J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski
{"title":"A 1.2V 15.6mW 81GHz 2:1 Static CML Frequency Divider with a Band-Pass Load in a 90nm SOI CMOS Technology","authors":"J. Plouchart, Daiek Kim, Jonghae Kim, V. Karam, C. Plett, Choongyeun Cho, R. Trzcinski","doi":"10.1109/CSICS07.2007.28","DOIUrl":null,"url":null,"abstract":"A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a maximum operating frequency of 75.6 GHz with a core power of 2.75 mW.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.28","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a maximum operating frequency of 75.6 GHz with a core power of 2.75 mW.