Recent Advances in GaN-on-SiC HEMT Reliability and Microwave Performance within the DARPA WBGS-RF Program

Abstract

The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.