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2006 International Electron Devices Meeting最新文献

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Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation 利用亚- 10nm以上的铁电介质的高密度探针存储器
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346985
D. Yoo, C.M. Lee, B. Bae, L.S. Kim, J. Heo, D. Im, S. Choi, S.O. Park, H. Kim, U. Chung, J. Moon, B. Ryu, D. Kim, T. Noh
{"title":"Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation","authors":"D. Yoo, C.M. Lee, B. Bae, L.S. Kim, J. Heo, D. Im, S. Choi, S.O. Park, H. Kim, U. Chung, J. Moon, B. Ryu, D. Kim, T. Noh","doi":"10.1109/IEDM.2006.346985","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346985","url":null,"abstract":"Feasibility of high density probe-based memory with polycrystalline ferroelectric media has been demonstrated for next memory applications beyond sub-10 nm generation. Noble chemical-mechanical-polishing (CMP) method was employed to fabricate a very even surface on polycrystalline MOCVD Pb(Zr,Ti)O3 (PZT) media. On the CMP processed PZT media, domain dot array was able to be written and read even at grain boundary region by PFM technique. Moreover, 15 nm-sized domain dot was successfully demonstrated on 50 nm-thick PZT media. Also for the first time, we successfully demonstrated that the polycrystalline ultra thin 7 nm-thick PZT media has good ferroelectric properties","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128482177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-Q Micromachined Silver Passives and Filters 高q微机械银无源和滤波器
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346889
M. Rais-Zadeh, P. Kohl, F. Ayazi
{"title":"High-Q Micromachined Silver Passives and Filters","authors":"M. Rais-Zadeh, P. Kohl, F. Ayazi","doi":"10.1109/IEDM.2006.346889","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346889","url":null,"abstract":"This paper presents high aspect-ratio silver (Ag) micromachining for implementation of very high quality factor (Q) tunable, and fixed passives, and low insertion loss bandpass LC filters. A combination of low-loss substrate and highest conductivity metal is used to achieve record high Q and low insertion loss (IL) at radio frequencies","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129653829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Ni-based FUSI gates: CMOS Integration for 45nm node and beyond 镍基FUSI栅极:45纳米及以上节点的CMOS集成
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346759
T. Hoffmann, A. Veloso, A. Lauwers, H. Yu, H. Tigelaar, M. V. van Dal, T. Chiarella, C. Kerner, T. Kauerauf, A. Shickova, R. Mitsuhashi, I. Satoru, M. Niwa, A. Rothschild, B. Froment, J. Ramos, A. Nackaerts, M. Rosmeulen, S. Brus, C. Vrancken, P. Absil, M. Jurczak, S. Biesemans, J. Kittl
{"title":"Ni-based FUSI gates: CMOS Integration for 45nm node and beyond","authors":"T. Hoffmann, A. Veloso, A. Lauwers, H. Yu, H. Tigelaar, M. V. van Dal, T. Chiarella, C. Kerner, T. Kauerauf, A. Shickova, R. Mitsuhashi, I. Satoru, M. Niwa, A. Rothschild, B. Froment, J. Ramos, A. Nackaerts, M. Rosmeulen, S. Brus, C. Vrancken, P. Absil, M. Jurczak, S. Biesemans, J. Kittl","doi":"10.1109/IEDM.2006.346759","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346759","url":null,"abstract":"This work reports the first comprehensive evaluation of FUSI gates for manufacturability, covering the key aspects of integration, process control, reliability, matching, device design and circuit-level benefit. Thanks to a selective and controlled poly etch-back process, dual work-function Ni-based FUSI CMOS circuits with record ring oscillator performance (high-VT applications) have been achieved (17ps at VDD=1.1V and 20pA/mum Ioff), meeting the ITRS 45nm node requirement for low power CMOS","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127284260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs 掺杂分离肖特基mosfet中注入速度增强的综合研究
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346963
A. Kinoshita, T. Kinoshita, Y. Nishi, K. Uchida, S. Toriyama, R. Hasumi, J. Koga
{"title":"Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs","authors":"A. Kinoshita, T. Kinoshita, Y. Nishi, K. Uchida, S. Toriyama, R. Hasumi, J. Koga","doi":"10.1109/IEDM.2006.346963","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346963","url":null,"abstract":"The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127073047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies 场效应二极管(FED):深亚微米SOI技术中的一种新型ESD保护器件
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346971
A. Salman, S. Beebe, M. Emam, M. Pelella, D. Ioannou
{"title":"Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies","authors":"A. Salman, S. Beebe, M. Emam, M. Pelella, D. Ioannou","doi":"10.1109/IEDM.2006.346971","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346971","url":null,"abstract":"In this paper the authors present the field effect diode (FED) as a novel device with a new approach for ESD protection in SOI. Device parameters are identified and optimized to achieve optimum ON and OFF behavior. Furthermore, the authors present two ways the FED can be used in an ESD protection scheme: in I/O clamping and in a high-voltage supply clamp","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"92 41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128908819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 68
RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs 单片RF lsi的低电压操作RF CMOS-MEMS开关
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346891
K. Kuwabara, N. Sato, T. Shimamura, H. Morimura, J. Kodate, T. Sakata, S. Shigematsu, K. Kudou, K. Machida, M. Nakanishi, H. Ishii
{"title":"RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs","authors":"K. Kuwabara, N. Sato, T. Shimamura, H. Morimura, J. Kodate, T. Sakata, S. Shigematsu, K. Kudou, K. Machida, M. Nakanishi, H. Ishii","doi":"10.1109/IEDM.2006.346891","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346891","url":null,"abstract":"This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for more than 1 billion cycles","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125668016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Thermoelectric Energy Conversion in Nanostructures 纳米结构中的热电能量转换
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346837
Gang Chen, C. Dames, A. Henry
{"title":"Thermoelectric Energy Conversion in Nanostructures","authors":"Gang Chen, C. Dames, A. Henry","doi":"10.1109/IEDM.2006.346837","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346837","url":null,"abstract":"Thermoelectric effects enable direct energy conversion between heat and electricity. Various size effects can be explored to increase the thermoelectric performance of nanostructures compared to bulk. Boundary scattering reduces the phonon thermal conductivity, and quantum confinement and interface energy filtering can improve the electronic power factor. Theoretical and experimental results are described for thin films, nanowires, and nanocomposites","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121308209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs 高频基高k介电材料作为电荷阱nvm存储层的深入研究
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.347010
J. Buckley, M. Bocquet, G. Molas, M. Gely, P. Brianceau, N. Rochat, E. Martinez, F. Martin, H. Grampeix, J. Colonna, A. Toffoli, V. Vidal, C. Leroux, G. Ghibaudo, G. Pananakakis, C. Bongiorno, D. Corso, S. Lombardo, B. Desalvo, S. Deleonibus
{"title":"In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs","authors":"J. Buckley, M. Bocquet, G. Molas, M. Gely, P. Brianceau, N. Rochat, E. Martinez, F. Martin, H. Grampeix, J. Colonna, A. Toffoli, V. Vidal, C. Leroux, G. Ghibaudo, G. Pananakakis, C. Bongiorno, D. Corso, S. Lombardo, B. Desalvo, S. Deleonibus","doi":"10.1109/IEDM.2006.347010","DOIUrl":"https://doi.org/10.1109/IEDM.2006.347010","url":null,"abstract":"In this paper, different Hf-based oxides (HfO2, HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the storage layer and the memory performances. The obtained results clearly demonstrate the high interest of HfO2 dielectric as possible storage layer of future NROM-like memory devices","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115804085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
The analog challenge of nanometer CMOS 纳米CMOS的模拟挑战
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346834
Maarten Vertregt
{"title":"The analog challenge of nanometer CMOS","authors":"Maarten Vertregt","doi":"10.1109/IEDM.2006.346834","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346834","url":null,"abstract":"Nanometer CMOS technology offers the required integration density for advanced products such as home theatre equipment and personal communication devices. The system solutions inside these products demand highly integrated systems-on-silicon, blending high-density digital functions with analog interface circuits. These integrated solutions have to cope with high data-rates, and thus require high speed and high dynamic range circuits, without compromising power consumption. Novel choices on circuit and system level are required to handle the increased number of devices subject to high variability, running at higher intrinsic speeds with a constraint power supply","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125124054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory 局部存储、多级SONOS闪存中随机电报噪声引起的读电流不稳定
2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI: 10.1109/IEDM.2006.346820
S. Gu, C.W. Li, Tahui Wang, W.P. Lu, K.C. Chen, J. Ku, Chih-Yuan Lu
{"title":"Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory","authors":"S. Gu, C.W. Li, Tahui Wang, W.P. Lu, K.C. Chen, J. Ku, Chih-Yuan Lu","doi":"10.1109/IEDM.2006.346820","DOIUrl":"https://doi.org/10.1109/IEDM.2006.346820","url":null,"abstract":"Program/erase cycling stress induced read current fluctuations arising from random telegraph noise (RTN) in a localized storage, multi-level nitride flash memory (SONOS) is explored. Our study shows that localized charge storage significantly enhances RTN. The amplitude of RTN varies in different program levels of a multi-level cell. The broadening of read current distribution due to RTN is characterized and modeled. Improvement of bottom oxide robustness can reduce the read current fluctuations","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133588808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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