例恢复平衡，化合物半导体的整体可用性正在巩固。这是化合物半导体发展的一个激动人心的时刻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2007 IEEE Compound Semiconductor Integrated Circuits Symposium

自引率

0.00%

发文量