Rohit Vaidya, Deepak Gupta, Manish Bhakuni, Rupert Prince
{"title":"用于WLAN 802.11b/g应用的微型低电流全集成前端模块","authors":"Rohit Vaidya, Deepak Gupta, Manish Bhakuni, Rupert Prince","doi":"10.1109/CSICS07.2007.51","DOIUrl":null,"url":null,"abstract":"In the fast evolving wireless communication market, the need to have a fully integrated RF front end module (FEM) is highly felt where in all the blocks of FEM are on a single chip. For the vendors the reduced firm factor and availability of a complete integrated solution enables rapid market entry and the freedom to focus on value added branding. RF arrays has developed a single chip 802.11b/g FEM in 2.4-2.5-GHz frequency range, which consists of a integrated PA, LNA and SPDT switch with on-chip bias circuits and power detector delivering linear power of 16 dam at 4% EVM for 802.11g having OFDM 54 Mbps data rate and 20 dBm at 1.2% EVM for 802.11b having CCK 11 Mbps data rate. The transmit chain have 28 dB of gain and 23.5 dBm of PI dB. The receive chain have 2.2 dB of noise figure, 14 dBm of P1 dB and 15 dB of gain The quiescent current of PA is 56 mA in TX path while LNA is 8 mA in receive path and packaged in 3 times 3 times 0.7 mm3 16 pin QFN.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A Miniature Low Current Fully Integrated Front End Module for WLAN 802.11b/g Applications\",\"authors\":\"Rohit Vaidya, Deepak Gupta, Manish Bhakuni, Rupert Prince\",\"doi\":\"10.1109/CSICS07.2007.51\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the fast evolving wireless communication market, the need to have a fully integrated RF front end module (FEM) is highly felt where in all the blocks of FEM are on a single chip. For the vendors the reduced firm factor and availability of a complete integrated solution enables rapid market entry and the freedom to focus on value added branding. RF arrays has developed a single chip 802.11b/g FEM in 2.4-2.5-GHz frequency range, which consists of a integrated PA, LNA and SPDT switch with on-chip bias circuits and power detector delivering linear power of 16 dam at 4% EVM for 802.11g having OFDM 54 Mbps data rate and 20 dBm at 1.2% EVM for 802.11b having CCK 11 Mbps data rate. The transmit chain have 28 dB of gain and 23.5 dBm of PI dB. The receive chain have 2.2 dB of noise figure, 14 dBm of P1 dB and 15 dB of gain The quiescent current of PA is 56 mA in TX path while LNA is 8 mA in receive path and packaged in 3 times 3 times 0.7 mm3 16 pin QFN.\",\"PeriodicalId\":370697,\"journal\":{\"name\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS07.2007.51\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.51","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Miniature Low Current Fully Integrated Front End Module for WLAN 802.11b/g Applications
In the fast evolving wireless communication market, the need to have a fully integrated RF front end module (FEM) is highly felt where in all the blocks of FEM are on a single chip. For the vendors the reduced firm factor and availability of a complete integrated solution enables rapid market entry and the freedom to focus on value added branding. RF arrays has developed a single chip 802.11b/g FEM in 2.4-2.5-GHz frequency range, which consists of a integrated PA, LNA and SPDT switch with on-chip bias circuits and power detector delivering linear power of 16 dam at 4% EVM for 802.11g having OFDM 54 Mbps data rate and 20 dBm at 1.2% EVM for 802.11b having CCK 11 Mbps data rate. The transmit chain have 28 dB of gain and 23.5 dBm of PI dB. The receive chain have 2.2 dB of noise figure, 14 dBm of P1 dB and 15 dB of gain The quiescent current of PA is 56 mA in TX path while LNA is 8 mA in receive path and packaged in 3 times 3 times 0.7 mm3 16 pin QFN.