RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs

K. Kuwabara, N. Sato, T. Shimamura, H. Morimura, J. Kodate, T. Sakata, S. Shigematsu, K. Kudou, K. Machida, M. Nakanishi, H. Ishii
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引用次数: 23

Abstract

This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for more than 1 billion cycles
单片RF lsi的低电压操作RF CMOS-MEMS开关
本文介绍了一种集成了射频MEMS开关和CMOS控制电路的新型射频CMOS-MEMS开关。制作了单极8通射频CMOS-MEMS开关,实现了开关在3.3 V电源电压下的工作。该开关在晶圆级用薄膜封装,以防止在封装过程中损坏。实验结果证实,该开关具有超过10亿次循环的机械可靠性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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