场效应二极管(FED):深亚微米SOI技术中的一种新型ESD保护器件

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346971

A. Salman, S. Beebe, M. Emam, M. Pelella, D. Ioannou

{"title":"场效应二极管(FED):深亚微米SOI技术中的一种新型ESD保护器件","authors":"A. Salman, S. Beebe, M. Emam, M. Pelella, D. Ioannou","doi":"10.1109/IEDM.2006.346971","DOIUrl":null,"url":null,"abstract":"In this paper the authors present the field effect diode (FED) as a novel device with a new approach for ESD protection in SOI. Device parameters are identified and optimized to achieve optimum ON and OFF behavior. Furthermore, the authors present two ways the FED can be used in an ESD protection scheme: in I/O clamping and in a high-voltage supply clamp","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"92 41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"68","resultStr":"{\"title\":\"Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies\",\"authors\":\"A. Salman, S. Beebe, M. Emam, M. Pelella, D. Ioannou\",\"doi\":\"10.1109/IEDM.2006.346971\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the authors present the field effect diode (FED) as a novel device with a new approach for ESD protection in SOI. Device parameters are identified and optimized to achieve optimum ON and OFF behavior. Furthermore, the authors present two ways the FED can be used in an ESD protection scheme: in I/O clamping and in a high-voltage supply clamp\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"92 41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"68\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346971\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 68

摘要

本文提出了场效应二极管(FED)作为一种新型器件，为SOI中的ESD保护提供了新的途径。器件参数被识别和优化，以实现最佳的ON和OFF行为。此外，作者提出了两种方法，FED可用于ESD保护方案:在I/O钳位和高压电源钳位

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Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies

In this paper the authors present the field effect diode (FED) as a novel device with a new approach for ESD protection in SOI. Device parameters are identified and optimized to achieve optimum ON and OFF behavior. Furthermore, the authors present two ways the FED can be used in an ESD protection scheme: in I/O clamping and in a high-voltage supply clamp

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2006 International Electron Devices Meeting

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